• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.24-29
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• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• KEPCO Journal on Electric Power and Energy
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• 제3권2호
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• pp.141-146
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• 2017

In this work, a simulation study on net 500 MW class of Poly-Generation was conducted for the retrofit of an aged natural gas combined cycle. An entrained gasifier which has a capacity of maximum $260,000Nm^3/h$, 50 MW class of a Polymer Electrolyte Membrane Fuel Cell, and H-class Gas Turbine were selected as key processes. After unit design for those employed processes was set up and combined, the simulation was carried out with Gate-Cycle software (Ver. 6.0) for two cases. The selected cases are a retrofit type (Poly-Gen 1) and a new type (Poly-Gen 2). It was found that the efficiency of the retrofit case is 2.7% lower than that of the new case.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.130-136
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• 2002

Device makers want to make higher density chips as devices shrink, especially WSix poly stack down is one of the key issues. However, EPD (End Point Detection) time delay was happened in DPS+ poly chamber which is a barrier to achieve device shrink because EPD time delay killed test pattern and next generation device. To investigate the EPD time delay, a test was done with patterned wafers. This experimental was carried out combined with OES(Optical Emission Spectroscopy) and SEM (Scanning Electron Microscopy). OES was used to find corrected wavelength in WSix stack down gate etching. SEM was used to confirm WSix gate profile and gate oxide damage. Through the experiment, a new wavelength (252nm) line of plasma is selected for DPS+ chamber to call correct EPD in WSix stack down gate etching for current device and next generation device.

• 한국잠사곤충학회지
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• 제7권
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• pp.43-47
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• 1967

가잠 다교배와 차대잠의 형질을 연구하여 다음과 같은 결과를 얻었다. 1. 삼원이교배에 있어서는 이원이중교배와 같이 잠품종적인 수정선택성과 교배순서가 작용하여서 그 수정력이 차대잠 형질에 나타난다. 2. 사원삼교배에 있어서는 보통반문백색견, 용각백색견, 이호백색견 적색잠등을 공시하여 중복교배를 시켰던 바 차대에 모품종과 부품종 이외의 형질잠이나 형질잠은 전혀 나타나지 않았다. 3. 교미시간을 달리한 삼원이교배에서는 교미시간이 차대잠에 영향을 미치며 교미시간의 장단은 교배형식과 밀접한 관계가 있다.

• Journal of Photoscience
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• 제7권1호
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• pp.9-13
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• 2000

An alternately assembled polycation-anionic dye film was prepared on a precursor assembly of poly(allylamine)hydrochloride (PAH) and poly(sodium styrenesulfonate) (PSS) or of poly (djallyldimethyl)ammonium chloride (PDDA) and PSS. The (PAH/PSS) precursor assembly gave better adsorptivity to the anionic dye than the (PDDA/PSS) one. Four kinds of anionic dyes (EB-T, AR-17 AR-18, AR-27) with different numbers of sulfonate substituents were compared. The extent of dye assembling was higher for the dye with a smaller number of sufonate substituents. Second harmonic generation (SHG) was clearly observed from the films. The SHG signal and the absorption intensity correlated well up to four polycation/dye bilayers, while further assembly did not increase the SHG signal appreciably. Second order nonlinear coefficients for ten bilayer assemblies were the order of pm/V.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.918-923
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• 1998

Poly-silicon thin film transistors were fabricated on quartz substrates by high temperature processes. Electrical characteristics were measured and compared for 3 transistor structures of Standard Inverted Gate(SIG), Lightly Doped Drain(LDD), and Dual Gate(DG). Leakage currents of DG and LDD TFT's were smaller that od SIG transistor, while ON-current of LDD transistor is much smaller than that of SIG and DG transistors. Temperature dependence of the leakage currents showed that SIG and DG TFT's had thermal generation current at small drian bias and Frenkel-Poole emission current at hight gate and drain biases, respectively. In case of LDD transistor, thermal generation was the dominant mechanism of leakage current at all bias conditions. It was found that the leakage current was closely related to the reduction of the electric field in the drain depletion region.

• Bulletin of the Korean Chemical Society
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• 제14권5호
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• pp.614-618
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• 1993

The photoacid generation efficiency of four N-hydroxyphthalimide sulfonate derivatives was studied by photo-crosslinking reaction of poly(glycidyl methacrylate) in solid film state. The relative photoacid generation efficiency was increased in the order of N-hydroxyphthalimide methanesulfonate > -toluenesulfonate > -nitrobenzenesulfonate > -dinitrobenzensulfonate, and the reaction was efficiently sensitized by benzophenone suggesting that this photoreactions is likely to proceed through its triplet excited state.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.489-492
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• 1999

The effects of alternate bias stress on p-channel poly-Si TPT's has been systematically investigated. It has been shown that the application of alternate bias stress affects device degradation for the negative bias stress as well as device improvement for the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ under bias stress.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.683-686
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• 1998

Hot carrier effects as a function of bias stress time and bias stress consitions were syste-matically investigated in p-channel poly-Si TFT s fabricated on the quartz substrate. The device degradation was observed for the negative bias stress, while improvement of electrical characteristic except for subthreshold slope was observed for the positive bias stress. It was found that these results were related to the hot-carrier injection into the gate oxide and interface states at the poly-Si/$SiO_2$interface rather than defects states generation within the poly-Si active layer under bias stress.

• Bulletin of the Korean Chemical Society
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• 제15권1호
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• pp.25-28
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• 1994

Weakly electron withdrawing bromine substituted poly(2-bromo-1,4-phenylenevinylene) (PBrPV) was synthesized th-rough water-soluble precursor method. The linear and nonlinear optical properties of PBrPV were compared with those of poly(1,4-phenylenevinylene) (PPV). The third-order nonlinear optical susceptibility, X^{(3)}$, was measured by using third-harmonic generation (THG) technique at 1907 nm, fundamental wavelength. The calculated $X^{(3)}$ values of PPV and PBrPV were 3${\times}$ 10$^{-12}$ esu and 2${\times}$10$^{-12}$ esu, respectively.