• Title/Summary/Keyword: Power light emitting diodes(LED)

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Reliability Assessment Criteria of Power Light Emitting Diodes for Lighting fittings (조명용 Power LED의 신뢰성평가기준)

  • Park, Chang-Kyu;Jeong, Hee-Suk;Jeong, Hai-Sung;Baik, Jai-Wook
    • Journal of Applied Reliability
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    • v.9 no.3
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    • pp.219-231
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    • 2009
  • Power light emitting diodes(LED) for lighting fittings are so much environment-friendly, highly reliable and consume less energy that they are widely used at home and in industries such as electronics, telecommunications and industrial machineries. However, they are exposed to a very diverse environment and consists of complex components and, therefore needs careful approach to the enhancement and assessment of reliability of the item. In this article reliability assessment criteria for LED are established in terms of performance assessment test, reliability assessment test and accelerated test.

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Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

  • Mustary, Mumta Hena;Ryu, Beo Deul;Han, Min;Yang, Jong Han;Lysak, Volodymyr V.;Hong, Chang-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.4
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    • pp.454-461
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    • 2015
  • Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

Effect of Color of Light Emitting Diode on Development of Fruit Body in Hypsizygus marmoreus

  • Jang, Myoung-Jun;Lee, Yun-Hae;Ju, Young-Cheol;Kim, Seong-Min;Koo, Han-Mo
    • Mycobiology
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    • v.41 no.1
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    • pp.63-66
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    • 2013
  • This study was conducted to identify a suitable color of light for development of the fruit body in Hypsizygus marmoreus. To accomplish this, samples were irradiated with blue (475 nm), green (525 nm), yellow (590 nm), or red (660 nm) light emitting diodes (LEDs) to induce the formation of fruiting bodies after mycelia growth. The diameter and thickness of the pileus and length of stipes in samples subjected to blue LED treatment were similar to those of subjected to fluorescent light (control), and the lengths of the stipes were highest in response to treatment with the red LED and darkness. The commercial yields of plants subjected to blue and green LED treatment were similar to those of the control. In conclusion, cultivation of H. marmoreus coupled with exposure to blue LED is useful for inducing high quality fruit bodies as well as higher levels of ergosterol, DPPH radical scavenging activity, total polyphenol content and reducing power.

Effects of Carrier Leakage on Photoluminescence Properties of GaN-based Light-emitting Diodes at Room Temperature

  • Kim, Jongseok;Kim, Seungtaek;Kim, HyungTae;Choi, Won-Jin;Jung, Hyundon
    • Current Optics and Photonics
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    • v.3 no.2
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    • pp.164-171
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    • 2019
  • Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure

  • Bae, Sung-Bum;Kim, Sung-Bok;Kim, Dong-Churl;Nam, Eun Soo;Lim, Sung-Mook;Son, Jeong-Hwan;Jo, Yi-Sang
    • ETRI Journal
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    • v.35 no.4
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    • pp.566-570
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    • 2013
  • In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.

Acceleration Test for Package of High Power Phosphor Converted White Light Emitting Diodes (고출력 형광체변환 백색 LED 패키지의 가속시험)

  • Chan, Sung-Il;Yu, Yang-Gi;Jang, Joong-Soon
    • Journal of Applied Reliability
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    • v.10 no.2
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    • pp.137-148
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    • 2010
  • This study deals with the accelerated life test of high power phosphor converted white Light Emitting Diodes (High power LEDs). Samples were aged at $110^{\circ}C$/85% RH and $130^{\circ}C$/85% RH up to 900 hours under non-biased condition. The stress induced a luminous flux decay on LEDs in all the conditions. Aged devices exhibited modification of package silicon color from white to yellowish brown. The instability of the package contributes to the overall degradation of optical lens and structural degradations such as generating bubbles. The degradation mechanisms of lumen decay and reduction of spectrum intensity were ascribed to hygro-mechanical stress which results in package instabilities.

Effect of Fabricating Nanopatterns on GaN-Based Light Emitting Diodes by a New Way of Nanosphere Lithography

  • Johra, Fatima Tuz;Jung, Woo-Gwang
    • Korean Journal of Materials Research
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    • v.23 no.3
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    • pp.177-182
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    • 2013
  • Nanosphere lithography is an inexpensive, simple, high-throughput nanofabrication process. NSL can be done in different ways, such as drop coating, spin coating or by means of tilted evaporation. Nitride-based light-emitting diodes (LEDs) are applied in different places, such as liquid crystal displays and traffic signals. The characteristics of gallium nitride (GaN)-based LEDs can be enhanced by fabricating nanopatterns on the top surface of the LEDs. In this work, we created differently sized (420, 320 and 140 nm) nanopatterns on the upper surfaces of GaN-based LEDs using a modified nanosphere lithography technique. This technique is quite different from conventional NSL. The characterization of the patterned GaN-based LEDs revealed a dependence on the size of the holes in the pattern created on the LED surface. The depths of the patterns were 80 nm as confirmed by AFM. Both the photoluminescence and electroluminescence intensities of the patterned LEDs were found to increase with an increase in the size of holes in the pattern. The light output power of the 420-nm hole-patterned LED was 1.16 times higher than that of a conventional LED. Moreover, the current-voltage characteristics were improved with the fabrication of differently sized patterns over the LED surface using the proposed nanosphere lithography method.

Control of Heat Temperature in Light Emitting Diodes with Thermoelectric Device (열전소자를 이용한 발광다이오드의 발열 온도 제어)

  • Han, S.H.;Kim, Y.J.;Kim, J.H.;Kim, D.J.;Jung, J.Y.;Kim, S.;Cho, G.S.
    • Journal of the Korean Vacuum Society
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    • v.20 no.4
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    • pp.280-287
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    • 2011
  • The heat temperature of a light emitting diode (LED) is investigated with the thermoelectric device (TED). The Peltier effect of the thermoelectric device is used to control the heat radiation and the junction temperature of high-power LEDs. For the typical specific current (350 mA) of high-power (1 W) LEDs, the LED temperature and the p-n junction temperature become $64.5^{\circ}C$ and $79.1^{\circ}C$, respectively. For 0.1~0.2 W driving power of TED, the LED temperature and the junction temperature are reduced to be $54.2^{\circ}C$ and $68.9^{\circ}C$, respectively. As the driving power of the TED increases over 0.2 W, the temperature of LED itself and the junction temperature are increased due to the heat reversed from the heat-sink to LED. As the difference of temperature between LED and the heat-sink is increased, the quantity of reversed heat becomes larger and it results to degrade the cooling capability of TED.

A Study on the Lighting Component of Marine Lattern using Light Emitting Diodes (중.소형 해상용 등명기 대체용 LED 광원 설계에 대한 연구)

  • Jeong, Hak-Geun;Jung, Bong-Man;Han, Soo-Bin;Park, Suk-In;Kim, Hoon
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.1
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    • pp.1-6
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    • 2006
  • The advantages of LED(Light Emitting Diode) are low electric power consumption long life time and excellent visibility. In order to design and develope the marine lantern using LED, technical trends and standards about the marine lantern were analyzed and sample products were manufactured and evaluated in comparing with existing marine lantern The performance of developed LED lantern is better than that of the existing marine lantern using an incandescent lamp. The electric power consumption of our products is 30[%] and the luminous intensity is two or fen times brighter than existing marine lantern.

Dimming Control of LED Light Using Pulse Frequency Modulation in Visible Light Communication

  • Lee, Seong-Ho
    • Journal of information and communication convergence engineering
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    • v.19 no.4
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    • pp.269-275
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    • 2021
  • Light-emitting diodes (LEDs) are modulated using a square wave pulse sequence for flicker prevention and dimming control in visible light communication (VLC). In a VLC transmitter, the high and low bits of the non-return-to-zero (NRZ) data are converted to two square waves of different frequencies, which continue for a finite time defined by the fill ratio in an NRZ bit time. As the average optical power was kept constant and independent of data transmission, the LED was flicker-free. Dimming control is carried out by changing the fill ratio of the square wave in the NRZ bit time. In the experiments, the illumination of the LED light was controlled in the range of approximately 19.2% to 96.2% of the continuous square wave modulated LED light. In the VLC receiver, a high-pass filter combined with a latch circuit was used to recover the transmitted signal while preventing noise interference from adjacent lighting lamps.