Photoreflectance of A $I_x$Ga${1-x}$As(x.<=.0.15) grown by liquid-phase epitaxy

Liquid-phase epitaxy로 성장시킨 A $I_x$Ga${1-x}$As(x.<=.0.15)의 photoreflectance

We determined the alloy composition of the liquid-phase epitaxy(LPE) grown $Al_{x}$G $a_{1-x}$ As by the photoreflectance(PR), and observed the variation of PR signal by changing the condition of annealing and thickness of epilayer. As the measuring temperature was decreased, the broadening parameter was decreased, and the amplitude of PR signal was increased. When the temperature of annealing was increased, the surface carrier concentration was decreased and then the shape and amplitude of PR signal were affected by the surface electric field. The structure change was observed when the specimen was annealed for long time at a high temperature. We found that the surface electric field increased when the thickness of epilayer was decreased by etching, because the band bending was increased by the decreased of the width of depletion layer....