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http://dx.doi.org/10.5369/JSST.2010.19.2.137

Characteristics silicon pressure sensor using dry etching technology  

Woo, Dong-Kyun (Andong National University)
Lee, Kyung-Il (Research Institute of Industrial Science & Technology)
Kim, Heung-Rak (Research Institute of Industrial Science & Technology)
Suh, Ho-Cheol (SEJONG industrial CO.LTD)
Lee, Young-Tae (Andong National University)
Publication Information
Journal of Sensor Science and Technology / v.19, no.2, 2010 , pp. 137-141 More about this Journal
Abstract
In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/V${\cdot}$kPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.
Keywords
pressure sensor; SOI; dry etching;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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