Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Electrical characteristic for Phase-change Random Access Memory according to the $Ge_{1}Se_{1}Te_{2}$ thin film of cell structure

상변화 메모리 응용을 위한 $Ge_{1}Se_{1}Te_{2}$ 박막의 셀 구조에 따른 전기적 특성

  • Na, Min-Seok (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lim, Dong-Kyu (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Kim, Jae-Hoon (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Choi, Hyuk (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)
  • 나민석 (광운대학교 전자재료공학과) ;
  • 임동규 (광운대학교 전자재료공학과) ;
  • 김재훈 (광운대학교 전자재료공학과) ;
  • 최혁 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2007.07.18
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Abstract

Among the emerging non-volatile memory technologies, phase change memories are the most attractive in terms of both performance and scalability perspectives. Phase-change random access memory(PRAM), compare with flash memory technologies, has advantages of high density, low cost, low consumption energy and fast response speed. However, PRAM device has disadvantages of set operation speed and reset operation power consumption. In this paper, we investigated scalability of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material to improve its properties. As a result, reduction of phase change region have improved electrical properties of PRAM device.

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