• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.285-289
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• 2018

We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.6
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• pp.855-859
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• 2012

Silicon nanowires (SiNWs) were fabricated by a metal-assisted chemical etching of Si and the porous structure on their surfaces was controlled by changing the volume ratio of the etching solution composed of hydrofluoric acid, hydrogen peroxide, and deionized water. The concentration of hydrogen peroxide as the oxidant was varied for controlling the porosity of SiNWs. The optical properties of porous SiNWs were unique and very different from those of single-crystalline Si, as characterized by measuring their photoluminescence and Raman spectra for different porosities.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.406-410
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• 2020

Despite a simple preparation of manganese oxide (MnO₂) nanowires by electrodeposition, the improvement in specific capacitance (C_sp) and voltammetric response of the MnO₂ nanowire-based electrodes has been quite limited. This is attributed to the poor electrical conductivity of MnO₂ and its dense bulk morphology due to the aggregation of the nanowires. This study investigated the capacitive performance of MnO₂ nanowires electrodeposited on agarose thin films. The good ionic conductivity and porous network of the agarose film provided favorable growth conditions for the MnO₂ nanowires with suppressed aggregation. A maximum C_sp value of 686 F/g measured at a scan rate of 10 mV/s was obtained, which was significantly larger than that of 314 F/g for the agarose-free MnO₂ electrode at the same scan rate. The rate capability was also improved. The C_sp measured at a high scan rate of 100 mV/s retained 74.0% of the value measured at 10 mV/s, superior to the retention of 71.1% for the agarose-free MnO₂ electrode.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.1-16.1
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• 2011

Gas sensor properties of $WO_3$ nanowire structures have been studied. The sensing layer was prepared by deposition of tungsten metal on porous single wall carbon nanotubes followed by thermal oxidation. The morphology and crystalline quality of $WO_3$ material was investigated by SEM, TEM, XRD and Raman analysis. A highly porous $WO_3$ nanowire structure with a mean diameter of 82 nm was obtained. Response to CO, $NH_3$ and $H_2$ gases diluted in air were investigated in the temperature range of $100{\sim}340^{\circ}C$ The sensor exhibited low response to CO gas and quite high response to $NH_3$ and $H_2$ gases. The highest sensitivity was observed at $250^{\circ}C$ for $NH_3$ and $300^{\circ}C$ for $H_2$. The effect of the diameters of $WO_3$ nanowires on the sensor performance was also studied. The $WO_3$ nanowires sensor with diameter of 40 nm showed quite high sensitivity, fast response and recovery times to $H_2$ diluted in dry air. The sensitivity as a function of detecting gas concentrations and gas sensing mechanism was discussed. The effect of dilution carrier gases, dry air and nitrogen, was examined.

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2457-2460
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• 2011

• Journal of Powder Materials
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• v.19 no.5
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• pp.367-372
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• 2012

Single crystalline Cu nanowires with controlled diameters and aspect ratios have been synthesized using electrochemical deposition within confined nanochannels of a porous anodic aluminium oxide(AAO) template. The diameters of nano-sized cylindrical pores in AAO template were adjusted by controlling the anodization conditions. Cu nanowires with diameters of approximately 38, 99, 274 nm were synthesized by the electrodeposition using the AAO templates. The crystal structure, morphology and microstructure of the Cu nanowires were systematically investigated using XRD, FE-SEM, TEM and SAED. Investigation results revealed that the Cu nanowires had the controlled diameter, high aspect ratio and single crystalline nature.

• Journal of Powder Materials
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• v.22 no.3
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• pp.216-220
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• 2015

Vertically oriented nickel nanowire arrays with a different diameter and length are synthesized in porous anodic aluminium oxide templates by an electrodeposition method. The pore diameters of the templates are adjusted by controlling the anodization conditions and then they are utilized as templates to grow nickel nanowire arrays. The nickel nanowires have the average diameters of approximately 25 and 260 nm and the crystal structure, morphology and microstructure of the nanowires are systematically investigated using XRD, FE-SEM and TEM analysis. The nickel nanowire arrays show a magnetic anisotropy with the easy axis parallel to the nanowires and the coercivity and remanence enhance with decreasing a wire diameter and increasing a wire length.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.52.1-52.1
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• 2009

Cupric oxide (CuO) is a p-type semiconductor with band gap of ~1.7 eV and reported to be suitable for catalysis, lithium-copper oxide electrochemical cells, and gas sensors applications. The nanoparticles, plates and nanowires of CuO were found sensing to NO2, H2S and CO. In this work, we report about the comparison about hydrogen sensing of nano thin film and nanowires structured CuO deposited on single-walled carbon nanotubes (SWNTs). The thin film and nanowires are synthesized by deposition of Cu on different substrate followed by oxidation process. Nano thin films of CuO are deposited on thermally oxidized silicon substrate, whereas nanowires are synthesized by using a porous thin film of SWNTs as substrate. The hydrogen sensing properties of synthesized materials are investigated. The results showed that nanowires cupric oxide deposited on SWNTs showed higher sensitivity to hydrogen than those of nano thin film CuO did.

• Advances in nano research
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• v.12 no.6
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• pp.593-603
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• 2022

The critical buckling temperature rise of a newly proposed piezoelectrically active sandwich plate (ASP) has been investigated in this work. This structure includes a porous polymeric layer integrated between two piezoelectric nanocomposite layers. The piezoelectric material is made of a passive polymeric material that is activated by lead-free nanowires (NWs) of zinc oxide (ZnO) embedded inside the matrix. In both nanocomposite layers and porous core, functional graded (FG) patterns have been considered for the distributions of ZnO NWs and voids, respectively. By adopting a higher-order theory of plates, the governing equations of thermal buckling are obtained. This set of equations is then treated using an extended mesh-free solution. The effects of plate dimensions, porosity states, and the nanowire parameters have been investigated on the critical buckling temperature rises of the proposed lightweight ASPs with different boundary conditions. The results disclose that the use of porosities in the core and/or mixing ZnO NWs in the face sheets substantially arise the critical buckling temperatures of the newly proposed active sandwich plates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.245-250
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• 2019

We investigated the post-annealing effect of Sn-incorporated β-Ga₂O₃ (β-Ga₂O₃ : Sn) nanowires (NWs) grown on sapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga₂O₃ : Sn NWs were converted to a porous structure during the vacuum annealing process at 800℃. Host non-stoichiometric Ga₂O_3-x, is transformed into stoichiometric Ga₂O₃, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result, the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga₂O₃ : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga₂O₃ : Sn NWs.