• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.501-504
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• 2014

This paper was developed and described core-process to implement low on resistance which was the most important characteristics of SJ (super junction) MOSFET. Firstly, using process-simulation, SJ MOSFET optimal structure was set and developed its process flow chart by repeated simulation. Following process flow, gate level process was performed. And source and drain level process was similar to genral planar MOSFET, so the process was the same as the general planar MOSFET. And then to develop deep trench process which was main process of the whole process, after finishing photo mask process, we developed deep trench process. We expected that developed process was necessary to develop SJ MOSFET for automobile semiconductor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.365-368
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• 2004

Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from $5{\times}10^{14}\;to\;1{\times}10^{16}/cm^3$. The thickness of the proposed device also varied from $400{\mu}m\;to\;500{\mu}m$. Due to the charge compensation effects, 4500V of breakdown voltage can be obtained.

• Journal of Power Electronics
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• v.12 no.6
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• pp.954-959
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• 2012

A hybrid switch that uses a microelectromechanical system (MEMS) switch as a gate driver of a MOSFET is applied to an energy harvesting system. The power management circuit adopting the hybrid switch provides ultralow leakage, self-referencing, and high current handling capability. Measurements show that solar energy harvester circuit utilizing the MEMS-MOSFET hybrid switch accumulates energy and charges a battery or drive a resistive load without any constant power supply and reference voltage. The leakage current during energy accumulation is less than 10 pA. The power management circuit adopting the proposed hybrid switch is believed to be an ideal solution to self-powered wireless sensor nodes in smart grid systems.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.213-223
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• 2000

It is necessary that radiation dose would be detect exactly generated from facility related to nuclear, space, radiotherapy center, etc. This paper is to use of the radiation-induced threshold voltage change as an accumulated radiation dose monitoring sensor. Commercial P Channel Power MOSFET(metal oxide field effect transistor) were tested in a Co-60 gamma irradiation facility to see their capabilities as a radiation dosimeter. We found that the transistors showed good linearity in their threshold voltage shift characteristics with radiation dose. The results demonstrate the potential use of commercial P Channel Power MOSFET as inexpensive radiation sensors.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.663-664
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• 2012

• Proceedings of the KIPE Conference
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• 2014.11a
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• pp.193-194
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• 2014

This paper compares physical characteristic of MOSFET based on Si and SiC to achieve high efficiency in converters using MOSFETs which are typical switching elements. Also, it compares a result to compare operating efficiency when DC/DC converter is switching with each element.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.587-590
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• 2013

Release competition and development of eco-friendly vehicles have been conducted violently also automaker, it will be a high growth industry of the charger and battery, which is the driving source of the motor of an electric vehicle. Reduces the on-resistance power elements DC - DC converter for battery charger for electric vehicles, must minimize switching losses. Should have a low on-resistance power than existing products. Compare the Super Junction MOSFET and Planar MOSFET, As a result, super junction MOSFET improve on about 87.4% on-state voltage drop performance than planar MOSFET.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.213-217
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• 2015

Device model parameters are very important for accurate estimation of electrical performances in devices, integrated circuits and their systems. There are a large number of methods for extraction of model parameters in power MOSFETs. For high efficiency, design is important considerations of a power MOSFET with high-voltage applications in consumer electronics. Meanwhile, it was proposed that the efficiency of a MOSFET can be enhanced by conducting JFET region double implant to reduce the On-resistance of the transistor. This paper reports the effects of JFET region double implant on the electrical properties and the decreasing On-resistance of the MOSFET. Experimental results show that the 1st JFET region implant diffuse can enhance the On-resistance by decreasing the ion concentration due to the surface and reduce the On-resistance by implanting the 2nd Phosphorus to the surface JFET region.

• Journal of IKEEE
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• v.27 no.4
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• pp.630-635
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• 2023

SiC is replacing the position of silicon in the power semiconductor field due to its superior resistance to adverse conditions such as high temperature and high voltage compared to silicon, which occupies the majority of existing industrial fields. In this paper, the gate of 4H-SiC Planar MOSFET, one of the power semiconductor devices, was formed with aluminium to make the contrast and parameter values consistent with polycrystalline Si gate, and the threshold voltage, breakdown voltage, and IV characteristics were studied by varying the channel doping concentration of SiC MOSFET.

• Proceedings of the KIPE Conference
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• 2014.11a
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• pp.33-34
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• 2014

In this paper, the inverter switch losses of BLDC motor for three types of PWM method and power devices was analyzed. When BLDC motor is driven at low currents, inverter switch losses for MOSFET is low because MOSFET operates like resistance. But, inverter switch losses for IGBT is higher than MOSFET due to its large turn-off losses. For low power inverter with MOSFET, the power losses of unified PWM is lower than that of unipolar and bipolar PWM.