• Title/Summary/Keyword: Process Channel

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Impact of Pursuing Goals on Customer Channel Preference: Mediating Effects of Product Utility and Process Utility

  • Li, Dao-sheng;Lee, Hyunjoung;Hong, Jinhwan
    • Asia Marketing Journal
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    • v.16 no.2
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    • pp.15-38
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    • 2014
  • This paper explores the influence of pursuing goals on customer channel preference in Chinese rural market. With the rapid change in distribution channels and increase in multi-channels, it is necessary to understand the preference for channel choice as well as product choice. This study empirically validated the conceptual framework of the relationship between the pursuing goals and customer channel choice proposed by Balasubramanian, Raghunathan, and Mahajan (2005). Based on the survey data of 232 fertilizer customers in Chinese rural market, this study explores how economic, social, and psychological pursuing goals can impact customer channel preference by mediating variables of product utility and process utility. The results indicate that pursuing goals positively related with product utility and process utility, and product / process utility can mediate the relationship between pursuing goals and customer channel preference positively. Consequently, we can conclude that customers' economic-social-psychological pursuing goals can directly influence customer channel preference via their purchase process utility and product utility. This result also implies that product utility is effective on process utility during consumer's buying decision making, and process utility and product utility are not mutually independent. Therefore, purchase process utility is a "latent driving force" on customer's channel choice decision.

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Analysis on Thermal Effects of Process Channel Geometry for Microchannel Fischer-Tropsch Reactor Using Computational Fluid Dynamics (전산유체역학을 이용한 Fischer-Tropsch 마이크로채널 반응기 반응채널구조에 따른 열적 효과 분석)

  • Lee, Yongkyu;Jung, Ikhwan;Na, Jonggeol;Park, Seongho;Kshetrimayum, Krishnadash S.;Han, Chonghun
    • Korean Chemical Engineering Research
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    • v.53 no.6
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    • pp.818-823
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    • 2015
  • In this study, FT reaction in a microchannel was simulated using computational fluid dynamics(CFD), and sensitivity analyses conducted to see effects of channel geometry variables, namely, process channel width, height, gap between process channel and cooling channel, and gap between process channels on the channel temperature profile. Microchannel reactor considered in the study is composed of five reaction channels with height and width ranging from 0.5 mm to 5.0 mm. Cooling surfaces is assumed to be in isothermal condition to account for the heat exchange between the surface and process channels. A gas mixture of $H_2$ and CO($H_2/CO$ molar ratio = 2) is used as a reactant and operating conditions are the following: GHSV(gas hourly space velocity) = $10000h^{-1}$, pressure = 20 bar, and temperature = 483 K. From the simulation study, it was confirmed that heat removal in an FT microchannel reactor is affected channel geometry variables. Of the channel geometry variables considered, channel height and width have significant effect on the channel temperature profile. However, gap between cooling surface and process channel, and gap between process channels have little effect. Maximum temperature in the reaction channel was found to be proportional to channel height, and not affected by the width over a particular channel width size. Therefore, microchannels with smaller channel height(about less than 2 mm) and bigger channel width (about more than 4 mm), can be attractive design for better heat removal and higher production.

Subthreshold characteristics of buried-channel pMOSFET device (매몰채널 pMOSFET소자의 서브쓰레쉬홀드 특성 고찰)

  • 서용진;장의구
    • Electrical & Electronic Materials
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    • v.8 no.6
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    • pp.708-714
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    • 1995
  • We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

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Sedimentary Environment Change in Mid-channel Bar of the Lower Geum River Using Multi-temporal Satellite Data (다중시기 영상자료를 이용한 금강하류의 하중도 퇴적환경 변화)

  • Hong, Ki-Byung;Jang, Dong-Ho
    • Journal of Environmental Impact Assessment
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    • v.18 no.3
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    • pp.171-183
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    • 2009
  • This study aims to analyze the sedimentary environment change in mid-channel bar of the lower Geum river basin after the construction of the estuary barrage using multi-temporal satellite data and GIS. The sedimentary environment changes were observed in mid-channel bar areas. The mid-channel bar F was found to have been newly formed for 10 years(1996-2006), whereas the mid-channel bar B located between mid-channel bar A and C has disappeared by erosion during the same periods. When examined by section, the areas of the mid-channel bar in the upper stream section from the Yipo's reference point generally increased due to the prevailing sedimentary environments, and those of the downstream section decreased where corrosive environments are dominant. In ternms of the centroid movement, the mid-channel bars grew up toward the downstream by switching erosion and accumulation, as sedimentation was prevailing in the downstream area of mid-channel bars and corrosion was dominant in the upper stream. Through grain size analysis, the study areas are divided into three sections according to the average grain size. In Section I, the mid-channel bars were formed as a result of sedimentary process of tides in the past. In Section II, the mid-channel bars were formed partly through the sedimentary process of rivers although the sedimentary process of tides is prevailing. In Section III, the mid-channel bars were formed mainly through the sedimentary process of rivers, even if it showed the sedimentary process of tides in the past.

Studies on the Forming Process for the Bipolar Plate of Fuel Cells

  • Jin, Chul-Kyu;Lee, Jun-Kyoung
    • Journal of the Korean Society of Industry Convergence
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    • v.21 no.4
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    • pp.175-181
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    • 2018
  • Stamping process and rubber pad forming process were performed to manufacture the bipolar plate for fuel cells. For that, a vacuum die casting process and a semi-solid forming process wherein liquid-state materials were used were adopted. After preparing the blank with the stainless steel thin plate having a thickness of 0.1 mm, the bipolar plate channel was formed with the stamping process and rubber pad forming process. The depth of the bipolar plate channel prepared by the stamping method was 0.45 mm and the depth of the bipolar plate channel prepared by the rubber pad forming process was 0.41 mm. Meanwhile, with the vacuum die casting and semi solid forming, the bipolar plate having a channel depth of 0.3 mm, same as the size of the die, could be formed.

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

  • Zhu, Zhaomin;Yan, Dawei;Xu, Guoqing;Peng, Yong;Gu, Xiaofeng
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.3
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    • pp.237-244
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    • 2013
  • A continuous, explicit drain-current equation for short-channel double-gate (DG) MOSFETs has been derived based on the explicit surface potential equation. The model is physically derived from Poisson's equation in each region of operation and adopted in the unified regional approach. The proposed model has been verified with numerical solutions, physically scalable with channel length and gate/oxide materials as well as oxide/channel thicknesses.

A Collaborative Channel Strategy of Physical and Virtual Stores for Look-and-feel Products (물리적 상점과 가상 상점의 협업적 경로전략: 감각상품을 중심으로)

  • Kim, Jin-Baek;Oh, Chang-Gyu
    • Asia pacific journal of information systems
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    • v.16 no.3
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    • pp.67-93
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    • 2006
  • Some consumers prefer online and others prefer offline. What makes them prefer online or offline? There has been a lack of theoretical development to adequately explain consumers' channel switching behavior between traditional physical stores and new virtual stores. Through consumers' purchase decision processes, this study examined the reasons why consumers changed channels depending on purchase process stages. Consumer's purchase decision process could be divided into three stages: pre-purchase stage, purchase stage, and post-purchase stage. We used the intention of channel selection as a surrogate dependent variable of channel selection. And some constructs, that is, channel function, channel benefits, customer relationship benefits, and perceived behavioral control, were selected as independent variables. In buying look-and-feel products, it was identified that consumers preferred virtual stores to physical stores at pre-purchase stage. To put it concretely, all constructs except channel benefits were more influenced to consumers at virtual stores. This result implied that information searching function, which is a main function at pre-purchase stage, was better supported by virtual stores than physical stores. In purchase stage, consumers preferred physical stores to virtual stores. Specially, all constructs influenced much more to consumers at physical stores. This result implied that although escrow service and trusted third parties were introduced, consumers felt that financial risk, performance risk, social risk, etc. still remained highly online. Finally, consumers did not prefer any channel at post-purchase stage. But three independent variables, i.e. channel function, channel benefits, and customer relationship benefits, were significantly preferred at physical stores rather than virtual stores at post-purchase stage. So we concluded that physical stores were a little more preferred to virtual stores at post-purchase stage. Through this study, it was identified that most consumers might switch channels according to purchase process stages. So, first of all, sales representatives should decide that what benefits should be given them through virtual stores at the pre-purchase stage and through physical stores at the purchase and post-purchase stages, and then devise collaborative channel strategies.

A Study on the Optimization of Deburring Process for the Micro Channel using EP-MAP Hybrid Process (전해-자기 복합 가공을 이용한 마이크로 채널 디버링공정 최적화)

  • Lee, Sung-Ho;Kwak, Jae-Seob
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.2
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    • pp.298-303
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    • 2013
  • Magnetic abrasive polishing is one of the most promising finishing methods applicable to complex surfaces. Nevertheless this process has a low efficiency when applied to very hardened materials. For this reason, EP-MAP hybrid process was developed. EP-MAP process is expected to machine complex and hardened materials. In this research, deburring process using EP-MAP hybrid process was proposed. EP-MAP deburring process is applied to micro channel, thereby it can obtain both deburring process and polishing process. EP-MAP deburring process on the micro channel was performed. Through design of experiment method, error of height in this process according to process parameter is analyzed. When the level 1 parameter A(magnetic flux density) and level 2 parameter B(electric potential), C(working gap) and level 3 parameter D(feed rate) are applied in the deburring process using EP-MAP hybrid process, it provides optimum result of EP-MAP hybrid deburring process.

Narrow Channel Formation Using Asymmetric Halftone Exposure with Conventional Photolithography

  • Cheon, Ki-Cheol;Woo, Ju-Hyun;Jung, Deuk-Soo;Park, Mun-Gi;Kim, Hwan;Lim, Byoung-Ho;Yu, Sang-Jean
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.258-260
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    • 2008
  • Developed halftone exposure technique was successfully applied to the fabrication of narrow transistor channels below $4\;{\mu}m$ with conventional photolithography method. Asymmetric slits concept of photo mask was applied to make channel lengths (L) shorter for thin film transistor's (TFT) high performance. These short channel TFTs verified better quality transistor characteristics.

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Investigation of Optimal Channel Doping Concentration for 0.1\;μm SOI-MOSFET by Process and Device Simulation ([ 0.1\;μm ] SOI-MOSFET의 적정 채널도핑농도에 관한 시뮬레이션 연구)

  • Choe, Kwang-Su
    • Korean Journal of Materials Research
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    • v.18 no.5
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    • pp.272-276
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    • 2008
  • In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.