• 전자공학회논문지
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• 제50권11호
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• pp.219-225
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• 2013

본 논문은 소노스(SONOS) 형태의 타원형 게이트 올 어라운드(GAA) 구조를 갖는 플레쉬 셀의 프로그램과 삭제 특성을 채널의 이심률 변화에 대해 연구 하였다. 타원형 GAA SONOS 셀의 쓰기와 삭제에 대한 해석적 모델을 제안하고 평가하였다. 점진적 계단형 펄스 프로그램(ISPP)시 타원의 이심률이 증가할수록 인가 전압에 대해 문턱전압이 비선형적으로 변화한다. 이는 2차원 소노스 구조나 원형 3차원 GAA 구조에서 선형적 특성을 보이는 것과는 매우 다른 모습이다. ISPP 특성에 대한 모사의 결과는 실험적 결과와 잘 부합됨을 발견할 수 있다.

• Journal of Electrical Engineering and Technology
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• 제7권3호
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• pp.376-383
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• 2012

A number of scientific researches are currently being conducted on the potential health hazards of power frequency electric and magnetic field (EMF). There exists a non-objective and psychological belief that they are harmful, although no scientific and objective proof of such exists. This possible health risk from ELF magnetic field (MF) exposure, especially for children under 17 years of age, is currently one of Korea's most highly contested social issues. Therefore, to assess the magnetic field exposure levels of those children in their general living environments, the personal MF exposure levels of 436 subjects were measured for about 6 years using government funding. Using the measured database, estimation formulas were developed to predict personal MF exposure levels. These formulas can serve as valuable tools in estimating 24-hour personal MF exposure levels without directly measuring the exposure. Three types of estimation formulas were developed by applying evolutionary computation methods such as genetic algorithm (GA) and genetic programming (GP). After tuning the database, the final three formulas with the smallest estimation error were selected, where the target estimation error was approximately 0.03 ${\mu}T$. The seven parameters of each of these three formulas are gender (G), age (A), house type (H), house size (HS), distance between the subject's residence and a power line (RD), power line voltage class (KV), and the usage conditions of electric appliances (RULE).

• Journal of Electrical Engineering and Technology
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• 제5권2호
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• pp.179-190
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• 2010

This paper describes a new stochastic heuristic algorithm in engineering problem optimization especially in power system applications. An improved particle swarm optimization (PSO) called adaptive particle swarm optimization (APSO), mixed with simulated annealing (SA), is introduced and referred to as APSO-SA. This algorithm uses a novel PSO algorithm (APSO) to increase the convergence rate and incorporate the ability of SA to avoid being trapped in a local optimum. The APSO-SA algorithm efficiency is verified using some benchmark functions. This paper presents the application of APSO-SA to find the optimal location, type and size of flexible AC transmission system devices. Two types of FACTS devices, the thyristor controlled series capacitor (TCSC) and the static VAR compensator (SVC), are considered. The main objectives of the presented method are increasing the voltage stability index and over load factor, decreasing the cost of investment and total real power losses in the power system. In this regard, two cases are considered: single-type devices (same type of FACTS devices) and multi-type devices (combination of TCSC, SVC). Using the proposed method, the locations, type and sizes of FACTS devices are obtained to reach the optimal objective function. The APSO-SA is used to solve the above non.linear programming optimization problem for better accuracy and fast convergence and its results are compared with results of conventional PSO. The presented method expands the search space, improves performance and accelerates to the speed convergence, in comparison with the conventional PSO algorithm. The optimization results are compared with the standard PSO method. This comparison confirms the efficiency and validity of the proposed method. The proposed approach is examined and tested on IEEE 14 bus systems by MATLAB software. Numerical results demonstrate that the APSO-SA is fast and has a much lower computational cost.

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• 한국안전학회지
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• 제36권5호
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• pp.10-17
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• 2021

The controversy over the risk of the human body being affected by electromagnetic fields emitted from 60 Hz power lines continues without end. There are currently no new studies or research progress being made in this direction that is notable, and the number of civil complaints is gradually increasing. The problem is that each study produces different results, among which the effect of exposure to magnetic fields on childhood leukemia is a major one. In Korea, an electrician who was maintaining a 22.9 kV power line died of leukemia, which has recently been recognized as an occupational disease. Methods to reduce magnetic fields from power lines include shielding with wire loops, incorporating split phases and compaction techniques, installing underground power lines, converting to high-voltage direct current (HVDC), and increasing the ground clearance of transmission towers. Depending on whether a separate power supply is needed or not, there are two types of wire loops: passive loop and active loop. Magnetic field reduction is currently done through underground power lines; however, the disadvantage of this process is high construction costs. Installing passive loops, with relatively low construction costs, leads to lower magnetic field reduction rates than installing underground cables and a weakness to not solving the landscape problem. This methodological study aims at designing methods and reducing the effects of 2-wire set loops-the simplest and most practical. Since the method proposed in this study has been designed after analyzing the distribution of complex electromagnetic fields near the expected loop installation location, a practical design can be implemented without the need for any difficult optimization programming.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.376-381
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• 2019

In this work, we evaluated the structural, electrical and optical properties of $Ge_8Sb_2Te_{11}$ and Cu-doped $Ge_8Sb_2Te_{11}$ thin films prepared by rf-magnetron reactive sputtering. The 200-nm-thick deposited films were annealed in a range of $100{\sim}400^{\circ}C$ using a furnace in an $N_2$ atmosphere. The amorphous-to-crystalline phase changes of the thin films were investigated by X-ray diffraction (XRD), UV-Vis-IR spectrophotometry, a 4-point probe, and a source meter. A one-step phase transformation from amorphous to face-centered-cubic (fcc) and an increase of the crystallization temperature ($T_c$) was observed in the Cu-doped film, which indicates an enhanced thermal stability in the amorphous state. The difference in the optical energy band gap ($E_{op}$) between the amorphous and crystalline phases was relatively large, approximately 0.38~0.41 eV, which is beneficial for reducing the noise in the memory devices. The sheet resistance($R_s$) of the amorphous phase in the Cu-doped film was about 1.5 orders larger than that in undoped film. A large $R_s$ in the amorphous phase will reduce the programming current in the memory device. An increase of threshold voltage ($V_{th}$) was seen in the Cu-doped film, which implied a high thermal efficiency. This suggests that the Cu-doped $Ge_8Sb_2Te_{11}$ thin film is a good candidate for PRAM.

• 마이크로전자및패키징학회지
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• 제27권4호
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• pp.77-81
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• 2020

Resistive RAM (ReRAM)은 전이금속 산화물의 저항변화 특성을 이용하는 차세대 비휘발 메모리로 전이금속산화물 내의 산소공공의 재분포를 통한 저항변화 특성을 이용한다. 따라서 저항변화 특성을 위해 전이금속산화물 내에는 일정량 이상의 산소공공이 요구되며 이를 위해서는 박막 형성 공정에서 산화 수를 조절할 수 있는 공정이 필요하다. 본 연구에서는 직접패턴이 가능한 photochemical metal organic deposition (PMOD) 공정을 사용하여 UV 노출에 의해 photochemical metal organic precursor의 ligand가 분해되는 과정에서 전기장을 인가하여 박막내의 산화 수를 조절하는 실험을 진행하였다. Electric field assisted PMOD (EFAPMOD) 법을 이용하여 FeOx 박막의 산화 수 조절이 가능함을 x-ray photoelectron spectroscopy (XPS) 분석과 I-V 측정을 통하여 확인하였으며, EFAPMOD 공정 중 인가하는 전압의 크기를 조절하여 박막의 산화 수를 조절할 수 있음을 확인하였다. 따라서 EFAPMOD 공정 중 인가전압의 크기를 이용하여 저항변화 특성에 적합한 적정한 산화수를 가지는 금속산화물 박막을 얻고 그 저항변화 특성을 조정할 수 있음을 확인하였다.

• 한국정보전자통신기술학회논문지
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• 제8권2호
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• pp.107-115
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• 2015

본 논문에서는 Power IC용 저면적 32비트 differential paired eFuse OTP 메모리를 설계하였다. OTP 메모리 셀 어레이에서 행의 개수가 열의 개수보다 더 작은 경우 eFuse 링크의 프로그램 전류를 공급하는 SL (Source Line) 구동 라인을 열 방향으로 라우팅하는 대신 행 방향으로 라우팅하므로 레이아웃 면적을 많이 차지하는 SL 구동회로의 수를 줄이는 differential paired eFuse 셀 어레이 방식과 코어 회로를 제안하였다. 그리고 blowing되지 않은 eFuse 링크가 EM (Electro-Migration) 현상에 의해 blowing되는 불량을 해결하기 위해 RWL (Read Word-Line) 구동 회로와 BL (Bit-Line) 풀-업 부하회로에 V2V ($=2V{\pm}0.2V$)의 regulation된 전압을 사용하였다. 설계된 32비트 eFuse OTP 메모리의 레이아웃 면적은 $228.525{\mu}m{\times}105.435{\mu}m$으로 기존의 셀 어레이 라우팅을 이용한 IP 크기인 $197.485{\mu}m{\times}153.715{\mu}m$ 보다 20.7% 더 작은 것을 확인하였다.