• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.1
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• pp.51-56
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• 1981

A new I2L process for a high performance I2L structure is proposed. The modifiedstructure consists of a heavily doped extrinsic base and lowly doped intrinsic base where the collector regions are self-alignment with the intrinsic base regions. The proposed process untilizes spin-on sources as the diffusion sources and the self-alignment of collectors is achieved by using the hardened spin-on source as a diffusion mask. Test devices including a 13-stage ring oscillator have been fabricated by the proposed process on n/n+ silicon wafers with 6.5$\mu$m epitaxial layer. The maximum upward current gain of npn transistors is 8 for a three collector I2L cell. The speed-power product and minimum propagation delay for a one collector structure are 3.5 pJ and 50 ns, respectively.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.5
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• pp.539-543
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• 2012

Cellulose Electro-Active Paper (EAPap) is attractive as a biomimetic actuator because of its merits: it is lightweight, operates in dry conditions, has a large displacement output, has a low actuation voltage, and has low power consumption. Cellulose is regenerated so as to align its microfibrils, which results in a piezoelectric paper. When chemically bonded and mixed with carbon nanotubes, titanium oxide, zinc oxide, tin oxides, the cellulose EAPap can be used as a hybrid nanocomposite that has versatile properties and that can meet the requirements of many application devices. This paper presents trends in recent research on the cellulose EAPap, mainly on material preparation and its use in devices, including biosensors, chemical sensors, flexible transistors, and actuators. This paper also explains wirelessly driving technology for the cellulose EAPap, which is attractive for use in biomimetic robotics and micro-aerial vehicles.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.46-53
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• 2003

This paper describes a new linear operational transconductance amplifier (OTA) and its application to the 9th-order Bessel filter. To improve the linearity of the OTA, we employ a mobility compensation technique. The combination of the triode and the subthreshold region transistors can compensate the mobility reduction effect and make the OTA with a good linearity. The proposed OTA shows $\pm$0.32% Gm variation over the input range of $\pm$0.8-V. The total harmonic distortion (THD) was lower than -60-㏈. The 9th-order Bessel filter has been designed using a 0.35-${\mu}{\textrm}{m}$ n-well CMOS process under 3.3-V supply voltage. It shows the cutoff frequency of 8-MHz and the power consumption of 65-mW.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.89-95
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• 2003

In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.4
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• pp.86-90
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• 2007

An efficient sensing scheme applicable to DC-DC converters is proposed. The output voltage of the DC-DC converter is fed back and converted to a current signal at the input terminal of the sensor to decide if it is in the tolerable range. The comparison is accomplished by a current push-pull action. With the embedded reference current in the sensor realized from the reference voltage. The advantages of the scheme lie in the fairly accurate and efficient implementation in terms of power consumption and chip size overhead compared with conventional voltage-mode schemes as the major parameter in converting voltage to current is determined by (W/L) aspect ratio of the core transistors. In this paper, a DC-DC converter of 5V output from battery range of 2.2V${\sim}$3.6V adopting the proposed sensing scheme is implemented in a 0.35um CMOS process to prove the validity of the scheme.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.278.1-278.1
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• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.83-87
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• 2002

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride ($SiN_X$) is widely used as a gate dielectric material for the hydrogenated amorphous silicon(a-Si:H) thin film transistors (TFT's). We investigated $SiN_X$ films were deposited PECVD at low temperature ($300^{\circ}C$). The reaction gases were used pure nitrogen and a helium diluted of silane gas(20% $SiH_4$, 80% He). Experimental investigations were carried out with the variation of $N_2/SiH_4$ flow ratios from 3 to 50 and the rf power of 200 W. This article presents the $SiN_X$ gate dielectric studies in terms of deposition rate, hydrogen content, etch rate and C-V, leakage current density characteristics for the gate dielectric layer of thin film transistor applications. Electrical properties were analyzed through high frequency (1MHz) C-V and current-voltage (I-V) measurements. The thickness and the refractive index on the films were measured by ellipsometry and chemical bonds were determined by using an FT-IR equipment.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.504-512
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• 2010

The paper proposes the 6bit 800MS/s flash A/D converter that can be applied to wireless USB chip-set. The paper simplified the error correction circuit and synchronization block as one circuit which are used respectively, and furthermore reduced the burden on the hardware. Comparing to the conventional error correction circuit, the proposed error correction circuit in this paper reduced 5 MOS transistors, the area of each error correction circuit is reduced by 9%. The A/D converter is fabricated with 0.18um CMOS 1-poly 6-metal process, and power dissipation is 182mW at 0.8Vpp input range and 1.8V supply voltage. The measured result shows 4.0bit of ENOB at 800MS/s conversion rate and 128.1MHz input frequency.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.