• 한국컴퓨터정보학회논문지
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• 제8권3호
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• pp.163-169
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• 2003

본 연구에서 개발하고자 하는 기기의 모델은 마이크로 컨트롤을 이용하여 모터속도를 제어 할 수 있는 출력 전자 변속기로써, 자동제어 방식을 사용하여 Switching frequency를 1,000MHz까지 가능한 형태로 변환하는 자동 변속장치이다. 연속출력전류는 5A, 11A, 18A, 25A, 35A, 50A이며, 사용되는 전압은 9V에서 최대 18V까지 가능하도록 설계하였다. Micro-controller 의 software와 hardware의 블록 다아이그램을 고안하였으며, 전력손실을 막기 위해 자동적으로 3.7V에서 Auto Cut-Off기능이 있도록 구성하였다.

• 동력기계공학회지
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• 제10권4호
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• pp.181-186
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• 2006

In this paper, a noncontact type torque meter using silicone rubber to measure the exact torque value and reduce a vibration and a noise, was developed. When planetary gear speed reducer runs, torque, RPM etc.. of motor change according to load or speed change. So, it needs a device to detect load's change or to diagnose the state of thewhole drive department by monitoring these result values. The noncontact type torque meter using silicone rubber that we're trying to develop this time is low-cost and can measure RPM and torque value simply. Also, it caculate a power using this value and indicate them on screen.

• 공학기술논문지
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• 제10권2호
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• pp.203-208
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• 2017

Due to global climate change issues, there is a growing demand for systems throughout the industry. In the case of power conversion, studies have been actively conducted to change the structure of the power conversion circuit and to apply new power devices. In particular, the WBG (Wide Band Gap), which is newly emerged device in the market for developing semiconductor technology, has demonstrated advantages in applying for various aspects in comparison to the existing Si (Silicon) Semiconductor. Recent research centers in the railway industry are focusing on developing technologies suitable for railway vehicles by utilizing these new developments in railway countries such as Japan and Europe. This paper researches the WBG device that is applicable to the auxiliary power supplies (APS) in railway system, and analyzes the downsizing effects to APS in high-speed railway by conducting a theoretical analysis and simulation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1335-1336
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• 2007

Among the emerging non-volatile memory technologies, phase change memories are the most attractive in terms of both performance and scalability perspectives. Phase-change random access memory(PRAM), compare with flash memory technologies, has advantages of high density, low cost, low consumption energy and fast response speed. However, PRAM device has disadvantages of set operation speed and reset operation power consumption. In this paper, we investigated scalability of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material to improve its properties. As a result, reduction of phase change region have improved electrical properties of PRAM device.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제51권8호
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• pp.467-474
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• 2002

In this paper, a wind power simulator is designed and implemented. To realize the torque of wind blade, a DC motor is used as a variable torque input device. An induction machine is used as a generator of which speed is controlled to maintain the optimal tip speed ratio during wind speed change. Input torque of system is controlled by armature current of DC motor and speed is controlled by generator control unit using field oriented control algorithm. Various control algorithms such as MPPT, soft start up, the simulator reactive power control, can be developed and tested using the simulator.

• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.291-294
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• 2013

When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1426-1427
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• 2006

Chalcogenide based phase-change memory has a high capability and potential for the next generation nonvolatile memory device. Fast writing speed, low writing voltage, high sensing margin, low power consume and long cycle of read/write repeatability are also good advantages of nonvolatile phase-change memory. We have been investigated the new material for the phase-change memory. Its composition is consists of chalcogenide $Ge_{1}Se_{1}Te_2$ material. We made this new material to solve problems of conventional phase-change memory which has disadvantage of high power consume and high writing voltage. In the present work, we are manufactured $Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}$ and $Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}$ sandwich triple layer structure devices are manufactured to investigate its electrical properties. Through the present work, we are willing to ensure a potential of substitutional method to overcome a crystallization problem on PRAM device.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.918-922
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• 2006

Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.

• 한국기계가공학회지
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• 제16권6호
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• pp.69-74
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• 2017

In the current machining industry, machining precision is necessary and machining is being carried out. In this ultra-precision machining industry, the fixation of the workpiece is very important and the degree of machining depends on the degree of fixation of the workpiece. In ultra-precision machining, various methods, such as using a vise chuck or the like and using bolt nut coupling, are used for fixing a workpiece to an existing machine tool. In particular, when the precision gripping force of the jig is insufficient during machining of the ultra-precision mold parts, the machining material shakes due to the vibration or friction, and the machining precision is lowered. In the ultra-precision machining of power transmission parts, such as gears, the accuracy of the product is then determined. In addition, the amount of heat generated during machining has a significant effect on the machining accuracy. This is because the vibration value changes according to the grasp force of the jig that fixes the workpiece, and the change in the calorific value due to the change in the main shaft rotation speed of the ultra-precision machining. The increase in the spindle rotation speed during machining decreased the heat generation during machining, and the machining accuracy was also good, and it was confirmed that the machining heat changed according to the fixed state of the workpiece and the machining accuracy also changed. In this study, we try to optimize the driving part of the power vise by using structural analysis, rather than the power vise, using the basic mechanical-type power unit.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.235-239
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• 2002

Combined generation system of photovoltaic and wind power is required backup system that such as a storage battery to supply energy, when not enough photovoltaic and wind power source for power supply equally and continually, because the energy source is changeable and stable through change of weather as irradiation, temperature, wind speed, wind speed, wind direction, seasons, etc..