• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.7-12
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• 2006

Local minority carrier lifetime control by means of particle irradiation is an useful technology for Production of modern silicon Power devices. Crystal damage due to ion irradiation can be easily localized by choosing appropriate irradiation energy and minority tarrier lifetime can be reduced locally only in the damaged layer. In this work, proton irradiation technology was used for improving the switching characteristics of a un diode. The irradiation was carried out with various energy and dose condition. The device was characterized by current-voltage, capacitance-voltage, and reverse recovery time measurements. Forward voltage drop was increased to 1.1 V at forward current of 5 A, which was $120\%$ of its original device. Reverse leakage current was 64 nA at reverse voltage of 100 V, and reverse breakdown voltage was 670 V which was the same voltage as original device without irradiation. The reverse recovery time of device was reduced to about $20\%$ compared to that of original device without irradiation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.734-740
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• 2003

In this paper, A Vector Modulator based a wideband analog phase shifter is realized with four P-I-N diode attenuators, an asymmetric coupled line coupler, a symmetric coupled line coupler, and a power combiner. Simple configuration to have advantages in cost, size, power, and the number of passive circuits is presented. The phase variation due to phase and amplitude error of a P-I-N diode attenuator is derived and used to optimize the overall circuit. The phase shifter shows a total phase shift of 360$^{\circ}$, a 8.2$^{\circ}$maximum phase error, and a 16${\pm}$2.5 dB insertion loss over the wide frequency range of 1 GHz to 3 GHz.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.4
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• pp.285-292
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• 2009

In this paper, when ac motors are driven by the diode rectifier/Z-source inverter system, the common-mode voltages of system are analyzed in details under both the shoot-through state and non-shoot-through state through equivalent circuits. Then a modified space vector modulation strategy is suggested for attenuating the negative common-mode voltage by eliminating the zero voltage vector, and also controlling the shoot-through time. Through the simulation studies with PSIM and experiments with 32-bit DSP, it is verified that the negative common-mode voltage can be reduced by more than 50%.

• Journal of Power Electronics
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• v.17 no.6
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• pp.1391-1401
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• 2017

In this paper, a secondary resonance half-bridge dc-dc converter with an inductive output filter is presented. The primary side of such a converter utilizes asymmetric pulse width modulation (APWM) to achieve zero-voltage switching (ZVS) of the switches, and clamps the voltage of the switch to the input voltage. In addition, zero current switching (ZCS) of the output diode is achieved by a half-wave rectifier circuit with a filter inductor and a resonant branch in the secondary side of the proposed converter. Thus, the switching losses and diode reverse-recovery losses are eliminated, and the performance of the converter can be improved. Furthermore, an inductive output filter exists in the converter reduce the output current ripple. The operational principle, performance analysis and design equation of this converter are given in this paper. The analysis results show that the output diode voltage stress is independent of the duty cycle, and that the voltage gain is almost linear, similar to that of the isolation Buck-type converter. Finally, a 200V~380V input, 24V/2A output experimental prototype is built to verify the theoretical analysis.

• Journal of IKEEE
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• v.18 no.2
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• pp.214-219
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• 2014

In this paper, the usage of tilt-implanted trench Schottky diode(TITSD) based on silicon carbide is proposed. A tilt-implanted trench termination technique modified for SiC is proposed as a method to keep all the potentials confined in the trench insulator when reverse blocking mode is operated. With the side wall doping concentration of $1{\times}10^{19}cm^{-3}$ nitrogen, the termination area of the TITSD is reduced without any sacrifice in breakdown voltage while potential is confined within insulator. When the trench depth is set to 11um and the width is optimized, a breakdown voltage of 2750V is obtained and termination area is 38.7% smaller than that of other devices which use guard rings for the same breakdown voltage. A Sentaurus device simulator is used to analyze the characteristics of the TITSD. The performance of the TITSD is compared to the conventional trench Schottky diode.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.361-364
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• 2000

One of the problems using DCR(Direct Conversion Receiver) are DC offset, poor channel selectivity. APDP(Anti Parallel Diode Pair) can be good candidate for DCR frequency mixer due to its inherent End harmonic suppression. APDP shows good IP2 and DC suppression. This paper describe single APDP LO power characteristics, IP2, and receiver structure utilizing APDP frequency mixer

• Journal of Industrial Technology
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• v.28 no.A
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• pp.177-184
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• 2008

A low loss frequency doubler operated on low power for the RFID harmonic tags is presented. Using the excellent nonlinear characteristics of the Schottky barrier diode and proper matching networks between the diode and ports, the low conversion loss of the harmonic tag is accomplished. This doubler could be used to increase the detectable distance of the conventional RFID system adopted harmonic tags.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.49-58
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• 1998

In this paper, a new equivalent circuit model for quantum-well laser diode (LD) is proposed. The model includes carrier transport effects in the SCH region, and rprovides, in a stable and accurate manner, large-and small-signal responses of laser diode output power as function of injected currents. SPICE simulation was performed using the circuit model and results are presented for L-I characteristics, pulse and frequency responses under various conditions. It is expencted that the new equaivalent circuit model will find useful applications for designing and analyzing OEIC, LD driver circuits, and LD packaging.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.139-143
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• 1996

We report on the static and dynamic characteristics of optically modulated resonant tunneling diode oscillator (RTDO) formed in double-barrier quantum-well structure. Under the illumination of Ti:Sapphire laser, the dc current-voltage (I-V) curves of RTDO shifted towared lower voltages. This characteristic was found to odify the series resistance, negtive differential resistance, capacitance, and the inductance of the RTDO. As a result, the resonant frequency of TRDO centered at 5.302 GHz was found to decrease about 20 MHz under the laser illumination. At a constnat bias voltage, the oscillation frequency decreased linearly as the laser power was increased.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1078-1080
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• 1999

A laser pulse generator which consists of charging resistor, energy storage capacitor laser diode, and switching elements was designed in order to generate 15ns, 20W laser pulses. And the effects of performances of SCR and FET as switching elements are compared. When SCR is used, the SCR's low maximum voltage makes the circuit so complicated, and when FET is used, the FET needs the special sate driver which improves the FET's operation.