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Magnetoresistance in Post-annealed Bi Thin Films on PbTe-buffered CdTe(111)B and on Mica Substrates  

Kim Yun-Ki (Dept. of Electrophysics, Kwangwoon University)
Choi Jin-Sung (Dept. of Electrophysics, Kwangwoon University)
Li Hai-Bo (Dept. of Electrophysics, Kwangwoon University)
Cho Sung-Lae (Dept. of Physics, University of Ulsan)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.4, 2006 , pp. 367-373 More about this Journal
Abstract
We have observed a large increase in the magnetoresistance (MR) of Bi thin films, which were subjected to a post-annealing procedure at $268^{\circ}C$C, $3^{\circ}C$ below the Bi melting point. We have achieved an increase in the MR by 260-fold and 1200-fold at 5 K and 5 T after post-annealing, as compared with 190 and 620 for an as-deposited Bi film on PbTe/CdTe(111) and on mica, respectively. The large MR increase by post-annealing might be due to the improvement of crystallinity according to the x-ray analysis. However, post-annealing over a certain amount time showed the reduction in MR values.
Keywords
Bismuth film; Magneto-resistance; Post-annealing;
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