• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.273-276
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• 1997

This paper describes the thermally stimulated current (TSC) measurements of arachidic acid and polyamic acid alkylamine salt(PAAS) LB film, which is a precursor of polyimide(PI). The measurements were performed from room temperature to about 25$0^{\circ}C$ and the temperature was increased at a rate of 0.02 K/s linearly. It shows that peaks of TSC are observed at about 8$0^{\circ}C$ in the arachidic acid and about 8$0^{\circ}C$, 16$0^{\circ}C$ in the PAAS LB films. Results of these measurements indicate that one peak at 8$0^{\circ}C$ is resulted from alkyl group; the other peak at 16$0^{\circ}C$ is due to alkyl and C-O group of PAAS. Additional large peak at about 16$0^{\circ}C$ is due to dipole moments in the PAAS films. The DSC of PAAS, arachidic acid and octadesylamine are measured. Thermal imidization was performed at 30$0^{\circ}C$ for 1 hour by our pre study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.257-258
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• 2006

ZnO thin films were prepared by RF magnetron sputter deposition on p-Si(100) wafer with various cooling rates of substrate temperature such as the substrates were pre-heated to $400^{\circ}C$ before the deposition and then cooled down naturally or slowly to $300^{\circ}C$, $200^{\circ}C$, $100^{\circ}C$, and R.T., by the temperature controller during the deposition. The crystall me and micro-structural characteristics of the films were investigated by XRD and SEM ZnO films which cooled down naturally or slowly by temperature controller during deposition, especially the film were deposited with cooling down from $400^{\circ}C$ to $200^{\circ}C$ slowly, showed the most outstanding c-axis preferred orientation.

• ETRI Journal
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• v.28 no.6
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• pp.787-789
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• 2006

In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-$Al_2O_3$ substrates. However, pre-growth annealing of the Au thin layer on c-$Al_2O_3$ resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.3
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• pp.307-314
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• 2015

In this paper, the embedding type novel liquid metal strain gauge was developed for measuring the deformation of wind turbine blades. In general, the conventional methods for the SHM have many disadvantages such as frequency distortion in FBG sensors, the low gauge factor and mechanical failures in strain gauges and extremely sophisticated filtering in AE sensors. However, the liquid metal filled in a pre-confined micro channel shows dramatic characteristics such as high sensitivity, flexibility and robustnes! s to environment. To adopt such a high feasibility of the liquid metal in flexible sensor applications, the EGaIn was introduced to make flexible liquid metal strain gauges for the SHM. A micro channeled flexible film fabricated by the several MEMS processes and the PDMS replication was filled with EGaIn and wire-connected. Lots of experiments were conducted to investigate the performance of the developed strain gauges and verify the feasibility to the actual wind turbine blades health monitoring.

• Bulletin of the Korean Chemical Society
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• v.24 no.2
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• pp.183-188
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• 2003

The micro-patterning of multi-layered thin films containing CdS and $Ta_2O_5$ layers on ITO substrate with various structures was successfully obtained by combining three different techniques: chemical solution depositions, sol-gel, and microcontact printing (μCP) methods using octadecyltrichlorosilane (OTS) as the organic thin layer template. $Ta_2O_5$ layer was prepared by sol-gel casting and CdS one obtained by chemical solution deposition, respectively. Parallel and cross patterns of multi-layers with $Ta_2O_5$ and CdS films were fabricated additively by successive removal of OTS layer pre-formed. This study presents the designed architectures consisting of the two types of feature having horizontal dimensions of 170 ㎛ and 340 ㎛ with constant thickness ca. 150 nm of each deposited materials. The thin film lay-out of the cross-patterning is composed of four regions with chemically different layer compositions, which are confirmed by Auger electron microanalysis.

• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4371-4376
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• 2011

In this work, we investigate the growth behavior of silicon oxide nanowires via a solid-liquid-solid process. Silicon oxide nanowires were synthesized at $1000^{\circ}C$ in an Ar and $H_2$ mixed gas. A pre-oxidized silicon wafer and a nickel film are used as the substrate and catalyst, respectively. We propose two distinctive growth modes for the silicon oxide nanowires that both act as a unique solid-liquid-solid growth process. We named the two growth mechanisms "grounded-growth" and "branched-growth" modes to characterize their unique solid-liquid-solid growth behavior. The two growth modes were classified by the generation site of the nanowires. The grounded-growth mode in which the grown nanowires are generated from the substrate and the branchedgrowth mode where the nanowires are grown from the side of the previously grown nanowires or at the metal catalyst drop attached at the tip of the nanowire stem.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.1-351.1
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• 2014

In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.253-253
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• 2011

ZnTe semiconductor is very attractive a material for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. The optoelectronic properties of ZnTe:O film allow to expect a large optical gain in the intermediate emission band, which emission band lies about 0.4-0.6 eV below the conduction band of ZnTe [2]. So, the ZnTe system is useful for the production of high-efficiency multi-junction solar cells [2,3]. In this work, the ZnTe:O thin films were deposited on Al2O3 substrates by using the radio frequency magnetron sputtering system. Three sets of samples were prepared using argon and oxygen as the sputtering gas. The deposition chamber was pre-pumped down to a base pressure of 10-7 Torr before introducing gas. The deposition pressure was fixed at 10-3 Torr throughout this work. During the ZnTe deposition, the substrate temperature was 300 oC. The optical properties were also investigated by using the ultraviolte-visible (UV-Vis) spectrophotometer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.4
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• pp.382-389
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• 1997

We present the results on the applicability of the polycrystalline AIN thin films for a surface acoustic wave filter operating at 800 MHz frequency. The films show the FWHM of 3 .deg. from th X-ray rocking curve, which indicates that the c-axis of the films is pre- ferentially oriented along the growth direction. The fabricated band pass filters exhibit the center frequency of 865 MHz with 3dB band-width of 45 MHz. From the measured frequency response, the electro-mechanical coupling constant of 0.8% and the SAW velocity of 5,709 m/s are obtained. Thus, we conclude that the sputtered AIN films are feasible for the fabrication of uper UHF band SAW filters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.199-202
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• 1996

This paper describes the thermally stimulated current (TSC) measurements of arachidic acid and polyamic acid alkylamine salt(PAAS) LB film, which is a precursor of polyimide(PI). The measurements were performed from room temperature to about 25$0^{\circ}C$ and the temperature was increased at a rate of 0.02 K/s linearly. It shows that peaks of TSC are observed at about 8$0^{\circ}C$ in the arachidic acid and about 8$0^{\circ}C$, 16$0^{\circ}C$ in the PAAS LB films. Results of these measurements indicate that one peak at 8$0^{\circ}C$ is resulted from alkyl group; the other peak at 16$0^{\circ}C$ is due to alkyl and C-O group of PAAS. Additional large peak at about 16$0^{\circ}C$ is due to dipole moments in the PAAS films. The DSC and TGA of PAAS, arachidic acid and octadesylamine are measured. Thermal imidization was performed at 30$0^{\circ}C$ far 1 hour by our pre study