• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.24-29
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• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• KEPCO Journal on Electric Power and Energy
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• v.3 no.2
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• pp.141-146
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• 2017

In this work, a simulation study on net 500 MW class of Poly-Generation was conducted for the retrofit of an aged natural gas combined cycle. An entrained gasifier which has a capacity of maximum $260,000Nm^3/h$, 50 MW class of a Polymer Electrolyte Membrane Fuel Cell, and H-class Gas Turbine were selected as key processes. After unit design for those employed processes was set up and combined, the simulation was carried out with Gate-Cycle software (Ver. 6.0) for two cases. The selected cases are a retrofit type (Poly-Gen 1) and a new type (Poly-Gen 2). It was found that the efficiency of the retrofit case is 2.7% lower than that of the new case.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.130-136
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• 2002

Device makers want to make higher density chips as devices shrink, especially WSix poly stack down is one of the key issues. However, EPD (End Point Detection) time delay was happened in DPS+ poly chamber which is a barrier to achieve device shrink because EPD time delay killed test pattern and next generation device. To investigate the EPD time delay, a test was done with patterned wafers. This experimental was carried out combined with OES(Optical Emission Spectroscopy) and SEM (Scanning Electron Microscopy). OES was used to find corrected wavelength in WSix stack down gate etching. SEM was used to confirm WSix gate profile and gate oxide damage. Through the experiment, a new wavelength (252nm) line of plasma is selected for DPS+ chamber to call correct EPD in WSix stack down gate etching for current device and next generation device.

• Journal of Sericultural and Entomological Science
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• v.7
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• pp.43-47
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• 1967

The author studied on the character of next generation which was laid from poly copulated female moth. The obtained results are as follows; 1. In the three generous two copulation, selectivity of fertilization and copulating order of silkworm showed like the two generous double copulation and their intensity of fertilization was characterized in the next generation. 2. In the next generation of silkworm, new form and character were not occurred through polygenerous poly copulation. 3. Copulating time influenced on the next generation and the time was related closely tn the copulating type (copulating order) in the three generous two copulation which was differed each copulating time.

• Journal of Photoscience
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• v.7 no.1
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• pp.9-13
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• 2000

An alternately assembled polycation-anionic dye film was prepared on a precursor assembly of poly(allylamine)hydrochloride (PAH) and poly(sodium styrenesulfonate) (PSS) or of poly (djallyldimethyl)ammonium chloride (PDDA) and PSS. The (PAH/PSS) precursor assembly gave better adsorptivity to the anionic dye than the (PDDA/PSS) one. Four kinds of anionic dyes (EB-T, AR-17 AR-18, AR-27) with different numbers of sulfonate substituents were compared. The extent of dye assembling was higher for the dye with a smaller number of sufonate substituents. Second harmonic generation (SHG) was clearly observed from the films. The SHG signal and the absorption intensity correlated well up to four polycation/dye bilayers, while further assembly did not increase the SHG signal appreciably. Second order nonlinear coefficients for ten bilayer assemblies were the order of pm/V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.918-923
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• 1998

Poly-silicon thin film transistors were fabricated on quartz substrates by high temperature processes. Electrical characteristics were measured and compared for 3 transistor structures of Standard Inverted Gate(SIG), Lightly Doped Drain(LDD), and Dual Gate(DG). Leakage currents of DG and LDD TFT's were smaller that od SIG transistor, while ON-current of LDD transistor is much smaller than that of SIG and DG transistors. Temperature dependence of the leakage currents showed that SIG and DG TFT's had thermal generation current at small drian bias and Frenkel-Poole emission current at hight gate and drain biases, respectively. In case of LDD transistor, thermal generation was the dominant mechanism of leakage current at all bias conditions. It was found that the leakage current was closely related to the reduction of the electric field in the drain depletion region.

• Bulletin of the Korean Chemical Society
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• v.14 no.5
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• pp.614-618
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• 1993

The photoacid generation efficiency of four N-hydroxyphthalimide sulfonate derivatives was studied by photo-crosslinking reaction of poly(glycidyl methacrylate) in solid film state. The relative photoacid generation efficiency was increased in the order of N-hydroxyphthalimide methanesulfonate > -toluenesulfonate > -nitrobenzenesulfonate > -dinitrobenzensulfonate, and the reaction was efficiently sensitized by benzophenone suggesting that this photoreactions is likely to proceed through its triplet excited state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.489-492
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• 1999

The effects of alternate bias stress on p-channel poly-Si TPT's has been systematically investigated. It has been shown that the application of alternate bias stress affects device degradation for the negative bias stress as well as device improvement for the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ under bias stress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.683-686
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• 1998

Hot carrier effects as a function of bias stress time and bias stress consitions were syste-matically investigated in p-channel poly-Si TFT s fabricated on the quartz substrate. The device degradation was observed for the negative bias stress, while improvement of electrical characteristic except for subthreshold slope was observed for the positive bias stress. It was found that these results were related to the hot-carrier injection into the gate oxide and interface states at the poly-Si/$SiO_2$interface rather than defects states generation within the poly-Si active layer under bias stress.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.25-28
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• 1994

Weakly electron withdrawing bromine substituted poly(2-bromo-1,4-phenylenevinylene) (PBrPV) was synthesized th-rough water-soluble precursor method. The linear and nonlinear optical properties of PBrPV were compared with those of poly(1,4-phenylenevinylene) (PPV). The third-order nonlinear optical susceptibility, X^{(3)}$, was measured by using third-harmonic generation (THG) technique at 1907 nm, fundamental wavelength. The calculated $X^{(3)}$ values of PPV and PBrPV were 3${\times}$ 10$^{-12}$ esu and 2${\times}$10$^{-12}$ esu, respectively.