• 전기화학회지
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• 제5권3호
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• pp.131-142
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• 2002

순환전압전류 및 교류임피던스 기법을 이용하여 다결정 Pt/0.5M $H_2SO_4$ 및 0.5M LiOH수용액 계면에서 저전위 수소흡착(UPD H) 과 전위 수소흡착(OPD H)에 관한 Langmuir 흡착등온식 $({\theta}\;vs.\;E)$ 을 연구조사 하였다. 계면에서 치적중간주파수일 때 위상이동$(0^{\circ}{\leq}{-\phi}{\leq}90^{\circ})$ 거동은 표면피복율$(1{\geq}{\theta}{\geq}0)$ 거동에 정확하게 상응한다. 위상이 동 방법 즉 최적중간주파수일 때 위상이동 변화$({-\phi}\;vs.\;E)$는 계면에서 음극 $H_2$ 발생 반응에 관한 UPD H와 OPDH의 Langmuir흡착등온식을 결정할 수 있는 새로운 전기화학적 방법으로 사용할 수 있다 다결정 Pt/0.5M $H_2SO_4$ 수용액 계면에서 OPD H의 흡착평형상수(K)와 표준자유에너지$({\Delta}G_{ads})$는 각각 $2.1\times10^{-4}$와 21.0kJ/mol 이다. 다결정 Pt/0.5M LiOH 수용액 계면에서 K는 음전위(E)에 따라 2.7 (UPD H)에서 $6.2\times10^{-6}$ (OPD H) 또는 $6.2\times10^{-6}$(OPD H)에서 2.7 (UPD H)로 전이한다. 유사하게 ${\Delta}G_{ads}$는 E에 따라 -2.5kJ/mol (UPD H)에서 29.7kJ/mol (OPD H)또는 29.7kJ/mol (OPD H)에서 -2.5kJ/mol (UPD H)로 전이한다. K와 ${\Delta}G_{ads}$의 전이는 다결정 Pt전극 표면의 상이한 UPD H와 OPD H의 흡착부위에 기인한다. 다결정 Pt전극 계면에서 UPD H와 OPD H는 음극 $H_2$ 발생 반응에 따른 순차적 과정이 아니라, 수소 흡착부위 자체에 따른 독립적 과정이다. UPD H와 OPD H의 기준은 음극 $H_2$발생 반응과 전위가 아니라, 수소 흡착부위와 과정이다. 수용액에서 음극 $H_2$발생 반응에는 다결정 Pt선 전극이 단결정 Pt(100)원반 전극보다 더 효율적이고 유용하다 위상이동 방법은 열역학적 방법과 상충적이 아니라, 보완적이다.

• 센서학회지
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• 제16권2호
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• pp.97-103
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• 2007

Crystallized carbon nitride film that has many stable physical and/or chemical properties has been expected potentially by a new electrical material. However, one of the most significant problems degrading the quality of carbon nitride films is an existence of N-H and C-H bonds from the deposition environment. The possibility of these reactions with hydroxyl group in carbon nitride films, caused by a hydrogen attack, was suggested and proved in our previous reports that this undesired effect could be applied for fabricating micro-humidity sensors. In this study, MIS capacitor and MIM capacitor with $5{\mu}m{\times}5{\mu}m$ meshes were fabricated. As an insulator, carbon nitride film was deposited on a $Si_{3}N_{4}/SiO_{2}/Si$ substrate using reactive magnetron sputtering system, and its dielectric constant, C-V characteristics and humidity sensing properties were investigated. The fabricated humidity sensors showed a linearity in the humidity range of 0 %RH to 80 %RH. These results reveal that MIS and MIM $CN_{X}$ capacitive humidity sensors can be used for Si based micro-humidity sensors.

• 전기화학회지
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• 제7권4호
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• pp.194-200
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• 2004

The constant correlation factors between the Temkin and the Langmuir or the Frumkin adsorption isotherms of over-potentially deposited hydrogen (OPD H) for the cathodic H2 evolution reaction (HER) at poly-Pt and Re/0.5M $H_2SO_4$ and poly-Ni/0.05 M KOH aqueous electrolyte interfaces have been experimentally and consistently found using the phase-shift method. At intermediate values of the fractional surface coverage $(\theta),\;i.e.,\;02<{\theta}<0.8$, the Langmuir and Temkin adsorption isotherms of OPD H for the cathodic HER are correlated to each other even though the adsorption conditions or processes are different from each other. At the same range of $\theta$, correspondingly, the Frumkin and Temkin adsorption isotherms of OPD H for the cathodic HER are correlated to each other. The equilibrium constants $(K_o)$ for the Temkin adsorption isotherms $({\theta}\;vs.\; E)$ are consistently ca. 10 times greater than those (K, Ko) for the corresponding Langmuir or Frumkin adsorption isotherms ($({\theta}\;vs.\; E)$. The interaction parameters (g) for the Temkin adsorption isotherms $({\theta}\;vs.\; E)$ are consistently ra. 4.6 greater than those (g) for the corresponding Langmuir or Frumkin adsorption isotherms $({\theta}\;vs.\; E)$. These numbers (10 times and 4.6) can be taken as constant correlation factors between the corresponding adsolftion isotherms (Temkin, Langmuir, Frumkin) at the interfaces. The Temkin adsorption isotherm corresponding to the Langmuir or the Frumkin adsorption isotherm, and vice versa, can be effectively verified or confirmed using the constant correlation factors. Both the phase-shift methodand constant correlation factors are useful and effective for determining or confirming the suitable adsorption isotherms (Temkin, Langmuir, Frumkin) of intermediates for sequential reactions in electrochemical systems.

• Journal of Microbiology and Biotechnology
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• 제22권3호
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• pp.331-338
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• 2012

A novel gene coding for an endo-${\beta}$-1,4-mannanase (manA) from Bacillus subtilis strain G1 was cloned and overexpressed in P. pastoris GS115, and the enzyme was purified and characterized. The manA gene consisted of an open reading frame of 1,092 nucleotides, encoding a 364-aa protein, with a predicted molecular mass of 41 kDa. The ${\beta}$-mannanase showed an identity of 90.2-92.9% ${\leq}95%$) with the corresponding amino acid sequences from B. subtilis strains deposited in GenBank. The purified ${\beta}$-mannanase was a monomeric protein on SDS-PAGE with a specific activity of 2,718 U/mg and identified by MALDI-TOF mass spectrometry. The recombinant ${\beta}$-mannanase had an optimum temperature of $45^{\circ}C$ and optimum pH of 6.5. The enzyme was stable at temperatures up to $50^{\circ}C$ (for 8 h) and in the pH range of 5-9. EDTA and most tested metal ions showed a slightly to an obviously inhibitory effect on enzyme activity, whereas metal ions ($Hg^{2+}$, $Pb^{2+}$, and $Co^{2+}$) substantially inhibited the recombinant ${\beta}$-mannanase. The chemical additives including detergents (Triton X-100, Tween 20, and SDS) and organic solvents (methanol, ethanol, n-butanol, and acetone) decreased the enzyme activity, and especially no enzyme activity was observed by addition of SDS at the concentrations of 0.25-1.0% (w/v) or n-butanol at the concentrations of 20-30% (v/v). These results suggested that the ${\beta}$-mannanase expressed in P. pastoris could potentially be used as an additive in the feed for monogastric animals.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.16-19
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• 2006

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR characteristic of self-assembled 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto $pre-treatment(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1 mM/1 solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a 0.1 ${\mu}M/l$ solution of 4.4'-di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2,$ and finally blown dry with N_2. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2 V to +2 V with 298 K temperature. The vacuum condition was $6{\time}10^{-8}$ Torr. As a result, we found the NDR voltage of the 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate were $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ V(positive region). respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1844-1846
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• 2005

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR property of self-assembled 4,4- Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment$(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/l$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2V to +2V with 299K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found the NDR voltage of the nitro-benzene is $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ (positive region), respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• 전기화학회지
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• 제3권1호
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• pp.25-30
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• 2000

다결정 Pt/0.1 M $H_2SO_4$수성 전해질 계면에서 중간주파수 구간의 위상이동 변화와 Langmuir흡착등온식 사이의 관계를 교류임피던스 방법 즉 위상이동 방법을 이용하여 연구 조사하였다. 제안된 계면등가회로는 전해질저항($R_S$), Faraday저항$(R_F)$, 흡착유사용량$(C_\varphi)$의 등가회로 요소($C_P$)의 직렬접속으로 구성된다 지연되는 위상이동$(\varphi)$은 음전위(E) 및 주파수(f)에 따르며, $\varphi=-tan^{-1}[1/2{\pi}f(R_s+R_F)C_p]$이다. 중간주파수(6Hz)에서 위상이동 변화$(\varphi\;vs.\;E)$는 Langmuir흡착등온식$(\theta\;vs.\;E)$의 결정에 적용할 수 있는 실험적인 방법이다. 다결정 $Pt/0.1\;M\;H_2SO_4$ 전해질 계면에서 수소의 흡착평형 상수(K)와 흡착표준자유에너지$({\Delta}G_{ads})$는 각각 $1.8\times10^{-4}$와 21.4kJ/mol이며 과전위 수소흡착(OPD H)에 기인한다.