• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.146-146
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• 1999

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1009-1010
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• 2013

• 통합자연과학논문집
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• 제3권3호
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• pp.138-142
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• 2010

Polystyrene thin films containing Bragg structures have been successfully obtained by the removal of DBR porous silicon films from the DBR structured porous silicon/polystyrene composite film in HF/$H_2O$ mixture solution and by replicating the nano-structures of porous silicon containing Bragg structure. Polystyrene thin films containing Bragg structures displayed unique optical reflection resonances in optical reflection spectrum. This optical reflection band was resulted from the interference of reflection wavelength at Bragg structure of polystyrene thin films. The wavelength of reflection resonances could be modified by the change of Bragg structure of the master. Polystyrene thin films containing Bragg structures were flexible and maintained their optical characteristics upon bending. The Polystyrene thin films replicate the photonic features and the nanostructure of the master.

• Journal of Electrochemical Science and Technology
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• 제7권2호
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• pp.161-169
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• 2016

Porous tungsten oxide thin films were prepared by electrodeposition and tested as anodes of lithium secondary batteries. The synthesized films were composed of nanoparticles of 60-140 nm size, with porosities of 30-40 %. Increasing the temperature turned out to be a more effective approach to introduce porosity in the structure than increasing the electrolyte viscosity. The assessment of the synthesized films as anodes of lithium secondary batteries revealed a much higher initial discharge capacity for the porous than the dense samples. The discharge capacity retention significantly increased with increasing porosity and was further enhanced by heat treatment. In particular, a thin film composed of particles of about 140 nm in size and with a porosity of 40 % exhibited an initial discharge capacity higher than 600 mAh/g and a remaining capacity above 300 mAh/g after 30 cycles. Following heat treatment, the remaining capacity of this sample after 30 cycles increased to about 500 mA h/g.

• 한국분말재료학회지
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• 제24권2호
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• pp.102-107
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• 2017

Porous polytetrafluoroethylene (PTFE) thin films are fabricated by spin-coating using a dispersion solution containing PTFE powders, and their crystalline properties are investigated after thermal annealing at various temperatures ranging from 300 to $500^{\circ}C$. Before thermal annealing, the film is densely packed and consists of many granular particles 200-300 nm in diameter. However, after thermal annealing, the film contains many voids and fibrous grains on the surface. In addition, the film thickness decreases after thermal annealing owing to evaporation of the surfactant, binder, and solvent composing the PTFE dispersion solution. The film thickness is systematically controlled from 2 to $6.5{\mu}m$ by decreasing the spin speed from 1,500 to 500 rpm. A triboelectric nanogenerator is fabricated by spin-coating PTFE thin films onto polished Cu foils, where they act as an active layer to convert mechanical energy to electrical energy. A triboelectric nanogenerator consisting of a PTFE layer and Al metal foil pair shows typical output characteristics, exhibiting positive and negative peaks during applied strain and relief cycles due to charging and discharging of electrical charge carriers. Further, the voltage and current outputs increase with increasing strain cycle owing to accumulation of electrical charge carriers during charge-discharge.

• 한국세라믹학회지
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• 제35권5호
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• pp.486-492
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• 1998

Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.96-98
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• 2009

This report summarizes our recent efforts to produce large-grained CIGS materials from porous nanoparticle thin films. In our approach, a $Cu_xSe$ nanoparticle colloid were first prepared by reacting a mixture of CuI in pyridine with $Na_2Se$ in methanol at reduced temperature. purified colloid was sprayed onto heated molybdenum-coated sodalime glass substrates to form thin film. After thermal processing of the thin film under a selenium ambient. $Cu_xSe$ colloid and thin film were characterized by scanning electron microscopy, x-ray diffraction. The optical(direct) band gap energy of $Cu_xSe$ thin films is 1.5 eV.

• Composites Research
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• 제29권4호
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• pp.151-155
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• 2016

그래핀은 저차원 구조에서 기인하는 우수한 특성으로 인해 슈퍼커패시터의 전극소재로 응용이 가능한 소재이다. 본 연구에서는 2차원 구조인 그래핀의 비 표면적 향상을 위해 다공성 니켈 나노구조체 표면에 열 화학기상증착법과 마이크로웨이브 플라즈마 화학기상증착법을 이용하여 3차원의 그래핀을 합성하였다. 주사전자현미경, 라만 분광법, X-선 광전자 분광법을 통해 합성된 그래핀의 구조적, 화학적 특성을 분석한 결과, 3차원 구조의 우수한 결정성을 지니는 다중층 그래핀이 다양한 기판 위에 합성된 것을 확인할 수 있었다.

• 한국세라믹학회지
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• 제36권5호
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• pp.465-470
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• 1999

Sensing properties of $\alpha$-Fe2O3 thin film to reducing gases such as CHx and CO were systematically examined after deposition on Al2O3 substrate by PECVD(Plasma Enhanced Chemical Vapor Deposition)technique. Microstructure of deposited $\alpha$-Fe2O3 thin film showed the porous island structure. This specimen was annealed at 450, 550, $650^{\circ}C$ to enhance the gas sensing properties and investigated in terms of CO and C4H10 concentration from 500ppm to 3,000 ppm at operating temperature of 35$0^{\circ}C$ The gas sensitivity(%) to C4H10 measured at the operating temperature of 35$0^{\circ}C$ was 98.24 (highest sensitivity) 69.51 to CO and 2% to CH4 respectviely.

• 한국세라믹학회지
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• 제43권5호
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• pp.265-269
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• 2006

We have deposited NiO films by RF sputtering on $Al_2O_3/SiO_2/Si$ and 100 nm-thick Gd doped $CeO_2$ covered $Al_2O_3/SiO_2/Si$ substrates at various $Ar/O_2$ ratios. The deposited films were reduced to form porous Ni thin fllms in 4% $H_2\;at\;400^{\circ}C$. For the films deposited in pure Ar, the reduction was retarded due to the thickness and the orientation of the NiO films. On the other hand, the films deposited in oxygen mixed ambient were reduced and formed porous Ni films after 20 min of reduction. We also investigated the possibility of using the films for the single chamber operation by studying the electrical property of the films in the fuel/air mixed environment. It is shown that the resistance of the Ni film increases quickly in the mixed gas environment and thus further improvements of Ni-base anodes are required for using them in the single chamber operation.