• Title/Summary/Keyword: Poly(D

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The Poly-γ-ᴅ-Glutamic Acid Capsule of Bacillus licheniformis, a Surrogate of Bacillus anthracis Capsule Induces Interferon-Gamma Production in NK Cells through Interactions with Macrophages

  • Lee, Hae-Ri;Jeon, Jun Ho;Rhie, Gi-Eun
    • Journal of Microbiology and Biotechnology
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    • v.27 no.5
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    • pp.1032-1037
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    • 2017
  • The poly-${\gamma}$-$\small{D}$-glutamic acid (PGA) capsule, a major virulence factor of Bacillus anthracis, provides protection of the bacterium from phagocytosis and allows its unimpeded growth in the host. We investigated crosstalk between murine natural killer (NK) cells and macrophages stimulated with the PGA capsule of Bacillus licheniformis, a surrogate of the B. anthracis capsule. PGA induced interferon-gamma production from NK cells cultured with macrophages. This effect was dependent on macrophage-derived IL-12 and cell-cell contact interaction with macrophages through NK cell receptor NKG2D and its ligand RAE-1. The results showed that PGA could enhance NK cell activation by inducing IL-12 production in macrophages and a contact-dependent crosstalk with macrophages.

Quaternary D Flip-Flop with Advanced Performance (개선된 성능을 갖는 4치 D-플립플롭)

  • Na, Gi-Soo;Choi, Young-Hee
    • 전자공학회논문지 IE
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    • v.44 no.2
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    • pp.14-20
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    • 2007
  • This paper presents quaternary D flip-flop with advanced performance. Quaternary D flip-flop is composed of the components such as thermometer code output circuit, EX-OR gate, bias inverter, transmission gate and binary D flip-flop circuit. The designed circuit is simulated by HSPICE in $0.35{\mu}m$ one-poly six-metal CMOS process parameters with a single +3.3V supply voltage. In the simulations, sampling frequencies is measured around 100MHz. The PDP parameters and FOM we estimated to be 59.3fJ, 33.7 respectively.

Design of an 8-bit 100KSPS Cyclic Type CMOS A/D Converter with 1mW Power Consumption (1mW의 전력소모를 갖는 8-bit 100KSPS Cyclic 구조의 CMOS A/D 변환기)

  • Lee, Jung-Eun;Song, Min-Kyu
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.9
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    • pp.13-19
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    • 1999
  • This paper describes a design of an 8-bit 100KSPS 1mW CMOS A/D Converter. Using a novel systematic offset cancellation technique, we reduce the systematic offset voltage of operational amplifiers. Further, a new Gain amplifier is proposed. The proposed A/D Converter is fabricated with a $0.6{\mu}m$ single-poly triple-metal n-well CMOS technology. INL and DNL is within ${\pm}1LSB$, and SNR is about 43dB at the sampling frequency of 100KHz. The power consumption is $980{\mu}W$ at +3V power supply.

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The Study of Utilty to 'Rolly Poly 160', Type II diabetes self-management Serious Game, Using Satisfaction Analysis (제2형 당뇨 식이 기능성 게임 '롤리폴리 160'의 효용성 및 만족도 조사 연구)

  • Ahn, Tae-Hong;Yu, Mi-Sun
    • Journal of Korea Game Society
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    • v.19 no.6
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    • pp.107-116
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    • 2019
  • A diabetes self-management serious game, 'Roly Poly 160' is developed for Type II diabetes patients to decrease their blood Sugar level. For verifying the effectiveness of 'Roly Poly 160', we examined the satisfaction survey. Data were collected from the diabetes patients and public those who have used 'Roly Poly 160' through D Community health center and S Community health center in Gwangju, from November, 27, 2018 to December, 4, 2018. 67 people returned the survey through the 'Roly Poly 160' APP. The overall average satisfaction level was 3.7 out of 5.

Electrical characteristics of polycrystalline 3C-SiC thin film diodes (다결정 3C-SiC 박막 다이오드의 전기적 특성)

  • Chung, Gwiy-Sang;Ahn, Jeong-Hak
    • Journal of Sensor Science and Technology
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    • v.16 no.4
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    • pp.259-262
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    • 2007
  • This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

Polymerization and Characterization of Polyesters Using Furan Monomers from Biomass (Biomass 유래 퓨란계 단량체를 이용한 폴리에스터의 중합 및 특성 연구)

  • Seo, Kang-Jin;Kim, Myeong-Jun;Jeong, Ji-Hea;Lee, Young-Chul;Noh, Si-Tae;Chung, Yong-Seog
    • Polymer(Korea)
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    • v.35 no.6
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    • pp.526-530
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    • 2011
  • Furan-2,5-dicarboxylic acid (FDCA) was synthesized by $KMnO_4$ oxidation of 2,5-dihydroxymethylfuran(DHMF) derived from biomass. Polyesters were synthesized by esterification and polycondensation of FDCA with various diols(ethane-1,2-diol, propane-1,3-diol, butane-1,4-diol, hexane-1,6-diol, decane-1,10-diol). The composition of polyesters was characterized by using $^1H$ NMR. Thermal properties of the polyesters were characterized by DSC and TGA. Intrinsic viscosities(IV) of the polyesters were measured to be 0.78~1.2 dL/g comparable with IV of commercial poly(ethylene terephthalate)(PET). As the chain lengths of diols increased, Young's modulus and strength decreased and elongation-to-break generally increased. Young's modulus and strength of the polyesters were measured to be 3551 MPa and 103 MPa, respectively, comparable with commercial PET.

Poly-Si TFT Technology

  • Noguchi, Takashi;Kim, D.Y.;Kwon, J.Y.;Park, Y.S.
    • Information Display
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    • v.5 no.1
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    • pp.25-30
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    • 2004
  • Poly-Si TFT(Thin Film Transistor) technology are reviewed and discussed. Poly-Si TFTs fabricated on glass using low-temperature process were studied extensively for the application to LCD (Liquid Crystal Display) as well as to OLED(Organic Light Emitting Diode) Display. Currently, one of the application targets of the poly-Si TFT is emphasized on the highly functional SOG(System on Glass). Improvement of device characteristics such as an enhancement of carrier mobility has been studied intensively by enlarging the grain size. Reduction of the voltage and shrinkage of the device size are the trend of AM FPD(Active Matrix Flat Panel Display) as well as of Si LSI, which will arise a peculiar issue of uniformity for the device performance. Some approaches such as nucleation control of the grain seed or lateral grain growth have been tried, so far.

Excimer and Aggregate Formations in Poly(fluorene)s

  • Lee, Jeong-Ik;Lee, Victor Y.;Miller, Robert D.
    • ETRI Journal
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    • v.24 no.6
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    • pp.409-414
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    • 2002
  • This paper investigates the absorption and emission changes in poly(di-n-hexylfluorene)s. We prepared the poly(di-n-hexylfluorene)s end capped with 2-bromofluorene, 2-bromo-9,9-di-n-hexylfluorene, and 9-bromoanthracene through Ni (0) mediated polymerization. In addition, we also synthesized a structurally distorted copolymer of 2,7-dibromo- 9,9-di-n-hexylfluorene and 9,9-bis(4-bromophenyl) fluorene end capped with 2-bromofluorene through the same polymerization method. The absorption and emission changes of these polymers between before and after thermal annealing in a nitrogen atmosphere clarify the role of aggregate/excimer formation in poly(fluorene)s. The large absorption changes must be attributed to aggregate formation (ground state interaction), which causes only a slight red shift of the vibronically structured emission bands. We assign the additional long wavelength emission as an excimer band (excited state interaction), which is preferably formed at chain ends.

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Fabrication of poly-crystalline silicon ingot for solar cells by CCCC method (CCCC법에 의한 태양전지용 다결정 실리콘 잉고트의 제조)

  • Shin J. S.;Lee D. S.;Lee S. M.;Moon B. M.
    • 한국신재생에너지학회:학술대회논문집
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    • 2005.06a
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    • pp.94-97
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    • 2005
  • For the fabrication of poly-crystalline silicon ingot, CCCC (Cold Crucible Continuous Casting) method under a high frequency alternating magnetic field, was utilized in order to prevent crucible consumption and ingot contamination and to increase production rate. In order to effectively and continuously melt and cast silicon, which has a high radiation heat loss due to the high melting temperature and a low induction heating efficiency due to a low electric conductivity, Joule and pinch effects were optimized. Throughout the present investigation, poly-crystalline Si ingot was successfully produced at the casting speed of above 1.5 mm/min under a non-contact condition.

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