• Macromolecular Research
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• 제17권5호
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• pp.346-351
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• 2009

$TiCl(O-i-Pr)_3/SiO_2$ and $Ti(O-i-Pr)_4/SiO_2$ were prepared by immobilizing chlorotitanium (IV) isopropoxide ($TiCl(O-i-Pr)_3$) and titanium (IV) isopropoxide ($Ti(O-i-Pr)_4$), to pretreated silica. The effect of the polymerization reaction conditions on the catalytic activity and characteristics of the resulting PLA were investigated. The catalytic conversion, molecular weight and polydispersity index (PDI) of the PLA produced on the titanium alkoxide supported catalysts increased proportionally with the reaction temperature. When the PLA was synthesized in bulk polymerization, the PLA produced with the supported catalysts had higher molecular weight than those with homogeneous catalysts. The melting temperature of the polymer produced with silica supported alkoxide catalysts was approximately $170-180^{\circ}C$.

• 한국결정학회지
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• 제12권3호
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• pp.137-140
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• 2001

화합물 PdCl₂(PhC≡N)₂(1) 와 2.6-diisopropylaniline 이 반응하여 trans-[Pd(NH₂-C/sub 6/-H₃-2, 6-i-Pr₂)₂Cl₂] (2)가 합성하였다. 화합물 2의 구조가 분광학적 방법(¹H-NMR, /sup 13/C-NMR, IR) 및 X-ray 회절법으로 규명되었다. 화합물 2의 결정학 자료: 단사정계 공간군 P2₁/n, a=13.532(3)Å, b=5.749(1)Å, c=17.880(4)Å, β=103.84(2)°, Z=2, R(wR₂)=0.0466(0.1226).

• 대한화학회지
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• 제26권1호
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• pp.24-30
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• 1982

란탄족 화합물인 Ln$(fod)_3$ (Ln = Pr, Nd, Eu 및 Yb)를 사용하여 contact-only (COM) 및 dipolar-only (DOM) 2성분계 혼합물을 만든 후 기질인 4-picoline의 $F_i$ 및 $G_i$값을 핵자기공명 이동으로 부터 측정하였다. 그 결과 Pr$(fod)_3$ 및 Eu$(fod)_3$의 혼합물인 COM 1 및 DOM 1으로 얻은 값들을 단일 Ln$(fod)_3$로 얻은 값들과 잘 일치하였다. 그러나 $(fod)_3$ 및 Yb$(fod)_3$의 혼합물인 COM 2 및 DOM 2로 얻을 값들을 단일 Ln$(fod)_3$로 얻은 값들과 상당한 오차를 나타내었다. 그 오차는 이테르븀(Yb) 착물에 기인하는 것으로 추정되었다.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.411-414
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• 2008

The germanium films were deposited by metal organic chemical vapor deposition using $Ge(allyl)_4$ precursors on TiAlN substrates. Deposition of germanium films was only possible with a presence of $Sb(iPr)_3$, which means that $Sb(iPr)_3$ takes a catalytic role by a thermal decomposition of $Sb(iPr)_3$ for Ge film deposition. Also, as Sb bubbler temperature increases, deposition rate of the Ge films increases at a substrate temperature of $370^{\circ}C$. The GeTe thin films were fabricated by MOCVD with $Te(tBu)_2$ on Ge thin film. The GeTe films were grown by the tellurium deposition at $230-250^{\circ}C$ on Ge films deposited on TiAlN electrode in the presence of Sb at $370^{\circ}C$. The GeTe film growth on Ge films depends on the both the tellurium deposition temperature and deposition time. Also, using $Sb(iPr)_3$ precursor, GeSbTe films with hexagonal structures were fabricated on GeTe thin films. GeSbTe films were deposited in trench structure with 200 nm*120 nm small size.

• Bulletin of the Korean Chemical Society
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• 제18권2호
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• pp.213-217
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• 1997

Magnesium reduction of Mo(N-C6H3-2,6-i-Pr2)2Cl2(DME) in the presence of trimethylphosphine led to a mixture of Mo(N-C6H3-2,6-i-Pr2)(PMe3)2Cl3, 1, and Mo2(PMe3)4Cl4, 2. In solution 1 is slowly air-oxidized to Mo(N-2,6-i-Pr2-C6H3)(OPMe3)(PMe3)Cl3, 3. 1 is chemically inert to carbon nucleophiles (ZnMe2, ZnEt2, AlMe3, AlEt3, LiCp, NaCp, TlCp, NaCp*, MeMgBr, EtMgBr), oxygen nucleophiles (LiOEt, LiO-i-Pr, LiOPh, LiOSPh), and hydrides (LiBEt3H, LiBEt3D). Crystal data for 1: orthorhombic space group P212121, a=11.312(3) Å, b=11.908(3) Å, c=19.381(6) Å, Z=4, R(wR2)=0.0463 (0.1067). Crystal data for 2: monoclinic space group Cc, a=18.384(3) Å, b=9.181(2) Å, c=19.118(3) Å, b=124.98(1)°, Z=4, R(wR2)=0.0228 (0.0568). Crystal data for 3: orthorhombic space group P212121, a=11.464(1) Å, b=14.081(2) Å, c=16.614(3) Å, Z=4, R(wR2)=0.0394 (0.0923).

• Biomolecules & Therapeutics
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• 제16권3호
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• pp.237-242
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• 2008

The effect of Picrorrhiza Rhizoma (PR) aqueous extracts were evaluated on 2,4-dinitrofluorobenzene (DNFB)-induced contact dermatitis, type I allergic model. Contact dermatitis was induced by sensitization with dinitrophenyl-derivatized ovalbumin (DNP-OVA) and DNFB challenge as antigen. Three different concentrations of PR extracts (300,150 and 75mg/kg) were orally administered to DNP-OVA sensitization mice once a day for 7 days with reference materials; dexamethasone (15mg/kg, intraperitoneal treatment). End of 7 days oral administration of PR extracts or intraperitoneal treatment of dexamethasone, the changes on the edematous changes and scratching behavior were measured. Immediate after DNFB challenge on ear or paw of DNP-OVA sensitized mice, increases of ear and paw thicknesses and weights were detected with anterior ear skin (dermis to epidermis) thickness and paw scratching behavior increases. However, these DNFB-induced increases on ear and paw thicknesses, weights and scratching behaviors were decreased by treatment of all three different dosages of PR extracts and dexamethasone, respectively. In addition, the increases of anterior skin thicknesses were also dramatically inhibited by treatment of all three different dosages of PR extracts and dexamethasone at histopathological observations. The results obtained in this study suggest that oral treatment of PR extracts also has relatively favorable effects on allergic dermatitis.

• Korean Journal of Mathematics
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• 제18권4호
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• pp.335-342
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• 2010

Let D be an integral domain with quotient field K,$\mathcal{I}(D)$ be the set of nonzero ideals of D, and $w$ be the star-operation on D defined by $I_w=\{x{\in}K{\mid}xJ{\subseteq}I$ for some $J{\in}\mathcal{I}(D)$ such that J is finitely generated and $J^{-1}=D\}$. The D is called a Pr$\ddot{u}$fer $v$-multiplication domain if $(II^{-1})_w=D$ for all nonzero finitely generated ideals I of D. In this paper, we show that D is a Pr$\ddot{u}$fer $v$-multiplication domain if and only if $(A{\cap}(B+C))_w=((A{\cap}B)+(A{\cap}C))_w$ for all $A,B,C{\in}\mathcal{I}(D)$, if and only if $(A(B{\cap}C))_w=(AB{\cap}AC)_w$ for all $A,B,C{\in}\mathcal{I}(D)$, if and only if $((A+B)(A{\cap}B))_w=(AB)_w$ for all $A,B{\in}\mathcal{I}(D)$, if and only if $((A+B):C)_w=((A:C)+(B:C))_w$ for all $A,B,C{\in}\mathcal{I}(D)$ with C finitely generated, if and only if $((a:b)+(b:a))_w=D$ for all nonzero $a,b{\in}D$, if and only if $(A:(B{\cap}C))_w=((A:B)+(A:C))_w$ for all $A,B,C{\in}\mathcal{I}(D)$ with B, C finitely generated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.426-426
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• 2012

본 연구에서는 GaAs p-i-n 접합 구조에 InAs 양자점을 삽입한 양자점 태양전지(Quantum Dot Solar Cell; QDSC)의 내부 전기장(internal electric field)을 조사하기 위하여 Photoreflectance (PR) 방법을 이용하였다. QDSC 구조는 GaAs p-i-n 구조의 공핍층 내에 8주기의 InAs 양자점 층을 삽입하였으며 각 양자점 층은 40 nm 두께의 i-GaAs로 분리하였다. InAs/GaAs QDSC는 분자선박막 성장장치(molecular beam epitaxy; MBE)를 이용하여 성장하였다. 이 때 양자점의 형성은 InAs 2.0 ML(monolayer)를 기판온도 $470^{\circ}C$에서 증착하였다. QDSC 구조에서 여기광원의 세기에 따른 전기장의 변화를 조사하였다. 아울러 양자점 층 사이의 i-GaAs 층 내에 6.0 nm의 AlGaAs 퍼텐셜 장벽(potential barrier)을 삽입하여 퍼텐셜 장벽 유무에 따른 전기장 변화를 조사하였다. PR 측정에서 여기광원으로는 633 nm의 He-Ne 레이저를 이용하였으며 여기광의 세기는 $2mW/cm^2$에서 $90mW/cm^2$까지 변화를 주어 여기광세기 의존성실험을 수행하였다. 여기광의 세기가 증가할수록 photovoltaic effect에 의한 내부 전기장의 변화를 관측할 수 있었다. PR 결과로부터 p-i-n 구조의 p-i 영역과 i-n 접합 계면의 junction field를 검출하였다. p-i-n의 i-영역에 양자점을 삽입한 경우 PR 신호에서 Franz-Keldysh oscillation (FKO)의 주파수가 p-i-n 구조와 비교하여 변조됨을 관측하였다. 이러한 FKO 주파수성분은 fast Fourier transform (FFT)을 이용하여 검출하였다. FKO의 주파수 성분들은 고전기장하에서 electron-heavyhole (e-hh)과 electron-lighthole (e-lh) 전이에 의해 나타나는 성분으로 확인되었다.

• Journal of Veterinary Science
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• 제22권2호
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• pp.23.1-23.10
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• 2021

Background: Pseudorabies (PR), caused by the pseudorabies virus (PRV), is an endemic disease in some regions of China. Although there are many reports on epidemiological investigations into pseudorabies, information on PRV gI antibody dynamics in one pig farm is sparse. Objectives: To diagnose PR and analyze the course of PR eradication in one pig farm. Methods: Ten brains and 1,513 serum samples from different groups of pigs in a pig farm were collected to detect PRV gE gene and PRV gI antibody presence using real-time polymerase chain reaction and enzyme-linked immunosorbent assay, respectively. Results: The July 2015 results indicated that almost all brain samples were PRV gE gene positive, but PRV gI antibody results in the serum samples of the same piglets were all negative. In the boar herd, from October 2015 to July 2018 three positive individuals were culled in October 2015, and the negative status of the remaining boars was maintained in the following tests. In the sow herd, the PRV gI antibody positive rate was always more than 70% from October 2015 to October 2017; however, it decreased to 27% in January 2018 but increased to 40% and 52% in April and July 2018, respectively. The PRV gI antibody positive rate in 100-day pigs markedly decreased in October 2016 and was maintained at less than 30% in the following tests. For 150-day pigs, the PRV gI antibody positive rate decreased notably to 10% in April 2017 and maintained a negative status from July 2017. The positive trend of PRV gI antibody with an increase in pig age remarkably decreased in three tests in 2018. Conclusions: The results indicate that serological testing is not sensitive in the early stage of a PRV infection and that gilt introduction is a risk factor for a PRV-negative pig farm. The data on PRV gI antibody dynamics can provide reference information for pig farms wanting to eradicate PR.

• E2M - 전기 전자와 첨단 소재
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• 제7권4호
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• pp.300-305
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• 1994

We determined the alloy composition of the liquid-phase epitaxy(LPE) grown $Al_{x}$G $a_{1-x}$ As by the photoreflectance(PR), and observed the variation of PR signal by changing the condition of annealing and thickness of epilayer. As the measuring temperature was decreased, the broadening parameter was decreased, and the amplitude of PR signal was increased. When the temperature of annealing was increased, the surface carrier concentration was decreased and then the shape and amplitude of PR signal were affected by the surface electric field. The structure change was observed when the specimen was annealed for long time at a high temperature. We found that the surface electric field increased when the thickness of epilayer was decreased by etching, because the band bending was increased by the decreased of the width of depletion layer....