• Title/Summary/Keyword: Pressure Sensor

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Development of Digital Vacuum Pressure Sensor Using MEMS Analog Pirani Gauge

  • Cho, Young Seek
    • Journal of information and communication convergence engineering
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    • v.15 no.4
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    • pp.232-236
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    • 2017
  • A digital vacuum pressure sensor is designed, fabricated, and characterized using a packaged MEMS analog Pirani gauge. The packaged MEMS analog Pirani gauge requires a current source to heat up a heater in the Pirani gauge. To investigate the feasibility of digitization for the analog Pirani gauge, its implementation is performed with a zero-temperature coefficient current source and microcontroller that are commercially available. The measurement results using the digital vacuum pressure sensor showed that its operating range is 0.05-760 Torr, which is the same as the measurement results of the packaged MEMS analog pressure sensor. The results confirm that it is feasible to integrate the analog Pirani gauge with a commercially available current source and microcontroller. The successful hybrid integration of the analog Pirani gauge and digital circuits is an encouraging result for monolithic integration with a precision current source and ADCs in the state of CMOS dies.

Characteristics silicon pressure sensor using dry etching technology (건식식각 기술 이용한 실리콘 압력센서의 특성)

  • Woo, Dong-Kyun;Lee, Kyung-Il;Kim, Heung-Rak;Suh, Ho-Cheol;Lee, Young-Tae
    • Journal of Sensor Science and Technology
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    • v.19 no.2
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    • pp.137-141
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    • 2010
  • In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/V${\cdot}$kPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.

Fabrication of a multi-functional one-chip sensor for detecting water depth, temperature, and conductivity (수위, 온도, 전도도 측정을 위한 다기능 One-Chip 센서의 제조)

  • Song, Nak-Chun;Cho, Yong-Soo;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.15 no.1
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    • pp.7-12
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    • 2006
  • The multi-functional one-chip sensor has been fabricated to reduce output variation under various water environment. There were a temperature sensor, a piezoresistive type pressure sensor, and a electrode type conductivity sensor in the fabricated one-chip sensor. This sensor was measured water depth in the range of $0{\sim}180cm$, temperature in the range of $0{\sim}50^{\circ}C$, and salinity in the range of 0 $0wt%{\sim}5wt%$, respectively. Since the change of water depth in solution environment depends on various factors such as salinity, latitude, temperature, and atmospheric pressure, the water depth sensor is needed to be compensated. We tried to compensate the salinity and temperature dependence for the pressure in water by using lookup-table method.

Interference Effects on the Thickness of a Pulse Pressure Sensor Array Coated with Silicone (맥 센서 어레이(array)의 실리콘(silicone) 코팅 두께에 따른 센서 간 간섭효과)

  • Jun, Min-Ho;Jeon, Young Ju;Kim, Young-Min
    • Journal of Sensor Science and Technology
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    • v.25 no.1
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    • pp.35-40
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    • 2016
  • Pulse diagnosis is one of the representative diagnostic methods in Oriental medicine. In this study, a pulse pressure sensor array coated with silicone, which includes 6 piezo-resistive sensors and 1 thermistor, is fabricated for pulse measurement. It is necessary to coat the pulse sensor array with silicone to avoid the fracture or damage of pressure sensors when the sensor is in contact with the skin and a constant pressure is applied. However, the silicone coating on the pulse sensor array can cause signal interference among the sensors in the pulse sensor array. The interference number (IN), a calculation for expressing the degree of interference among channels, is changed according to the silicone thickness on the pulse sensor array. The IN is increased by a thick silicone coating, but the fabrication error, an important index for the mass production of the sensor array, is reduced by the thickness of the silicone coating. We propose that the thickness of the silicone on the pulse sensor array is an important consideration for the performance of the fabricated sensor and manufacturing repeatability.

Development of Pressure Sensor on Polymer Substrate for Real-time Pulse and Blood Pressure Measurements (실시간 맥박 및 혈압 측정을 위한 폴리머 기판 압력센서 개발)

  • Kim, Jin-Tae;Kim, Sung Il;Joung, Yeun-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.9
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    • pp.669-676
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    • 2013
  • In this study, we introduce a polymer(polyimide) based pressure sensor to measure real-time heart beat and blood pressure. The sensor have been designed with consideration of skin compatibility of material, cost effectiveness, manufacturability and wireless detection. The designed sensor was composed of inductor coils and an air-gap capacitor which generate self-resonant frequency when electrical source is applied on the system. The sensor was obtained with metalization, etching, photolithography, polymer adhesive bonding and laser cutting. The fabricated sensor was shaped in circular type with 10mm diameter and 0.45 mm thickness to fit radial artery. Resonant frequencies of the fabricated sensors were in the range of 91~96 MHz on 760 mmHg pressurized environment. Also the sensor has good linearity without any pressure-frequency hysteresis. Sensitivity of the sensor was 145.5 kHz/mmHg and accuracy was less than 2 mmHg. Real-time heart beat measurement was executed with a developed hand-held measurement system. Possibility of real-time blood pressure measurement was showed with simulated artery system. After installation of the sensor on skin above radial artery, simple real blood pressure measurement was performed with 64 mmHg blood pressure variation.

Finite Element Analysis of Capacitive pressure sensor with Touch mode for improving non-linearity (비선형성의 개선을 위한 Capacitive pressure sensor의 Touch mode 방식에 대한 유한요소 해석)

  • Kim, Do-Hyung;O, Jea-Geun;Choi, Bum-Kyoo
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.2087-2089
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    • 2004
  • Capacitive pressure sensor는 Piezo type sensor에 비해 온도의 영향이 적어 공업계측, 전기용품 등 그 용도가 다양하여 폭넓게 사용되어지고 있지만, 측정값의 비선형성이 존재하여 측정값에 대한 신뢰도가 떨어지는 단점이 있다. 본 연구에서는 기존 capacitive pressure sensor의 비선형적 output을 개선하기 위한 방법으로 touch mode capacitive pressure sensor를 제안하였다. 또한, 실제 Device제작에 앞서 FEM 해석을 수행하였다. 2mm X 2mm 크기의 diaphragm, $25{\mu}m$의 두께, $20{\mu}m$의 gap을 갖는 Sensor를 Simulation하였으며 설계 변수를 추출하여 각각의 설계변수에 대한 해석을 실시하였다. 그 결과 15.2psi${\sim}$31psi의 영역에서 8.58pF${\sim}$54.31pF의 capacitance가 선형적으로 나타나는 sensor임을 확인하였다.

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A Study on the Pressure Sensor for the Direct Detection of the Approach to the Dangerous Power Facilities Using Pb-free BNKT Ceramics (무연 BNKT 세라믹스를 이용한 위해(危害)전력설비 접근 직접감지용 압력센서에 관한 연구)

  • Hong, Jae-Il;Yoo, Ju-Hyun
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.55 no.1
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    • pp.31-34
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    • 2006
  • A infrared rays sensor or ultrasonic sensor can detect the object at the narrow area, however a pressure sensor can detect man and animal at the wide area. It is necessary to manufacture the sensor by using Pb-free ceramics in the respect of environmental protection. Piezoelectric properties of ceramics added 0.2wt% $La_2O_3\;into\;0.96Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}+0.04SrTiO_3$ were 0.4 of kp, $31{\times}$10^{-3}Vm/N\;of\;g_{33}$. The output voltage of the pressure sensor is 0.48 V at 20 in$H_2O$. The output voltage of the pressure sensor with driving circuit is 9.8 V, 37 ms width.

Development of the High Temperature Silicon Pressure Sensor (고온용 실리콘 압력센서 개발)

  • Kim, Mi-Mook;Nam, Tae-Chul;Lee, Young-Tae
    • Journal of Sensor Science and Technology
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    • v.13 no.3
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    • pp.175-181
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    • 2004
  • A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/$SiO_{2}$/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over $120^{\circ}C$, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of $183.6{\mu}V/V{\cdot}kPa$, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of $300^{\circ}C$.

Development of miniature weight sensor using piezoresistive pressure sensor (압저항형 압력센서를 이용한 초소형 하중센서의 개발)

  • Kim, Woo-Jeong;Cho, Yong-Soo;Kang, Hyun-Jae;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.14 no.4
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    • pp.237-243
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    • 2005
  • Strain gauge type load cell is used widely as weight sensor. However, it has problems such as noise, power consumption, high cost and big size. Semiconductor type piezoresistive pressure sensor is practically used in recent for low hysteresis, good linearity, small size, light weight and strong on vibration. In this paper, we have fabricated the piezoresistive pressure sensor and packaged the miniature weight sensor. We packaged the miniature weight sensor by flip-chip bonding between die and PCB for durability, because the weight sensor is directly contacted on a physical solid distinct from air and oil pressure. We measured the characteristics of the weight sensor, which had the output of $10{\sim}80$ mV on the weight range of $0{\sim}2$ kg. In the result, we could fabricate the weight sensor with an accuracy of 3 %FSO linearity.

A Study on the Measurement of Oil-Film Pressure in Engine Connecting Rod Bearing and Piston Pin-Boss by Thin-Film Sensor

  • Mihara, Yuji;Someya, Tsuneo
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.409-410
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    • 2002
  • In order to measure the oil-film pressure in sliding surface of machinery, we have developed a piezo-resistive type thin-film pressure sensor. To reduce the measurement error due to temperature and strain, the constituent of the pressure sensitive alloy was optimized and a new sensor shape was devised. In this study, we present the measurement results of the oil-film pressure distribution in engine connecting rod big-end bearing and piston pin- bosses with 3 different pin-boss shapes using the newly developed thin-film pressure sensor.

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