• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1772-1775
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• 2000

We have fabricated poly-Si TFTs by two-step crystallizaton. Poly-Si films have been prepared by furnace annealing(FA) and rapid thermal annealing(RTA) followed by subsequent the post-annealing, excimer laser annealing. The measured crystallinity of RTA and FA annealed poly-Si film is 77% and 68.5%, respectively. For two-step annealed poly-Si film, the crystallinity has been drastically to 87.7% and 86.3%. The RMS surface roughness from AFM results have been improved from 56.3${\AA}$ to 33.5${\AA}$ after post annealing. The measured transfer characteristics of the two-step annealed poly-Si TFTs have been improved significantly for the both FA-ELA and RTA-ELA. Leakage currents of two-step annealed poly-Si TFTs are lower than that of the devices by FA and RTA. From these results, we can describe the fact that the intra-grain defects has been cured drastically by the post-annealing.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.739-743
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• 2011

Ga doped ZnO (GZO)/Cu bi-layer films were deposited with RF and DC magnetron sputtering on glass substrate and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in gas pressure of $1{\times}10^{-3}$ Torr and the annealing temperatures were 150 and $300^{\circ}C$. With increasing annealing temperature, GZO/Cu films showed an increment in the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The GZO/Cu films annealed at $300^{\circ}C$ showed the highest optical transmittance of 70% and also showed the lowest electrical resistance of $85\;{\Omega}/{\Box}$ in this study.

• 전기전자학회논문지
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• 제28권1호
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• pp.104-109
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• 2024

본 연구에서는 다양한 가스 분위기에서 후열처리를 진행한 후 Ga₂O₃/SiC 이종접합 다이오드의 깊은 준위 결함 변화를 Deep Level Transient Spectroscopy(DLTS) 기법으로 분석하여 깊은 준위 결함의 변화가 Ga₂O₃/SiC 이종접합 소자의 전기적 특성에 미치는 영향을 조사하였다. 또한, J-V 측정 및 Hall 측정을 통한 전기적 특성 분석을 실시하였고, N₂ 분위기에서 열처리된 소자에서 3.06 × 10^-2 A/cm²로 가장 높은 on-state current가 측정되었으며, carrier concentration은 3.8 × 10¹⁴ cm^-3로 증가하는 것이 관측되었다. 이는 후열처리 분위기에 따른 깊은 준위 결함의 변화가 전기적 특성에 영향을 미칠 수 있음을 시사한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권1호
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• pp.16-21
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• 2015

In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

• 한국세라믹학회지
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• 제37권6호
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• pp.552-558
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• 2000

LiMn2O4 thin fiolm cathodes for Li-ion secondary battery were fabricated by r.f. magnetron sputtering technique. As-deposited films were amorphous. A spinel structure could not be obtained LiMn2O4 films by in-situ thermal annealing. After post thermal annealing over $700^{\circ}C$ in oxygen atmosphere, LiMn2O4 films prepared above 100 W r.f. power could be crystallized into a spinel structure. The electrochemical property of the LiMn2O4 film cathodes was tested in a Li/1 M LiClO4 in PC/LiMn2O4 cell. From cyclic voltammetry at scan rate of 2mV/sec of 2.5~4.5V, LiMn2O4 electrode prepared by post annealing at 75$0^{\circ}C$ showed good initial capacity. LiMn2O4 electrode prepared by post annealing at 80$0^{\circ}C$ showed the best crycling performance.

• 한국세라믹학회지
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• 제43권3호
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• pp.185-192
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• 2006

The effects of annealing on structural and electrical properties of ITO/PES (Indium Tin Oxide/Polyethersulfone) films was investigated. Amorphous ITO thin films were grown on plastic substrates, PES using low temperature DC magnetron sputtering. Various post annealing techniques were attempted to research variations of microstructure and electrical properties: i) conventional thermal annealing, ii) excimer laser annealing, iii) UV irradiation. The electrical properties were obtained using Hall effect measurements and DC 4-point resistance measurement. The microstructural features were characterized by FESEM, XRD, Raman spectroscopy in terms of morphology and crystallinity. Optimized UV treatment exhibits the enhanced conductivity and crystallinity, compared to those of conventional thermal annealing.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 춘계종합학술대회
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• pp.371-375
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• 2005

In this paper, the resonance characteristics of ZnO-based FBAR devices are compared. Several FBAR device samples were fabricated by using three different annealing methods while one sample remained non-annealed as a reference for comparison. Resonance characteristics could be significantly improved by both Bragg reflector-annealing and/or post-annealing steps. Especially, the use of two-step annealings resulted in most desirable resonance characteristic improvement compared with the Bragg reflector-annealing or post-annealing step alone.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.16-19
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• 2014

Charge trapping nonvolatile memory capacitors with $ZrO_2$ as charge trapping layer were fabricated, and the effects of post annealing atmosphere ($NH_3$ and $N_2$) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after $NH_3$ annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at $150^{\circ}C$, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using $NH_3$ annealing.

• 한국진공학회지
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• 제15권4호
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• pp.367-373
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• 2006

비스무스의 녹는점보다 3 도 낮은 온도인 $268^{\circ}C$에서 후열처리를 하여 비스무스 박막에서 자기저항의 큰 증가를 관측하였다. 레드텔러라이드 / 케드뮴텔러라이드 기판 위에서는 온도 5 K, 자기장 5T 하에서 190 에서 260으로, 마이카 기판 위에서는 620 에서 120 으로 자기저항의 큰 증가를 나타내었다. 이러한 자기저항의 큰 증가는, 열처리에 따른 결정도의 향상에 기인한 것으로 보인다. 하지만 일정 시간 이상의 오랜 시간의 열처리는 자기저항을 감소시키는 것으로 관측되었다.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.227-231
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• 2008

In this study, in order to improve the electrical properties of low temperature sintering piezoelectric ceramics, $[0.05Pb(Zn_{1/2}W_{1/2})-0.07Pb(Mn_{1/3}Nb_{2/3})-0.088Pb(Zr_{0.48}Ti_{0.52})]O_3$(abbreviated as PZW-PMN-PZT) ceramic systems were fabricated using $Bi_2O_3$, CuO and $Li_2CO_3$ as sintering aids and then their piezoelectric and dielectric properties were investigated according to the amount of $Li_2CO_3$ and post-annealing process. Post-annealing process enhanced all physical properties except for mechanical quality factor (Qm). 0.2 wt% $Li_2CO_3$ added and post-annealed specimen showed the excellent values suitable for low loss piezoelectric actuator application as follow: the density = 7.86 $g/cm^3$ electromechanical coupling factor (kp) = 0.575, piezoelectric constant $d_{33}$ = 370 pC/N, dielectric constant ($\varepsilon_r$) = 1546, and mechanical quality factor (Qm) = 1161, respectively.