• Korean Journal of Materials Research
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• v.23 no.8
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• pp.469-475
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• 2013

Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlled the uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films, AZO films using ALD was controlled to be three different thicknesses (50 nm, 100 nm, and 150 nm). The structural, chemical, electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy, field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Vis spectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased, and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The average surface roughnesses of the samples using atomic force microscopy were ~3.01 nm, ~2.89 nm, and ~2.44 nm, respectively. As the thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and optical properties of AZO thin films. Therefore, the thickest AZO thin films with 150 nm exhibited excellent resistivity (${\sim}7.00{\times}10^{-4}{\Omega}{\cdot}cm$), high transmittance (~83.2 %), and the best FOM ($5.71{\times}10^{-3}{\Omega}^{-1}$). AZO thin films fabricated using ALD may be used as a promising cadidate of TCO materials for optoelectronic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.181.2-181.2
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• 2015

Sputtering is one of the most popular physical deposition methods due to their versatility and reproducibility. Synthesis of Cr thin films by DC magnetron sputtering using glancing angle deposition (GLAD) has been reported. Chromium thin films have been prepared at two different working pressure($2.0{\times}10-2$, 30, $3.3{\times}10-3torr$) on Si-wafer substrate using magnetron sputtering with glancing angle deposition (GLAD) technique. The thickness of Cr thin films on the substrate was adjusted about 1 mm. The electrical property was measured by four-point probe method. For the measurement of density in the films, an X-ray reflectivity (XRR) was carried out. The sheet resistance and column angle increased with the increase of glancing angle. However, nanohardness and density of Cr thin films decreased as the glancing angle increased. The measured density for the Cr thin films decreased from 6.1 to 3.8 g/cc as the glancing angle increased from $0^{\circ}$ to $90^{\circ}$ degree. The low density of Cr thin films is resulted from the isolated columnar structure of samples. The evolution of the isolated columnar structure was enhanced at the conditions of low sputter pressure and high glancing angle. This GLAD technique can be potentially applied to the synthesis of thin films requiring porous and uniform coating such as thin film catalysts or gas sensors.

• Journal of the Korean Ceramic Society
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• v.36 no.3
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• pp.307-318
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• 1999

동결건조법에 의한 저유전성 실리카 박막의 제조공정 개발 및 층간 절연물질로의 응용성이 연구되었다. 코팅용 폴리머 실리카 졸은 TEOS와 이소프로판올(iso-propanol:IPA)또는 터트부탄올(tert-butanol:TBA)을 용매로한 2단계 공정에 의하여 제조되었으며, 이들 졸을 p-Si(111)웨이퍼 상에 스핀코팅한 습윤겔 박막을 동결건조 하여 다공성 실리카 박막을 제조하였다. 균일한 박막 코팅층을 얻을 수 있는 실리카 졸의 최적 점도범위는 IPA와 TBA를 용매로 한 실리카 졸의 경우 각각 10~14 cP와 20~30cP 정도였으며 스핀속도는 2000 rpm 이상이었다. 결함이 없는 다공성 실리카 박막은 TBA(빙점 $25^{\circ}C$)를 동결용매로 하여-196$^{\circ}C$까지 급랭시킨 후 $0^{\circ}C$와 0.1 torr 까지 가열 감압한 상태에서 고상의 TBAFMF 모두 제거한 다음 20$0^{\circ}C$까지 열처리하여 제조되었다. 다공성 실리카 박막의 두께는 졸의 타입과 스핀코팅 속도에 의해 2500~15000$\AA$범위 내에서 제어가 가능하였으며 이들 막의 밀도와 유전상 수 값은 각각 0.9$\pm$0.3g/㎤(기공율 60$\pm$10%)과 2.4 정도였다.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.189-192
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• 2014

Yttria-stablized zirconia (YSZ) is the most commonly used electrolyte material, but the reduction in working temperature leads to insufficient ionic conductivity. Ceria based electrolytes (GDC) are more attractive in terms of conductivity at low temperature, but these materials are well known to be reducible at very low oxygen partial pressure. The reduction of electrolyte resistivity is necessary to overcome cell performance losses. So, thin YSZ/GDC bilayer technology seems suitable for decreasing the electrolyte resistance at lower operating temperatures. Bilayer electrolytes composed of a galdolinium-doped $CeO_2$ ($Ce_{0.9}Gd_{0.1}O_{1.95}$, GDC) layer and yttria-stabilized $ZrO_2$ (YSZ) layer with various thicknesses were deposited by RF sputtering and E-beam evaporation. The bilayer electrolytes were deposited between porous Ni-GDC anode and LSM cathode for anode-supported single cells. Thin film structure and surface morphology were investigated by X-ray diffraction (XRD), using $CuK{\alpha}$-radiation in the range of 2ce morphol$^{\circ}C$. The XRD patterns exhibit a well-formed cubic fluorite structure, and sharp lines of XRD peaks can be observed, which indicate a single solid solution. The morphology and size of the prepared particles were investigated by field-emission scanning electron microscopy (FE-SEM). The performance of the cells was evaluated over $500{\sim}800^{\circ}C$, using humidified hydrogen as fuel, and air as oxidant.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.123-129
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• 2003

Thin transparent Cu films in the thickness range of 10 ~ 40 nm are deposited by rf-magnetron sputtering on porous silicon (PS) anodized on p-type silicon in dark. Microstructural features of the Cu films are investigated using SEM, AFM and XRD techniques. The RMS roughness of the Cu films is found to be around 1.47 nm and the grain growth is columnar with a (111) preferred orientation and follows the Volmer-Weber mode. The photoluminescence studies showed that a broad luminiscence peak of PS near the blue-green region gets blue shifted (~0.05 eV) with a small reduction in intensity and therefore, Cu-related PL quenching is absent. The FTIR absorption spectra on the PS/Cu structure revealed no major change of the native PS peaks but only a reduction in the relative intensity. The I-V characteristic curves further establish the Schottky nature of the diode with an ideality factor of 2.77 and a barrier height of 0.678 eV. An electroluminiscence (EL) signal of small intensity could be detected for the above diode.

• Corrosion Science and Technology
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• v.14 no.3
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• pp.140-146
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• 2015

The commercialization of aluminum had been delayed than other metals because of its high oxygen affinity. Anodizing is a process in which oxide film is formed on the surface of a valve metal in an electrolyte solution by anodic oxidation reaction. Aluminum has thin oxide film on surface but the oxide film is inhomogeneous having a thickness only in the range of several nanometers. Anodizing process increases the thickness of the oxide film significantly. In this study, porous type oxide film was produced on the surface of aluminum in sulfuric acid as a function of electrolyte temperature, and the optimum condition were determined for anodizing film to exhibit excellent cavitation resistance in seawater environment. The result revealed that the oxide film formed at $10^{\circ}C$ represented the highest cavitation resistance, while the oxide film formed at $15^{\circ}C$ showed the lowest resistance to cavitation in spite of its high hardness.

• Journal of the Korean Electrochemical Society
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• v.18 no.2
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• pp.81-85
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• 2015

A method for degradation of the perchlorate anion ($ClO{_4}^-$) has been studied using electrochemically generated zero-valent iron (ZVI) deposited on a porous carbon electrode. The first strategy of this study is to produce the ZVI via the electrochemical reduction of iron (II) on a porous carbon electrode coated with a conducting polymer, instead of employing expensive $NaBH_4$. The present method produced well distributed ZVI on conducting polymer (polypyrrole thin film) and increased surface area. ZVI surface can be regenerated easily for successive reduction. The second strategy is to apply a mild reducing condition (-0.3 V) to enhance the efficiency of the degradation of perchlorate with ZVI without the evolution of hydrogen. The electrochemically generated ZVI nanoparticles may offer an alternative means for the complete destruction perchlorate without evolution of hydrogen in water with high efficiency and at low cost.

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.100-104
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• 2012

Thrombin is a serine protease that catalyzes the conversion of soluble fibrinogen to insoluble fibrin, and thus induces physiological and pathological blood coagulation. Therefore, it is important to detect thrombin in blood serum for purposes of diagnosis. To achieve this goal, it has been suggested that a 15-mer aptamer strongly binds with thrombin to form a G-quartet structure of the aptamer. Generally, 5'-end thiol-functionalized aptamer has been used as an anti-thrombin binder. Herein, we evaluate the possibility of utilizing a 3'-SH aptasensor for thrombin detection using SPR spectroscopy, and compare the enhancement of the electrochemical signal of the thrombin-aptamer bound on a porous gold substrate. Although the two aptamers have similar configurations, in SPR analysis, the 3'-SH aptamer was a effective aptasensor as well as 5'-SH aptamer. Results from electrochemical analysis showed that the porous gold substrate acted as a good substrate for an aptasensor and demonstrated 5-fold enhancement of current change, as compared to gold thin film.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.901-908
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• 1999

Effects of LPMOCVD process parameters on the properties of TiO2 thin film were investigated. Depositions were made in the range of temperature 300-67$0^{\circ}C$ with various TTIP(Titanium Tetraisopropoxide) concentrations by contrlling bubbler temperature(40-8$0^{\circ}C$) and/or flow rate(30-90 sccm). Post annealing treatments were carried out at 500-80$0^{\circ}C$ range in the air. Films deposited at 40$0^{\circ}C$ have denser morphology than those of films deposited at 50$0^{\circ}C$ and $600^{\circ}C$ due to slower deposition rate. Bubbler temperature can affect on the deposition rate in mass transfer controlled regime such as 50$0^{\circ}C$ or higher but not below 50$0^{\circ}C$ where surface reaction rate becomes important. On the contrary for films deposited above 50$0^{\circ}C$ flow rate can raise deposition rate but eventually saturate it at the 50 sccm and above due to retarded adhesion of decomposed species. But for films deposited at 40$0^{\circ}C$ deposition rate increases stadily with flow rate. As the film becomes more porous A(200) texture can not be developed and AnataselongrightarrowRutile transition kinetics increases.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.115-127
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• 1999

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to form in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also used in the gas phase synthesis of the nanoparticles. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles inthe gas phase. Charged clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVDd process. The epitaxial sticking of the charged clusters on the growing surface is gettign difficult as the cluster size increases, resulting in the nanostructure such as cauliflowr or granular structures.