• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.697-700
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• 2008

The underpotential deposited Bi on Pt($Bi_{upd}/Pt$) anode for formic acid fuel cells (FAFCs) was developed using multi-layered preparation method for better electrocatalytic utilization of Pt. The electron probe microanalysis (EPMA) result indicated that $Bi_{upd}$ remains through the catalyst layer during stability test. In performance test, the multilayered $Bi_{upd}$ on Pt black showed superior performance by approximately 200 mV at current density of $150mA/cm^2$ compared with PtRu black anode catalyst. Based on preparation condition of $Bi_{upd}/Pt$ black, carbon supported $Bi_{upd}/Pt/C$ electrode was prepared and it showed enhanced performance and stability.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.19-24
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• 2010

The current study examined Ag migration from the Ag paste bump in the SABiT technology-applied PCB. A series of experiments were performed to measure the existence/non-existence of Ag in the insulating prepreg region. The average grain size of Ag paste was 30 nm according to X-ray diffraction (XRD) measurement. Conventional XRD showed limitations in finding a small amount of Ag in the prepreg region. The surface morphology and cross section view in the Cu line-Ag paste bump-Cu line structure were observed using a field emission scanning electron microscope (FE-SEM). The amount of Ag as a function of distance from the edge of Ag paste bump was obtained by FE-SEM with energy dispersive spectroscopy (EDS). We used an electron probe micro analyzer (EPMA) to improve the detecting resolution of Ag content and achieved the Ag distribution function as a function of the distance from the edge of the Ag paste bump. The same method with EPMA was applied for Cu filled via instead of Ag paste bump. We compared the distribution function of Ag and Cu, obtained from EPMA, and concluded that there was no considerable Ag migration effect for the SABiT technology-applied printed circuit board (PCB).

• Journal of Communications and Networks
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• v.13 no.5
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• pp.518-524
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• 2011

A high assurance IP encryption (HAIPE) compliant protocol accelerator is proposed for military networks consisting of red (or classified) networks and black (or unclassified) networks. The boundary between red and black sides is assumed to be protected via a HAIPE device. However, the IP layer encryption introduces challenges for bandwidth on demand satellite communication. The problems experienced by transmission control protocol (TCP) over satellites are well understood: While standard modems (on the black side) employ TCP performance enhancing proxy (PEP) which has been shown to work well, the HAIPE encryption of TCP headers renders the onboard modem's PEP ineffective. This is attributed to the fact that under the bandwidth-on-demand environment, PEP must use traditional TCP mechanisms such as slow start to probe for the available bandwidth of the link (which eliminates the usefulness of the PEP). Most implementations recommend disabling the PEP when a HAIPE device is used. In this paper, we propose a novel solution, namely broadband HAIPE-embeddable satellite communications terminal (BHeST), which utilizes dynamic network performance enhancement algorithms for high latency bandwidth-on-demand satellite links protected by HAIPE. By moving the PEP into the red network and exploiting the explicit congestion notification bypass mechanism allowed by the latest HAIPE standard, we have been able to regain PEP's desired network enhancement that was lost due to HAIPE encryption (even though the idea of deploying PEP at the modem side is not new). Our BHeST solution employs direct video broadcast-return channel service (DVB-RCS), an open standard as a means of providing bandwidth-on-demand satellite links. Another issue we address is the estimation of current satellite bandwidth allocated to a remote terminal which is not available in DVBRCS. Simulation results show that the improvement of our solution over FIX PEP is significant and could reach up to 100%. The improvement over the original TCP is even more (up to 500% for certain configurations).

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.260-262
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• 2002

The determination of DNA hybridization can apply the molecular biology research. clinic diagnostics. bioengineering, environment monitoring, food science and other application area. So, The determination of hybridization is very important for the improvement of DNA detection system. In this study, we report the characterization of the DNA hybridization by the electricalchemical methods. The probe oligonucleotide was used to determine the amount of target oligonucleotide in solution using Methylen Blue(MB) as the electrochemical indicators. The cathodic peak currents($I_{peak}$) of MB were linearly related to the concentration of the target oligonucleotide sequence in the range $1[{\mu}M]{\sim}0.1[{\mu}M]$. The detection limit of this approach was 0.01[nM]. As a result, the match oligonucleotide(CR-1) was most stable state and the peak of redox current measured by DNA hybridization detection sensors by using electrochemical method seem to be similar to 1-mer terminal mismatch oligonucleotide(MR-3). The MR-2, MR-3, MR-22 and MR-33 have each mismatching sequence of central and terminal. With this set the role of point mutations was to be investigated. Terminal mismatch oligonucleotide (MR-3, 33) is shown more stable state than central mismatch oligonucleotide(MR-2, 22). And 1-mer mismatch oligonucleotide(MR-2 or 3) is shown more stable state than 2-mer mismatch oligonucleotide(MR-22 or 33).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.571-574
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• 2010

Surface recombination loss should be reduced for high efficiency of solar cells. To reduce this loss, the BSF (back surface field) is used. The BSF on the back of the p-type wafer forms a p+layer, which prevents the activity of electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. Therefore, the open-circuit-voltage (Voc) and fill factor (FF) of solar cells are increased. This paper investigates the formation of the rear contact process by comparing aluminum-paste (Al-paste) with pure aluminum-metal(99.9%). Under the vacuum evaporation process, pure aluminum-metal(99.9%) provides high conductivity and low contact resistance of $4.2\;m{\Omega}cm$, but It is difficult to apply the standard industrial process to it because high vacuum is needed, and it's more expensive than the commercial equipment. On the other hand, using the Al-paste process by screen printing is simple for the formation of metal contact, and it is possible to produce the standard industrial process. However, Al-paste used in screen printing is lower than the conductivity of pure aluminum-metal(99.9) because of its mass glass frit. In this study, contact resistances were measured by a 4-point probe. The contact resistance of pure aluminum-metal was $4.2\;m{\Omega}cm$ and that of Al-paste was $35.69\;m{\Omega}cm$. Then the rear contact was analyzed by scanning electron microscope (SEM).

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• Korean Journal of Metals and Materials
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• v.48 no.10
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• pp.951-956
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• 2010

This study examined the effect of copper and sulfuric acid concentrations on the surface morphology and physical properties of copper plated on a polyimide (PI) film. Electrochemical experiments with SEM and a four-point probe were performed to characterize the morphology and mechanical characteristics of copper electrodeposited in the composition of an electrolyte. The resistivity and peel strength were controlled using a range of electrolyte compositions. A lower resistivity and high flexibility were obtained when an electrolyte with 20 g/l of copper was used. However, a uniform surface was obtained when a high current density that exceeded $20mA/cm^2$ was applied, which was maintained at copper concentrations exceeding 40 g/l. Increasing sulfuric acid to >150 g/l decreased the peel strength and flexibility. The lowest resistivity and fine adhesion were detected at a $Cu^{2+}:H_2SO_4$ ratio of 50:100 g/l.

• Corrosion Science and Technology
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• v.18 no.5
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• pp.206-211
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• 2019

Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystalline grains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardment and deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetron sputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed target power of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films was conducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The deposition temperature was varied between room temperature and $450^{\circ}C$. Above a critical bias voltage of -80 V, the NCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy (corresponding to a deposition temperature of $450^{\circ}C$ in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD) were conducted to probe the samples' structural characteristics. Of those methods, Raman spectroscopy was a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film, whereas GAXRD was insufficiently sensitive.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.376-381
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• 2019

In this work, we evaluated the structural, electrical and optical properties of $Ge_8Sb_2Te_{11}$ and Cu-doped $Ge_8Sb_2Te_{11}$ thin films prepared by rf-magnetron reactive sputtering. The 200-nm-thick deposited films were annealed in a range of $100{\sim}400^{\circ}C$ using a furnace in an $N_2$ atmosphere. The amorphous-to-crystalline phase changes of the thin films were investigated by X-ray diffraction (XRD), UV-Vis-IR spectrophotometry, a 4-point probe, and a source meter. A one-step phase transformation from amorphous to face-centered-cubic (fcc) and an increase of the crystallization temperature ($T_c$) was observed in the Cu-doped film, which indicates an enhanced thermal stability in the amorphous state. The difference in the optical energy band gap ($E_{op}$) between the amorphous and crystalline phases was relatively large, approximately 0.38~0.41 eV, which is beneficial for reducing the noise in the memory devices. The sheet resistance($R_s$) of the amorphous phase in the Cu-doped film was about 1.5 orders larger than that in undoped film. A large $R_s$ in the amorphous phase will reduce the programming current in the memory device. An increase of threshold voltage ($V_{th}$) was seen in the Cu-doped film, which implied a high thermal efficiency. This suggests that the Cu-doped $Ge_8Sb_2Te_{11}$ thin film is a good candidate for PRAM.

• Journal of Digital Convergence
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• v.19 no.4
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• pp.349-353
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• 2021

This study is a review study attempted to analyze the current situation of surgical robots based on previous research on surgical robots in the era of the 4th revolution, and to forecast the future direction of surgical robots. Surgical robots have made full progress since the launch of the da Vinci and the surgical robot is playing a role of supporting the surgeries of the surgeons or the master-slave method reflecting the intention of the surgeons. Recently, technologies are being developed to combine artificial intelligence and big data with surgical robots, and to commercialize a universal platform rather than a platform dedicated to surgery. Moreover, technologies for automating surgical robots are being developed by generating 3D image data based on diagnostic image data, providing real-time images, and integrating image data into one system. For the development of surgical robots, cooperation with clinicians and engineers, safety management of surgical robot, and institutional support for the use of surgical robots will be required.