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Improvements of Extended Drain NMOS (EDNMOS) Device for Electrostatic Discharge (ESD) Protection of High Voltage Operating LDI Chip  

Yang, Jun-Won (세한대학교 컴퓨터교육과)
Seo, Yong-Jin (세한대학교 나노정보소재연구소)
Publication Information
Journal of Satellite, Information and Communications / v.7, no.2, 2012 , pp. 18-24 More about this Journal
Abstract
High current behaviors of the extended drain n-type metal-oxide-semiconductor field effects transistor (EDNMOSFET) for electrostatic discharge (ESD) protection of high voltage operating LDI (LCD Driver IC) chip are analyzed. Both the transmission line pulse (TLP) data and the thermal incorporated 2-dimensional simulation analysis demonstrate a characteristic double snapback phenomenon after triggering of biploar junction transistor (BJT) operation. Also, background doping concentration (BDC) is proven to be a critical factor to affect the high current behavior of the EDNMOS devices. The EDNMOS device with low BDC suffers from strong snapback in the high current region, which results in poor ESD protection performance and high latchup risk. However, the strong snapback can be avoided in the EDNMOS device with high BDC. This implies that both the good ESD protection performance and the latchup immunity can be realized in terms of the EDNMOS by properly controlling its BDC.
Keywords
Electrostatic discharge (ESD); Extended drain N-type MOSFET (EDNMOS); Background doping concentration(BDC); Transmission line pulse (TLP); Double snapback; Latchup;
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