• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.199-202
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• 2003

We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with rubbing alignment method on two kinds of polyimide (PI) surfaces using thin plastic substrates. The generated NLC pretilt angles on the pre-imidized type PI are about $3.8^{\circ}$ by the rubbing alignment method with thin plastic substrates, However, the pretilt angle measured at about $2.8^{\circ}$ lower on the polyamic acid type PI than by pre-imidized type PI surface with thin polymer film. The tilt angle increases as increasing curring temperature for making polyimide layer using polyamic acid type PI. It was concluded that pretilt angle in the polyimide surface is attributable to the increasing of imide rato.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.50-54
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• 2018

In this study, a femtosecond laser pre-annealing technology based on indium zinc oxide (IZO) thin-film transistors (TFTs) was investigated. We demonstrated a stable pre-annealing process to analyze the change in the surface structures of thin-films, and we improved the electrical performance. Furthermore, static and dynamic electrical characteristics of IZO TFTs with n-channel inverters were observed. To investigate the static and dynamic responses of our solution-processed IZO TFTs, simple resistor-load-type inverters were fabricated by connecting a $1-M{\Omega}$ resistor. The femtosecond laser pre-annealing process based on IZO TFTs showed good performance: a field-effect mobility of $3.75cm_2/Vs$, an $I_{on}/I_{off}$ ratio of $1.8{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. Our IZO-TFT-based N-MOS inverter performed well at operating voltage, and therefore, is a good candidate for advanced logic circuits and display backplane.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.446-449
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• 2015

An improvement of light-extraction efficiency of organic light-emitting diodes was studied by using random-textured films (RTF). Device was made in a structure of RTF/glass/ITO/TPD/$Alq_3$/LiF/Al. RTF mold was made by spreading PDMS solution on a sandpaper. By pressing this mold on the glass substrate pre-coated with ZPU material, the RTF was obtained. From this study, there was an improvement of external quantum efficiency by about 30% in the device with the random-textured film (RTF 40) compared to that of the reference one.

• International Journal of Automotive Technology
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• v.5 no.3
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• pp.155-164
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• 2004

The direct injection gasoline spray-wall interaction was characterized inside a heated pressurized chamber using various visualization techniques, including high-speed laser-sheet macroscopic and microscopic movies up to 25,000 frames per second, shadowgraph, and double-spark particle image velocimetry. Two hollow cone high-pressure swirl injectors having different cone angles were used to inject gasoline onto a heated plate at two different impingement angles. Based on the visualization results, the overall transient spray impingement structure, fuel film formation, and preliminary droplet size and velocity were analyzed. The results show that upward spray vortex inside the spray is more obvious at elevated temperature condition, particularly for the wide-cone-angle injector, due to the vaporization of small droplets and decreased air density. Film build-up on the surface is clearly observed at both ambient and elevated temperature, especially for narrow cone spray. Vapor phase appears at both ambient and elevated temperature conditions, particularly in the toroidal vortex and impingement plume. More rapid impingement and faster horizontal spread after impingement are observed for elevated temperature conditions. Droplet rebounding and film break-up are clearly observed. Post-impingement droplets are significantly smaller than pre-impingement droplets with a more horizontal velocity component regardless of the wall temperature and impingement angle condition.

• The Journal of the Korea Contents Association
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• v.8 no.1
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• pp.386-397
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• 2008

The purpose of the study is to identify the characteristics of films to be exported into a larger market abroad, especially the Japanese film market which occupies more than a half of the export costs of the Korean movies. Our analysis shows that the factors such as the reputation of a director and actors in Japan, the box-office record in Korea and genres have influence upon the export to the Japanese market. Among genres, comedy movies were less exported, while melodramas was more. We expect that this result will be helpful when film producers plan movies for export from the stage of pre-production.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.514-518
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• 1999

Gold (Au) is not supposed to react with sapphire(single crystalline ) under thermodynamic equillibrium, therefore, a strong adhesion between these two dissimilar materials is not expected. However, pull test showed that the gold film sputter-deposited onto annealed and pre-sputtered sapphire exhibited very strong adhesion even without post-deposition annealing. Strongly and weakly adhered samples as a result of the pull testing were selected to investigate the adhesion mechanisms with Auger electron spectroscopy. The Au/ interfaces were analyzed using a new technique that probes the interface on the film using Auger electron escape depth. It revealed that one or two monolayers of Au-Al-O compound formed at the Au/Sapphire interface when AES in the UHV chamber. It showed that metallic aluminum was detected on the surface of sapphire substrates after irradiating for 3 min. with 7keV Ar+ -ions. These results agree with TRIM calculations that yield preferential ion-beam etching. It is concluded that the formation of Au-Al-O compound, which is responsible for the strong metal-ceramic bonding, is due to ion-induced cleaning and reduction of the sapphire surface, and the kinetic energy of depositing gold atoms, molecules, and micro-particles as a driving force for the inter-facial reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.395-397
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• 2002

Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.

• Journal of the Korean Electrochemical Society
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• v.10 no.3
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• pp.229-232
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• 2007

An amperometric immunosensor for the determination of rabbit IgG is proposed. The immunoassay utilizes a screen-printed carbon electrode on which osmium redox polymer is electrodeposited. This immunoassay detects 0.1 ng/ml of rabbit IgG, which is ${\sim}10^2$ fold higher than the most sensitive enzyme amplified amperometric immunoassay. The assay utilizes a screen-printed carbon electrode which was pre-coated by a co-electrodeposited film of an electron conducting redox hydrogel and a rabbit IgG. The rabbit IgG in the electron conducting film conjugates captures, when present, the anti-rabbit IgG. The captured anti-rabbit-IgG is labeled with horseradish peroxidase (HRP) which catalyzes the two-electron reduction of $H_2O_2$ to water. Because the redox hydrogel electrically connects HRP reaction centers to the electrode, completion of the sandwich converts the film from non-electrocatalytic to electro-catalytic for the reduction of $H_2O_2$ to $H_2O$ when the electrode is poised at 200 mV vs. Ag/AgCl.

• Journal of Surface Science and Engineering
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• v.53 no.3
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• pp.109-115
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• 2020

In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH₄/H₂), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.95-100
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• 2016

We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from $200^{\circ}C$ to $500^{\circ}C$ for a time period of 10 to 40 min. At ${\leq}300^{\circ}C$, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] $${\sim_=}$$ 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.