• 전기학회논문지
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• 제67권4호
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• pp.543-548
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• 2018

Ferroelectric $Bi_4Ti_3O_{12}$ films were deposited on $SrTiO_3(100)$ and Si(100) substrate by using conductive $SrRuO_3$ films as underlayer, and their ferroelectric and electrical properties were investigated depending on crystal structure and orientation. C-axis oriented $Bi_4Ti_3O_{12}$ films were grown on well lattice-matched pseudo-cubic $SrRuO_3$ films deposited on $SrTiO_3(100)$ substrate, while random-oriented polycrystalline $Bi_4Ti_3O_{12}$ films were grown on $SrRuO_3$ films deposited on Si(100) substrate. The random-oriented polycrystalline film showed a good ferroelectric hysteresis property with remanent polarization ($P_r$) of $9.4{\mu}C/cm^2$ and coercive field ($E_c$) of 84.9 kV/cm, while the c-axis oriented film showed $P_r=0.64{\mu}C/cm^2$ and $E_c=47kV/cm$ in polarizaion vs electric field curve. The c-axis oriented $Bi_4Ti_3O_{12}$ film showed a dielectric constant of about 150 and lower thickness dependence in dielectric constant compared to the random-oriented film. Furthermore, the c-axis oriented $Bi_4Ti_3O_{12}$ film showed leakage current lower than that of the polycrystalline film. The difference of ferroelectric properties in two films was explained from the viewpoint of depolarization effect due to orientation of spontaneous polarization and layered crystal structure of bismuth-base ferroelectric oxide.

• 소성∙가공
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• 제29권3호
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• pp.127-134
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• 2020

It is known that the difference of texture of the polycrystalline Al sheet is not a critical parameter for the formation of aligned nanopore arrays in anodic aluminum oxide (AAO). This will be related to the polycrystalline grain in the Al sheet. The texture of each grain in the polycrystalline Al sheet is different. The mixed textures of grains have the mixing effects on the nanopore structure of the AAO. Thus, the effect of Al texture on the nanopore structure of the AAO was investigated using three types of Al single crystals with (111), (200) and (220) textures in this paper. These three types of AAO layers were fabricated by the two-step anodizing method at 40 V and temperature of 0-5℃ in oxalic acid solution. In the nanopores formed on the AAO, the average area of one nanopore and the average roundness of one nanopore were measured were measured based on the SEM images. In the hexagon obtained by connecting nanopores on the AAO, the average standard deviation of one angle deviated from 120° was measured. In the AAO nanopores with texture of (111), (200) and (220) single crystal samples, the average area of one nanopore of (200) single crystal sample was the widest, followed by (111), (220) single crystals. The average circularity of one nanopore of (200) single crystal sample was the best, followed by (111), (220) single crystals. The average standard deviation of an angle from 120° of (220) single crystal sample was the largest, followed by (111) and (200) single crystals.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• 한국재료학회지
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• 제18권9호
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• pp.507-510
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• 2008

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

• 한국분말재료학회지
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• 제22권3호
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• pp.203-207
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• 2015

This study investigated the microstructure and wear resistance property of HPHT(high pressure high temperature) sintered PDC(polycrystalline diamond compact) in accordance with initial molding pressure. After quantifying an identical amount of diamond powder, the powder was inserted in top of WC-Co sintered material, and molded under four different pressure conditions (50, 100, 150, $200kgf/cm^2$). The obtained diamond compact underwent sintering in high pressure, high temperature conditions. In the case of the $50kgf/cm^2$ initial molding pressure condition, cracks were formed on the surface of PDC. On the other hand, PDCs obtained from $100{\sim}200kgf/cm^2$ initial molding pressure conditions showed a meticulous structure. As molding pressure increased, low Co composition within PDC was detected. A wear resistance test was performed on the PDC, and the $200kgf/cm^2$ condition PDC showed the highest wear resistance property.

• 한국재료학회지
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• 제5권2호
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• pp.197-202
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• 1995

저압 화학 기상증착법으로 제작한 비정질 실리콘의 표면 형태 및 결정 성장 과정을 증착조건과 열처리 조건의 변화에 따라 조사하였다. 비정질에서 결정으로 변화하는 전이온도인 570~$590^{\circ}C$에서 증착한 시편은 (311)조직의 거친 표면으로 성장하였다. 같은 증착 온도에서 두께가 두꺼울수록 다결정에서 비정질로 변화하였다. 증착하는 과정에서의 결정화는 기판에서부터 시작되지만, 진공상태를 그대로 유지하고 비정질 실리콘을 전이온도에서 열처리하면 표면 실리콘 원자가 이동하여 결정화하였다.

• 센서학회지
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• 제16권3호
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• pp.197-201
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• 2007

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_{2}$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_{3}$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_{2}$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at a lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_{2}$ and 16 % Ar with the $CHF_{3}$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

• 한국자기학회지
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• 제18권6호
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• pp.217-220
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• 2008

Rare-earth iron oxide $ErFe_2O_4$의 다결정체 시료의 자기적 특성을 연구하였다. 단일상의 다결정체 $ErFe_2O_4$ 시료를 CO/$CO_2$ gas 분위기에서 고체상태반응법으로 합성하였다. X-ray diffraction 측정을 통해 $ErFe_2O_4$ 시료는 space group R3m Rhombohedral 구조를 가지며, 온도에 의존하는 magnetization 측정을 통해 250 K에서는 자기적 전이가, 220 K에서는 구조적 전이가 일어나는 2단계 상전이 현상을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.348-349
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, Hz, and Ar gas at $1180^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84 V, over 140 V, 61nm, and $2.7\;{\times}\;10^{19}\;cm^3$, respectively. The p-n junction diodes fabricated on the poly 3C-SiC/Si(p-type) were obtained like characteristics of single 3C-SiC p-n junction diodes. Therefore, poly 3C-SiC thin film diodes will be suitable microsensors in conjunction with Si fabrication technology.

• Current Applied Physics
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• 제18권12호
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• pp.1534-1539
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• 2018

SnSe single crystal showed a high thermoelectric zT of 2.6 at 923 K mainly due to an extremely low thermal conductivity $0.23W\;m^{-1}\;K^{-1}$. It has anisotropic crystal structure resulting in deterioration of thermoelectric performance in polycrystalline SnSe, providing a low zT of 0.6 and 0.8 for Ag and Na-doped SnSe, respectively. Here, we presented the thermoelectric properties on the K-doped $K_xSn_{1-x}Se$ (x = 0, 0.1, 0.3, 0.5, 1.5, and 2.0%) polycrystals, synthesized by a high-temperature melting and hot-press sintering with annealing process. The K-doping in SnSe efficiently enhances the hole carrier concentration without significant degradation of carrier mobility. We find that there exist widespread Se-rich precipitates, inducing strong phonon scattering and thus resulting in a very low thermal conductivity. Due to low thermal conductivity and moderate power factor, the $K_{0.001}Sn_{0.999}Se$ sample shows an exceptionally high zT of 1.11 at 823 K which is significantly enhanced value in polycrystalline compounds.