• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.713-721
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• 2004

This paper presents a high Performance LNA based on InGaP/GaAs HBT for 5.4㎓ WAM band applications. During the past days, InGaP/GaAs HBT has been being used for mainly high power amplifiers, but InCaP/GaAs is recognized as a suitable device for RF single chip. At this point, the research about a high performance LNA based on InGaP/GaAs HBT must be preceded, and in this paper, a excellent linearity and noise characteristics LNA based on InGaP/GaAs HBT is desisted and fabricated. The LNA is integrated in new of 0.9${\times}$0.9$\textrm{mm}^2$ single chip with high Q spiral inductors and MIM capacitors. The proposed LNA is biased at current point for optimum noise figure and gain characteristics, futhermore, excellent linearity is achieved. The proposed LNA shows 13㏈ gain, 2.1㏈ noise figure, and excellent linearity in terms of IIP3 of 5.5㏈m.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.3
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• pp.2301-2307
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• 2015

The aim of this study was to evaluate the feasibility of application of the high voltage impulse (HVI) technique to the control of scale formation by calcium carbonate, which is pointed out as an important issue in industrial water treatment. The HVI system consisted of the power supply, high voltage generator, capacitors, switch and impulse generator was designed and made in laboratory scale, which can make 17kV impulse. HVI was introduced to the reactor that was filled with synthetic water containing $Ca^{2+}$ion. The concentration of calcium ion decreased only 3.0% after 5 minutes of contact time. However, it decreased up to 13.7% after 60 minutes of HVI contact time. Temperature and pH increased but conductivity decreased due to precipitation of the calcium carbonate. Although the decrease in concentration of calcium ion was not sufficient, it was verified that the HVI technique could be applicable for the softening and desalting processes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1133-1138
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• 2005

In this study, we have prepared, as the pluse power source, a commercially supplied Li-ion battery with a capacity of 700 mAh and AC resistivity of 60 md at 1 kHz and nonaqeous asymmetric hybrid capacitor composed of an activated carbon cathode and MCMB anode, and have examined the electrochemical characteristics of hybrid capacitor and the pulse performances of parallel connected hybrid capacitor/Li-ion battery source. The nonaqueous asymmetric hybrid capacitors constituted with each stack number of pairs composed of the cathode, the porous separator and the anode electrode were housed in Al-laminated film cell. The 10 stacked hybrid capacitor, which was charged and discharged at a constant current at 0.25 $mA/cm^2$ between 3 and 4.3 V, has exhibited the capacitance of 108F and the lowest equivalent series resistance was 32 $m{\Omega}$ at 1 kHz. On the other hand, the enhanced run time of Li-ion battery assisted by the hybrid capacitor was obtained with increasing of current density and pulse width in Pulse mode. The best improvement, $84\;\%$ for hybrid capacitor/Li-ion battery was obtained in the condition of a 7C-rate pulse (100 msec)/0.5C-rate standby/$10\;\%$ duty cycle.

• 전자공학회논문지 IE
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• v.46 no.1
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• pp.16-22
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• 2009

Integrated circuit of a pulse-type neuron for Hodgkin-Huxley model is implemented in a $0.5{\mu}m$ 1 poly 2 metal CMOS technology. Proposed pulse-type neuron model consist of input stage with summing function and pulse generating block which make neuron pulse above threshold value. Pulse generating circuit consist of several transistors, capacitors and negative resistor with a charge supply function. SPICE simulation results show that neuron pulse is generated above threshold current of 70 nA. Measurements of the fabricated pulse type neuron chip in condition of 5 V power supply are shown and compared with the simulated results.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.27-32
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• 1999

Metal-ferroelectric-semiconductor devices by susing rapid thermal annealed $LiNbO_3/Si$(100) structures were fabricated and demonstrated nonvolatile memory operations. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were about $600cm^2/V{\cdot}s$ and 0.16mS/mm, respectively. The ID-VG characteristics of MFSFET's showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3 films. The drain current of the on state was more than 4 orders of magnitude larger than the off state current at the same read gate voltage of 0.5V, which means the memory operation of the MFSFET. A write voltage as low as ${\pm}3V$, which is applicable to low power integrated circuits, was used for polarization reversal. The ferroelectric capacitors showed no polarization degradation up to $10^{10}$ switching cycles with the application of symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) of 500kHz.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.1
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• pp.49-58
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• 1999

This paper describes an integrated low pass filter fabricated by using $0.8{\mu}m$ single poly CMOS ASIC technology. The filter has been designed for a 5th-order elliptic switched capacitor filter with cutoff frequency of 5khz, 0.1dB passband ripple. The filter consists of MOS swiches poly capacitors and five CMOS op-amps. For the realization of the SC filter, continuous time transfer function H(s) is obtained from LC passive type, and transfered as discrete time transfer H(z) through bilinear-z transform. Another filter has been designed by capacitor scaling for reduced chip area, considering dynamic range of the op-amp. The test results of two fabricated filters are cutoff frequency of 4.96~4.98khz, 35~38dB gain attenuation and 0.72~0.81dB passband ripple with the ${\pm}2.5V$power supply clock of 50KHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.58-65
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• 2009

In this paper, we designed high voltage gate drive IC including dead time circuit in which capacitors controlled rising time and falling time, and schimitt-triggers controlled switching voltage. Designed High voltage gate drive IC improves an efficiency of half-bridge converter by decreasing dead time variation against temperature and has variable dead time by the capacitor value. and its power dissipation, which is generated on high side part level shifter, has decreased 52 percent by short pulse generation circuit, and UVLO circuit is designed to prevent false-operation. We simulated by using Spectre of Cadence to verify the proposed circuit and fabricated in a 1.0um process.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.863-866
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• 1999

(Ba,Sr)$TiO_3$ thin films have attracted groat interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2$/Ar plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage = 600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2, the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is 480$\AA/min$ at 10 % $BCl_3$ adding to $Cl_2$/Ar. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density measured by OES as a function of $BCl_3$ percentage in $Cl_2$/Ar. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2$/Ar. To study on the surface reaction of (Ba,Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion enhancement etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and Tic14 is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about $65\;{\sim}\;70$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.333-333
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• 2011

We have investigated the breakdown properties in liquids by high voltage pulse system. High voltage pulse power system is consisted of the Marx-generator with two capacitors (0.5 ${\mu}F$, withstanding voltage is 40 kV), to which the charging voltage can be applied to maximum 30 kV DC, spark gap switch and charging resistor of 20 $M{\Omega}$. We have made use of tungsten pin electrodes of anode-cathode (A-K), which are immersed into the liquids. The breakdown voltage and current signals are measured by high voltage probe (Tektronix P6015A) and current monitor (IPC CM-1.S). Especially the high speed breakdown or plasma propagation characteristics in the pulsed A-K gap have been investigated by using the high speed ICCD camera. We have measured the electron temperature through the Boltzmann plot method from the breakdown spectrums. Here the A-K gap has been changed by 1 mm, 2 mm, and 3 mm. The used liquids are distilled water and solution of salt (0.9 %). The output voltage and current signals at breakdown in distilled water are shown to be bigger than those in saline solution. The breakdown voltage and current characteristics in liquids will be discussed in accordance with A-K gap distances. It is also found that the electron temperatures and plasma densities in liquids are decreased in conformity with A-K gap.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.1-5
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• 2005

Electric double layer capacitors(EDLCS) based on the charge stored at the interface between a hi팀 surface area carbon electrode and an organic electrolyte solution are widely used as a maintenance-free power source for IC memories and microcomputers. The achievement of the excellent performance of the capacitor requires an electrolyte solution which provides high conductivities over a wide temperature range and good electrochemical stabilities to allow the capacitor to be operated at high voltage. The electrochemical capacitor using a carbon material as electrodes and using an organic electrolyte with $1M-LiPF_6$ in PC-GBL-DEC(volume ratio 1:1:2) has specific capacitance of 64F/g.