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Poly-Si TFT Technology  

Noguchi, Takashi (Sungkyunkwan University(previous affiliation: IEF (CNRS), Univ. Paris-sud, France))
Kim, D.Y. (SAIT(Samsung Advanced Institute of Technology))
Kwon, J.Y. (SAIT(Samsung Advanced Institute of Technology))
Park, Y.S. (SAIT(Samsung Advanced Institute of Technology))
Publication Information
Information Display / v.5, no.1, 2004 , pp. 25-30 More about this Journal
Abstract
Poly-Si TFT(Thin Film Transistor) technology are reviewed and discussed. Poly-Si TFTs fabricated on glass using low-temperature process were studied extensively for the application to LCD (Liquid Crystal Display) as well as to OLED(Organic Light Emitting Diode) Display. Currently, one of the application targets of the poly-Si TFT is emphasized on the highly functional SOG(System on Glass). Improvement of device characteristics such as an enhancement of carrier mobility has been studied intensively by enlarging the grain size. Reduction of the voltage and shrinkage of the device size are the trend of AM FPD(Active Matrix Flat Panel Display) as well as of Si LSI, which will arise a peculiar issue of uniformity for the device performance. Some approaches such as nucleation control of the grain seed or lateral grain growth have been tried, so far.
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1 1. S. Morozumi et al., Digest of SID, p. 156 (1983)
2 T. Noguchi, H. Tsukamoto, T. Suzuki and H. Masuya, Extended Abstracts of the International Conference on SSDM, p. 620 (1991)
3 H. Hamada, Y. Aya, H. Abe, T. Nouda, K. Hirano and Y. Miyai, Proc. of Ele. Chem. Soc., 98-22, p. 11 (1998)
4 A. J. Tang, J. A. Tsai and R. Reif, and T. J. King, IEDM 20. 2. 1, P. 513 (1995)
5 R. S. Sposili, and J. S. Im, Appl. Phys. Lett. 69, p. 2864 (1996)   DOI   ScienceOn
6 D. Y. Kim, K. B. Park, J. Y. Kwon, J. S. Jung, W Xianyu, Y. S. Park, and T. NOGUCHI, IMID'O3 DIGEST, p. 657 (2003)
7 L. Mariucci, R. Carluccio, A. Pecora, V. Foglietti, G. Fortunato, D. D. Sala, Digest of Technical papers on AM-LCD, p.283 (1999)
8 S. Usui, T. Sameshima and M. Hara, Optoelec-tronics Devies and Technologies 4, p.235 (1989)
9 J.Jang and K. W. Kim, Digest of Technical papers of AM-LCD, p.235 (1999)
10 J. Kannicki and J-H. Kim, Digest of Technical papers of AM- LCD, p.81 (2002)
11 A. Asano and T. Kinoshita, SID'02 DIGEST, p. 1196 (2002)
12 T. Noguchi, K. Tajima and Y. Morita, Mat. Res. Soc. Symp.Proc. 146, p.35 (1989)   DOI
13 T. Asano, T. Aoto and Y. Okada, JPn. J. Appl. Phys. 36, p. 1415 (1997)   DOI
14 S. Utsunomiya, T. Saeki, S. Inoue and T. Shimoda, Digest of Technical papers on AM-LCD, p.37 (2002)
15 T. Noguchi, A. J. Tang, J. A. Tsai and R. Reif, Mat. Res. Soc. Symp. Proc. 403, p. 357 (1996)
16 N.D. Young, D. J. Mcculoch and R. M. Bunn, Digest of Technical papers on AM-LCD, p.47 (1997)
17 F. Omata and T. Serikawa, Digest of Technical papers on AM-LCD'99, p.243 (1999)
18 D. J. Dimaha, E. Cartier, and D. Arnold, J. Appl. Phys. 73, p. 3367 (1993)   DOI   ScienceOn
19 J. Y. Seto, J. Appl. Phys. 46, p.5247 (1975)   DOI   ScienceOn
20 T. Noguchi, D. P. Gosain, S. Usui and Y. Ikeda, Mat. Res. Soc. Symp. Proc. 557, p.213 (1999)   DOI
21 Y. W. Kim, S-R. Lee and O-K. Kwon, IMID'02 DIGEST, p. 167 (2002)
22 H. Wang, M. Chan, S. Jager, V. M. C. Poon, M. Qin, Y. Wang and P. K. Ko, IEEE Trans. Electron Dev. Lett., 47, p. 1580 (2000)   DOI   ScienceOn
23 Digest of Technical papers on AM-LCD, p. 71-88 (2001)
24 M. K. Han and I. H. Song, Digest of Technical papers on AM-LCD, p. 75 (2003)
25 A. Hara, F. Takeuchi, M. Takei, K. Suga, K. Yoshino, M. Chida, Y. Sano and N. Sasaki, Digest of Technical papers on AM-LCD, p.227 (2002)
26 N. Yamauchi, J.-J. J. Hajar and R. Reif, IEEE Trans. Electron Devices 38, p. 55 (1991)   DOI   ScienceOn
27 T. Noguchi, H. Hayashi and T. Ohshima, Jpn. J. Appl. Phys. 28, p. 146 (1989)   DOI
28 J. G. Fossum, A. Orititz-Conde, H. Shichijo and S. K. Banjerjee, IEEE Trans. Ele. Dev. ED-32, p. 1878 (1985)
29 Noguchi and Y. Kanaishi, IEEE Ele. Dev. Lett. 10, p.543 (1989)   DOI   ScienceOn
30 K-J. Kramer. S. Talwar, A. M. MaCarthy and K. H. Weimer, IEEE Trans. Electron Dev. Lett. 17, p. 4561 (1996)
31 T. Noguchi, IMID'Ol DIGEST, p.731 (2001)
32 R. B. Iverson and R. Reif, J. Appl. Phys., 57, p. 5169 (1985)   DOI
33 H. Kuriyama, T. Nohda, S. Ishida, T. Kuwahara, S. Noguchi, S. K.iyama, S. Tsuda and S. Nakano JPn. J. Appl. Phys. 32, p.6190 (1993)   DOI
34 S. V. Nguyen, IBM J. Res. Dev. p. 43, 109 (1999)
35 S D Brotherton, S-G Lee, C. Glasse, J R Ayres and C Glaister, IDW'02, p.283 (2002)
36 T. Katoh, IEEE Trans. Elec. Dev. 35, p. 923 (1998)
37 T. Ohno, Y. Uraoka, T. Hatayama, T. Fuyuki, Y. Morita, Tech. Report of IEICE, ED2000-7, SDM 2000-7, p. 43 (2000-04)
38 H. Kumomi, T. Yonehara and T. Noma, Appl. Phys. Lett. 59, p.3565 (1991)   DOI
39 M. Tai, M. Hatano, S. Yamaguchi, S. K. Park, T. Noda, M. Hongo, T. Shiba and M. Ohkura, Digest of Technical papers on AM-LCD, p.231 (2002)
40 D.P. Gosain, T. Noguchi and S. Usui, Jap.Jpn. Appl. Phys., 39, p.L179 (2000)   DOI   ScienceOn
41 N. Matsuo and H. Hamada, Tech. Report of IEICE, ED2000-13, SDM 2000-13, p.21 (2000-04)
42 T. Noguchi and Y. Ikeda, Proc. of Sony Research Forum, p. 200 (1992)
43 M. A. Crowder, P. G. Caray, P. M. Smith, R. S. Sposili, H. S. Cho and J. S. Im, IEEE Trans. Ele. Dev. Lett., 19, p. 306 (1998)   DOI   ScienceOn
44 T. Noguchi, Jpn. J. Appl. Phys. 32, p. L1587 (1993)