RF 스퍼터링 법에 의한 ZnO 박막의 결정성과 기판의 냉각속도

The crystalline characteristics of ZnO deposited on various cooling rates by RF sputter

ZnO thin films were prepared by RF magnetron sputter deposition on p-Si(100) wafer with various cooling rates of substrate temperature such as the substrates were pre-heated to $400^{\circ}C$ before the deposition and then cooled down naturally or slowly to $300^{\circ}C$, $200^{\circ}C$, $100^{\circ}C$, and R.T., by the temperature controller during the deposition. The crystall me and micro-structural characteristics of the films were investigated by XRD and SEM ZnO films which cooled down naturally or slowly by temperature controller during deposition, especially the film were deposited with cooling down from $400^{\circ}C$ to $200^{\circ}C$ slowly, showed the most outstanding c-axis preferred orientation.