• 제목/요약/키워드: Power light emitting diodes(LED)

검색결과 87건 처리시간 0.023초

조명용 Power LED의 신뢰성평가기준 (Reliability Assessment Criteria of Power Light Emitting Diodes for Lighting fittings)

  • 박창규;정희석;정해성;백재욱
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제9권3호
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    • pp.219-231
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    • 2009
  • Power light emitting diodes(LED) for lighting fittings are so much environment-friendly, highly reliable and consume less energy that they are widely used at home and in industries such as electronics, telecommunications and industrial machineries. However, they are exposed to a very diverse environment and consists of complex components and, therefore needs careful approach to the enhancement and assessment of reliability of the item. In this article reliability assessment criteria for LED are established in terms of performance assessment test, reliability assessment test and accelerated test.

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Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

  • Mustary, Mumta Hena;Ryu, Beo Deul;Han, Min;Yang, Jong Han;Lysak, Volodymyr V.;Hong, Chang-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권4호
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    • pp.454-461
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    • 2015
  • Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

Effect of Color of Light Emitting Diode on Development of Fruit Body in Hypsizygus marmoreus

  • Jang, Myoung-Jun;Lee, Yun-Hae;Ju, Young-Cheol;Kim, Seong-Min;Koo, Han-Mo
    • Mycobiology
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    • 제41권1호
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    • pp.63-66
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    • 2013
  • This study was conducted to identify a suitable color of light for development of the fruit body in Hypsizygus marmoreus. To accomplish this, samples were irradiated with blue (475 nm), green (525 nm), yellow (590 nm), or red (660 nm) light emitting diodes (LEDs) to induce the formation of fruiting bodies after mycelia growth. The diameter and thickness of the pileus and length of stipes in samples subjected to blue LED treatment were similar to those of subjected to fluorescent light (control), and the lengths of the stipes were highest in response to treatment with the red LED and darkness. The commercial yields of plants subjected to blue and green LED treatment were similar to those of the control. In conclusion, cultivation of H. marmoreus coupled with exposure to blue LED is useful for inducing high quality fruit bodies as well as higher levels of ergosterol, DPPH radical scavenging activity, total polyphenol content and reducing power.

Effects of Carrier Leakage on Photoluminescence Properties of GaN-based Light-emitting Diodes at Room Temperature

  • Kim, Jongseok;Kim, Seungtaek;Kim, HyungTae;Choi, Won-Jin;Jung, Hyundon
    • Current Optics and Photonics
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    • 제3권2호
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    • pp.164-171
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    • 2019
  • Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure

  • Bae, Sung-Bum;Kim, Sung-Bok;Kim, Dong-Churl;Nam, Eun Soo;Lim, Sung-Mook;Son, Jeong-Hwan;Jo, Yi-Sang
    • ETRI Journal
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    • 제35권4호
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    • pp.566-570
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    • 2013
  • In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.

고출력 형광체변환 백색 LED 패키지의 가속시험 (Acceleration Test for Package of High Power Phosphor Converted White Light Emitting Diodes)

  • 천성일;윤양기;장중순
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제10권2호
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    • pp.137-148
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    • 2010
  • This study deals with the accelerated life test of high power phosphor converted white Light Emitting Diodes (High power LEDs). Samples were aged at $110^{\circ}C$/85% RH and $130^{\circ}C$/85% RH up to 900 hours under non-biased condition. The stress induced a luminous flux decay on LEDs in all the conditions. Aged devices exhibited modification of package silicon color from white to yellowish brown. The instability of the package contributes to the overall degradation of optical lens and structural degradations such as generating bubbles. The degradation mechanisms of lumen decay and reduction of spectrum intensity were ascribed to hygro-mechanical stress which results in package instabilities.

Effect of Fabricating Nanopatterns on GaN-Based Light Emitting Diodes by a New Way of Nanosphere Lithography

  • Johra, Fatima Tuz;Jung, Woo-Gwang
    • 한국재료학회지
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    • 제23권3호
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    • pp.177-182
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    • 2013
  • Nanosphere lithography is an inexpensive, simple, high-throughput nanofabrication process. NSL can be done in different ways, such as drop coating, spin coating or by means of tilted evaporation. Nitride-based light-emitting diodes (LEDs) are applied in different places, such as liquid crystal displays and traffic signals. The characteristics of gallium nitride (GaN)-based LEDs can be enhanced by fabricating nanopatterns on the top surface of the LEDs. In this work, we created differently sized (420, 320 and 140 nm) nanopatterns on the upper surfaces of GaN-based LEDs using a modified nanosphere lithography technique. This technique is quite different from conventional NSL. The characterization of the patterned GaN-based LEDs revealed a dependence on the size of the holes in the pattern created on the LED surface. The depths of the patterns were 80 nm as confirmed by AFM. Both the photoluminescence and electroluminescence intensities of the patterned LEDs were found to increase with an increase in the size of holes in the pattern. The light output power of the 420-nm hole-patterned LED was 1.16 times higher than that of a conventional LED. Moreover, the current-voltage characteristics were improved with the fabrication of differently sized patterns over the LED surface using the proposed nanosphere lithography method.

열전소자를 이용한 발광다이오드의 발열 온도 제어 (Control of Heat Temperature in Light Emitting Diodes with Thermoelectric Device)

  • 한상호;김윤중;김정현;김동준;정종윤;김성인;조광섭
    • 한국진공학회지
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    • 제20권4호
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    • pp.280-287
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    • 2011
  • 열전소자를 사용하여 발광다이오드의 방열효과를 조사하였다. 열전소자의 냉각기능인 펠티에 효과(Peltier effect)를 이용하여, 고전력 발광다이오드의 방열과 p-n접합부의 온도를 제어하였다. 정격전류(350 mA)에 대한 고전력(1 W급) 발광다이오드(Light Emitting Diodes: LEDs)의 온도와 p-n접합부 온도는 각각 $64.5^{\circ}C$$79.1^{\circ}C$이다. 열전소자의 입력 전력 0.1~0.2 W에 대하여, LED의 온도와 접합부 온도는 각각 $54.2^{\circ}C$$68.9^{\circ}C$로 낮아진다. 열전소자에 입력 전력을 0.2 W 이상으로 증가할수록, LED의 온도와 접합부의 온도가 상승한다. 이는 열전소자에 의하여 흡수된 열이 LED로 역류하기 때문이다. 따라서 열전 소자의 냉각기능을 유지하기 위하는 열의 역류를 제어하여야 하며, 열의 역류는 LED의 온도와 방열장치의 온도 차가 클수록 커진다.

중.소형 해상용 등명기 대체용 LED 광원 설계에 대한 연구 (A Study on the Lighting Component of Marine Lattern using Light Emitting Diodes)

  • 정학근;정봉만;한수빈;박석인;김훈
    • 조명전기설비학회논문지
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    • 제20권1호
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    • pp.1-6
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    • 2006
  • 반도체 광원(LED소자)을 이용한 새로운 해상용 등명기의 경우 기존의 해상용 등명기와는 발광 원리 및 발광 방식이 다르며, LED는 반도체 소자로서 외기 환경(온도)의 변화에 따른 그 특성이 변화하는 문제점을 내포하고 있어, 본 논문에서는 우리나라의 계절적 변화에 적응되고, 해양 환경 특성에 적합한 LED 등명기를 개발하여 현재 사용중인 등명기의 문제점을 해소하고 품질 개선, 시인효과 및 신뢰성 향상으로 이용자에게 양질의 서비스를 제공하고 선박의 안전운항에 기여하고자 하였다. 이를 위하여 기존 전구식 등명기의 기술기준, 고휘도 LED 광원을 이용한 고광도 등명기 광원 선계, 및 고휘도 LED 등명기의 실효광도 및 색도의 측정 분석시험에 대해 연구를 수행하였다.

Dimming Control of LED Light Using Pulse Frequency Modulation in Visible Light Communication

  • Lee, Seong-Ho
    • Journal of information and communication convergence engineering
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    • 제19권4호
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    • pp.269-275
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    • 2021
  • Light-emitting diodes (LEDs) are modulated using a square wave pulse sequence for flicker prevention and dimming control in visible light communication (VLC). In a VLC transmitter, the high and low bits of the non-return-to-zero (NRZ) data are converted to two square waves of different frequencies, which continue for a finite time defined by the fill ratio in an NRZ bit time. As the average optical power was kept constant and independent of data transmission, the LED was flicker-free. Dimming control is carried out by changing the fill ratio of the square wave in the NRZ bit time. In the experiments, the illumination of the LED light was controlled in the range of approximately 19.2% to 96.2% of the continuous square wave modulated LED light. In the VLC receiver, a high-pass filter combined with a latch circuit was used to recover the transmitted signal while preventing noise interference from adjacent lighting lamps.