• The Korean Journal of Ceramics
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• 제4권3호
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• 대한수학회논문집
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• 제29권4호
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• pp.569-579
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• 2014

We consider a condition under which the projectivization $P(E^k)$ of a complex k-bundle $E^k{\rightarrow}M$ over an even-dimensional manifold M can have the hard Lefschetz property, affected by [10]. It depends strongly on the rank k of the bundle $E^k$. Our approach is purely algebraic by using rational Sullivan minimal models [5]. We will give some examples.

• 한국수학교육학회지시리즈B:순수및응용수학
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• 제10권4호
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• pp.199-206
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• 2003

Let N be a right near-ring. N is said to be strongly reduced if, for $a\inN$, $a^2 \in N_{c}$ implies $a\;\in\;N_{c}$, or equivalently, for $a\inN$ and any positive integer n, $a^{n} \in N_{c}$ implies $a\;\in\;N_{c}$, where $N_{c}$ denotes the constant part of N. We will show that strong reducedness is equivalent to condition (ⅱ) of Reddy and Murty's property $(^{\ast})$ (cf. [Reddy & Murty: On strongly regular near-rings. Proc. Edinburgh Math. Soc. (2) 27 (1984), no. 1, 61-64]), and that condition (ⅰ) of Reddy and Murty's property $(^{\ast})$ follows from strong reducedness. Also, we will investigate some characterizations of strongly reduced near-rings and their properties. Using strong reducedness, we characterize left strongly regular near-rings and ($P_{0}$)-near-rings.

• 한국초전도ㆍ저온공학회논문지
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• 제22권2호
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• pp.21-25
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• 2020

We investigated the flux pinning property of GdBa₂Cu₃O_7-x (GdBCO) films on top of La_0.7Sr_0.3MnO₃ (LSMO) nanoparticles deposited by a surface decoration. Both GdBCO films and LSMO nano particles were deposited by pulsed laser deposition and the number of laser pulses were varied from 80 to 320 in order to control the density of the LSMO nanoparticles. The magnetization data at 77 K showed that the critical current density (J_c) was enhanced in all of the GdBCO films with LSMO nanoparticles and that the J_c enhancement was found to be inversely proportional to the LSMO nanoparticle density. Structural analyses revealed that LSMO nanoparticles induce a compressive strain in the GdBCO films resulting in a disordering in the CuO₂ plane. Therefore, the enhanced flux pinning property in the GdBCO with LSMO nanoparticles was attributed to the competing effect between the increase of pinning centers and the increase of compressive strain in the superconducting phase.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 D
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• pp.781-783
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• 2000

1bit full adder have 3 input (including carry_in) and 2 outputs(Sum and Carry_out). Because of 1 bit full adder's propagation delay. We usually use 4-bit binary full adder with fast carry, 74LS283. The 74LS283 is positive logic circuit chip. But the logic function of binary adder is symmetrical, so it can be possible to use it not only positive logic but also the negative logic. This thesis use symmetrical property. such as $C_{i+1}(\bar{a_i}\bar{b_i}\bar{c_i})=C_{i+1}{\bar}(a_i,\;b_i,\;c_i)$ and $S_i(\bar{a_i}\bar{b_i}\bar{c_i})=\bar{S_i}(a_i,\;b_i,\;c_i)$. And prove this property with logic operation. Using these property, the 74LS283 adder is possile as the negation logic circuit. It's very useful to use the chip in negative logic. because many system chip is negative logic circuit. for example when we have negative logic chip with 74LS283. we don't need any not gate for 74LS283 input, and just use output of adder(74LS283) as the negation of original output.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2007년도 High Temperature Superconductivity Vol.XVII
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• pp.43-43
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제26회 학술발표회 초록집
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• pp.104-104
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• 2004

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1988-1990
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• 2004

In this paper, we investigated electrical property of epoxy resin which includes elastomers to improve electrical and mechanical property, as varied to additive elastomer contents. There are four samples with 5[phr], 10[phr], 15[phr] and 20[phr]. We meIt was experimented with changing temperature($-80^{\circ}C{\sim}50^{\circ}C$) and frequency (10Hz, 60Hz, 1kHz, 10kHz) According to the experimental results, when the additive elastomer contents are increasing, the permittivity and tan${\delta}$ has very high value in particular at low frequency and high temperature. It also appears that those increasing rates relate to additive elastomer contents. That is to say, even though epoxy resin are improved in mechanical property according to elastomer contents, the elastic epoxy can has bad dielectric characteristics for electrical power application.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.163-163
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• 2008

• 대한수학회보
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• 제31권1호
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• pp.55-60
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• 1994

It is well known that if P(x,D) is an elliptic differential operator, with real analytic coefficients, and P(x,D)u = 0 in an open, connected subset .ohm..mem.R$^{n}$ , then u is real analytic in .ohm. Hence, if there exists x$_{0}$ .mem..ohm. such that u vanishes of .inf. order at x$_{0}$ , u must be identically 0. If a differential operator P(x, D) has the above property, we say that p(x,D) has the strong unique continuation property (s.u.c.p.). If, on the other hand, P(x,D)u = 0 in .ohm., and u = 0 in .ohm.', an open subset of .ohm., implies that u = 0 in .ohm. we say that P(x,D)u = 0 in .ohm., and suppu .contnd. K .contnd. .ohm implies that u = 0 in .ohm. we sat that P(x,D) has the weak unique continuation property (m.u.c.p.).