• Asia Marketing Journal
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• 제16권2호
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• pp.15-38
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• 2014

This paper explores the influence of pursuing goals on customer channel preference in Chinese rural market. With the rapid change in distribution channels and increase in multi-channels, it is necessary to understand the preference for channel choice as well as product choice. This study empirically validated the conceptual framework of the relationship between the pursuing goals and customer channel choice proposed by Balasubramanian, Raghunathan, and Mahajan (2005). Based on the survey data of 232 fertilizer customers in Chinese rural market, this study explores how economic, social, and psychological pursuing goals can impact customer channel preference by mediating variables of product utility and process utility. The results indicate that pursuing goals positively related with product utility and process utility, and product / process utility can mediate the relationship between pursuing goals and customer channel preference positively. Consequently, we can conclude that customers' economic-social-psychological pursuing goals can directly influence customer channel preference via their purchase process utility and product utility. This result also implies that product utility is effective on process utility during consumer's buying decision making, and process utility and product utility are not mutually independent. Therefore, purchase process utility is a "latent driving force" on customer's channel choice decision.

• Korean Chemical Engineering Research
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• 제53권6호
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• pp.818-823
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• 2015

본 연구에서는 전산유체역학(CFD)을 이용하여 마이크로채널 내부의 Fischer-Tropsch(FT) 반응을 모사하였고, 나아가 반응채널의 너비와 높이, 냉각채널과의 거리 그리고 채널 사이 간격을 변수로 두고 채널 내부 온도에 대해 민감도 분석을 수행하였다. 마이크로채널 반응기는 채널 간의 열교환을 고려하기 위한 5개의 반응채널과 냉각채널을 대신한 냉각면으로 이루어져 있으며 채널의 높이와 너비를 포함한 변수들의 길이는 0.5 mm ~ 5.0 mm 범위에서 설정하였다. 반응물로는 $H_2$와 CO의 혼합기체($H_2/CO$ molar ratio=2)를 사용하였으며 반응기의 운전 조건은 $GHSV=10000h^{-1}$, 압력 20 bar와 온도 483 K($210^{\circ}C$)이다. 민감도 분석의 결과로 반응채널 내부의 최대 온도는 채널의 높이에 비례하며 너비에 대해서는 특정 길이 이상에서 영향을 받지 않는 것을 확인하였으며 이 중에 냉각채널과의 거리와 채널 사이 간격은 채널 내부 온도에 거의 영향을 미치지 않았다. 따라서 채널 레이아웃에서 반응채널의 높이는 짧을수록(약 2 mm 이하), 너비는 길수록(약 4 mm 이상) 열제거뿐만 아니라 생산량 측면에서 이득을 얻을 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• 환경영향평가
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• 제18권3호
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• pp.171-183
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• 2009

This study aims to analyze the sedimentary environment change in mid-channel bar of the lower Geum river basin after the construction of the estuary barrage using multi-temporal satellite data and GIS. The sedimentary environment changes were observed in mid-channel bar areas. The mid-channel bar F was found to have been newly formed for 10 years(1996-2006), whereas the mid-channel bar B located between mid-channel bar A and C has disappeared by erosion during the same periods. When examined by section, the areas of the mid-channel bar in the upper stream section from the Yipo's reference point generally increased due to the prevailing sedimentary environments, and those of the downstream section decreased where corrosive environments are dominant. In ternms of the centroid movement, the mid-channel bars grew up toward the downstream by switching erosion and accumulation, as sedimentation was prevailing in the downstream area of mid-channel bars and corrosion was dominant in the upper stream. Through grain size analysis, the study areas are divided into three sections according to the average grain size. In Section I, the mid-channel bars were formed as a result of sedimentary process of tides in the past. In Section II, the mid-channel bars were formed partly through the sedimentary process of rivers although the sedimentary process of tides is prevailing. In Section III, the mid-channel bars were formed mainly through the sedimentary process of rivers, even if it showed the sedimentary process of tides in the past.

• 한국산업융합학회 논문집
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• 제21권4호
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• pp.175-181
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• 2018

Stamping process and rubber pad forming process were performed to manufacture the bipolar plate for fuel cells. For that, a vacuum die casting process and a semi-solid forming process wherein liquid-state materials were used were adopted. After preparing the blank with the stainless steel thin plate having a thickness of 0.1 mm, the bipolar plate channel was formed with the stamping process and rubber pad forming process. The depth of the bipolar plate channel prepared by the stamping method was 0.45 mm and the depth of the bipolar plate channel prepared by the rubber pad forming process was 0.41 mm. Meanwhile, with the vacuum die casting and semi solid forming, the bipolar plate having a channel depth of 0.3 mm, same as the size of the die, could be formed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권3호
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• pp.237-244
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• 2013

A continuous, explicit drain-current equation for short-channel double-gate (DG) MOSFETs has been derived based on the explicit surface potential equation. The model is physically derived from Poisson's equation in each region of operation and adopted in the unified regional approach. The proposed model has been verified with numerical solutions, physically scalable with channel length and gate/oxide materials as well as oxide/channel thicknesses.

• Asia pacific journal of information systems
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• 제16권3호
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• pp.67-93
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• 2006

Some consumers prefer online and others prefer offline. What makes them prefer online or offline? There has been a lack of theoretical development to adequately explain consumers' channel switching behavior between traditional physical stores and new virtual stores. Through consumers' purchase decision processes, this study examined the reasons why consumers changed channels depending on purchase process stages. Consumer's purchase decision process could be divided into three stages: pre-purchase stage, purchase stage, and post-purchase stage. We used the intention of channel selection as a surrogate dependent variable of channel selection. And some constructs, that is, channel function, channel benefits, customer relationship benefits, and perceived behavioral control, were selected as independent variables. In buying look-and-feel products, it was identified that consumers preferred virtual stores to physical stores at pre-purchase stage. To put it concretely, all constructs except channel benefits were more influenced to consumers at virtual stores. This result implied that information searching function, which is a main function at pre-purchase stage, was better supported by virtual stores than physical stores. In purchase stage, consumers preferred physical stores to virtual stores. Specially, all constructs influenced much more to consumers at physical stores. This result implied that although escrow service and trusted third parties were introduced, consumers felt that financial risk, performance risk, social risk, etc. still remained highly online. Finally, consumers did not prefer any channel at post-purchase stage. But three independent variables, i.e. channel function, channel benefits, and customer relationship benefits, were significantly preferred at physical stores rather than virtual stores at post-purchase stage. So we concluded that physical stores were a little more preferred to virtual stores at post-purchase stage. Through this study, it was identified that most consumers might switch channels according to purchase process stages. So, first of all, sales representatives should decide that what benefits should be given them through virtual stores at the pre-purchase stage and through physical stores at the purchase and post-purchase stages, and then devise collaborative channel strategies.

• 한국생산제조학회지
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• 제22권2호
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• pp.298-303
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• 2013

Magnetic abrasive polishing is one of the most promising finishing methods applicable to complex surfaces. Nevertheless this process has a low efficiency when applied to very hardened materials. For this reason, EP-MAP hybrid process was developed. EP-MAP process is expected to machine complex and hardened materials. In this research, deburring process using EP-MAP hybrid process was proposed. EP-MAP deburring process is applied to micro channel, thereby it can obtain both deburring process and polishing process. EP-MAP deburring process on the micro channel was performed. Through design of experiment method, error of height in this process according to process parameter is analyzed. When the level 1 parameter A(magnetic flux density) and level 2 parameter B(electric potential), C(working gap) and level 3 parameter D(feed rate) are applied in the deburring process using EP-MAP hybrid process, it provides optimum result of EP-MAP hybrid deburring process.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.258-260
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• 2008

Developed halftone exposure technique was successfully applied to the fabrication of narrow transistor channels below $4\;{\mu}m$ with conventional photolithography method. Asymmetric slits concept of photo mask was applied to make channel lengths (L) shorter for thin film transistor's (TFT) high performance. These short channel TFTs verified better quality transistor characteristics.

• 한국재료학회지
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• 제18권5호
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• pp.272-276
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• 2008

In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.