• 전기전자학회논문지
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• 제25권4호
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• pp.735-740
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• 2021

본 논문에서는 기존의 LTDDSCR의 구조를 개선하여 기생 NPN BJT의 낮은 전류이득으로 높은 홀딩전압을 갖는 새로운 ESD 보호 소자를 제안한다. 제안된 보호 소자는 Synopsys사의 TCAD simulation을 이용하여 HBM simulation으로 전기적 특성을 분석하였고 current flow와 impact ionization 및 recombination Simulation으로 추가된 BJT가 동작하는 것을 확인하였다. 또한, 설계변수 D1, D2로 홀딩전압 특성을 최적화하였다. Simulation 수행결과, 새로운 ESD 보호 소자는 기존의 LTDDSCR과 비교하여 높은 홀딩전압을 갖는 것이 검증되었고 대칭적인 양방향 특성을 갖는 것이 확인되었다. 따라서 제안된 ESD 보호 소자는 IC에 적용될시 높은 면적 효율성을 가지며 IC의 신뢰성을 향상시킬 것으로 기대된다.

• 한국군사과학기술학회지
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• 제14권6호
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• pp.1166-1170
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• 2011

For developing the ignition device for the interceptor of Korean active protection system, the design parameters of the ignition device which should have a short ignition delay time and sufficient energy for propellant ignition were studied. The electric primer instead of mechanical primer was adopted for deceasing delay time, and ignition code was used for decreasing the time difference of flame propagation from the flame holes. The developed ignition device showed the ignition delay time of a few ms. When the designed ignition device was applied to the open-type propulsion devices, the stable interior ballistic characteristic was showed in a firing test.

• 한국위성정보통신학회논문지
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• 제8권1호
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• pp.45-53
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• 2013

기존의 NEDSCR 소자는 매우 낮은 스냅백 홀딩전압과 낮은 온-저항을 가져 정상적인 동작 동안 래치업을 초래하므로 ESD 보호소자로 사용하는데 어려움이 있었다. 본 연구에서는 NEDSCR 소자의 시뮬레이션 및 TLP 테스트를 통해 이러한 단점들을 극복할 수 있는 새로운 방법을 제안하였다. 매우 우수한 ESD 보호 성능과 높은 래치업 면역 특성을 구현하기 위해 N+ 소오스 확산영역을 둘러싸는 P형의 CPS 이온주입공정을 추가함으로써 NEDSCR 소자의 스냅백 홀딩전압과 온 저항을 증가시켜 정전기 보호 성능을 개선시킬 수 있는 것으로 입증되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 심포지엄 논문집 정보 및 제어부문
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• pp.90-92
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• 2005

In this paper, we design a digital protection IED(Intelligent Electric Device) for a distributed power system in connection with power grid. The device can measure various elements for protection and communicate with another devices through network. The protection IED is composed of specific function modules: signal process module which converts analog signal from PT and CT handle algorithm to digital one; communication module for connection with another IEDs; input/output module for user-interfaces; main control module for control the whole modules. A general purpose DSP board with TMS320C2812 is used in the IED. Experiments with the power system simulator DOBLE have been made to verily the proposed hardware system.

• Journal of Advanced Marine Engineering and Technology
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• 제23권2호
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• pp.159-167
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• 1999

This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.

• 조명전기설비학회논문지
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• 제25권10호
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• pp.102-108
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• 2011

The existing power flow has a single direction to the line end but the bidirectional power flow will possibly occur depending on the output capacity in the 22.9[kV] distribution power system connected with the dispersed generation(DG). So these characteristics would influence the power system management. The DG have many advantages such as assistance source, Load share etc. So the utility must apply the bidirectional protection system so as to maximize an advantage of DG. This paper describes the field test case of bidirectional protective device in order to investigate the device performance when applied to bidirectional power system. We have tested in the power system test site of KEPCO and these tests provide the basis for performance verification test of bidirectional protective device in the power system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전력기술부문
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• pp.53-58
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• 2002

Sheath circulating current is increased as the change of sheath mutual impedance which is caused by imbalance of cable system, and different section length between joint box. If excessive current flows in sheath. sheath loss will be increased and then transmission capacity of underground transmission system is reduced. Accordingly, This paper proposed sheath current reduction device using resistor and reactor and proved the reduction effect of that device using EMTP/ATP. And also in this paper, when transients are occurred at the underground system with reduction device by ground fault and lightning surge. we analyzes transient effect of system variously. From this result. authors establish the protection methods of sheath circulating current reduction device.

• 전기전자학회논문지
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• 제11권1호통권20호
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• pp.54-60
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• 2007

본 연구에서는 고속 I/0 인터페이스용 ESD(Electro-Static Discharge)보호소자로서 SCR(Silicon Controlled Rectifier)구조에 기반한 새로운 구조의 ESD보호소자인 N/P-type Low Voltage Triggered Silicon-Controlled Rectifier(NPLVTSCR)을 제안하였다. 제안된 NPLVTSCR은 기존 SCR이 갖는 높은 트리거 전압($\sim$20V)을 낮추고 ($\sim$5V) 또한 정상상태에서의 보호소자의 래치업 현상을 줄일 수 있다. 본 연구에서 제안된 NPLVTSCR의 전기적 특성 및 ESB감내특성을 확인하기 위하여 TCAD툴을 이용하여 시뮬레이션을 수행하였으며, 또한 TSMC 90nm공정에서 테스트 패턴을 제작하여 측정을 수행하였다. 시뮬레이션 및 측정 결과를 통해, NPLVTSCR은 PMOS 게이트 길이에 따라 3.2V $\sim$ 7.5V의 트리거링 전압과 2.3V $\sim$ 3.2V의 홀딩전압을 갖으며, 약 2kV의 HBM ESD 감내특성을 갖는 것을 확인 할 수 있었다.

• 한국위성정보통신학회논문지
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• 제7권2호
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• pp.18-24
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• 2012

본 논문에서는 ESD 방지를 위한 최적 방법론에 목표하여 확장된 드레인을 갖는 EDNMOS 소자의 더블 스냅백 현상 및 백그라운 도핑 농도 (BDC)의 영향을 조사하였다. 고전류 영역에서 낮은 BDC를 가진 EDNMOS 소자는 강한 스냅백으로 인해 취약한 ESD 성능과 높은 래치업 위험을 가지게 되나, 높은 BDC를 가진 EDNMOS 소자는 스냅백을 효과적으로 방지할 수 있음을 알 수 있었다. 따라서 BDC 제어로 안정적인 ESD 방지 성능과 래치업 면역을 구현할 수 있음을 밝혔다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2012년도 전력전자학술대회 논문집
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• pp.621-622
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• 2012

The thermal over-current relay or electronic motor protection relay is mostly used as the open-phase detection device of the three-phase motor or load. When the over-current or overheat of electric line is generated, it detects and operates circuit breaker, but there is the defect that the sensing speed is slow, the operation can be sometimes failed, and the precision is decreased. In order to improve these problems, this paper is proposed a new control circuit topology for open-phase protection using semiconductor devices. Therefore, the proposed open-phase protection device enhances the sensing speed and precision, and has the advantage of simple fitting in the three-phase motor control panel in the field, as it manufactures into small size and light weight.