• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.125-128
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• 2004

Chemical Mechanical Polishing(CMP) in semiconductor production is characterized its output property by Removal Rate(RR) and Non-Uniformity(NU). Some Previous works shows that RR is determined by production of pressure and velocity and NC is also largely affected by velocity of flow-field during CMP. This study is about the direct measurement of velocity of slurry during CMP and reconstruction whole flow-field by Particle Image Velocimetry(PIV) Techniques. Typical PIV system is tuned adequately for inspecting CMP and Slurry Flow-field is measured by changing both Pad RPM and Carrier RPM. The results show that velocity is majorly determined not by Carrier RPM, but by Pad RPM.

• Design & Manufacturing
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• v.13 no.3
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• pp.12-18
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• 2019

Fluid jet polishing is a method of jetting a fluid to polish a concave or free-form surface. However, the fluid jet method is difficult to form a stable polishing spot because of the lack of concentration. In order to solve this problem, MR fluid jet polishing system using an abrasive mixed with an MR fluid whose viscosity changes according to the intensity of a magnetic field is under study. MR fluid jet polishing is not easy to formulate for precise optimal conditions and material removal due to numerous fluid compositions and process conditions. Therefore, in this paper, quantitative data on the factors that have significant influence on the machining conditions are presented using various simulations and the correlation studies are conducted. In order to verify applicability of the fabricated MR fluid jet polishing system by nozzle diameter, the flow pattern and velocity distribution of MR fluid and polishing slurry of MR fluid jet polishing were analyzed by flow analysis and shear stress due to magnetic field changes was analyzed. The MR fluid of the MR fluid jet polishing and the flow pattern and velocity distribution of the polishing slurry were analyzed according to the nozzle diameter and the effects of nozzle diameter on the polishing effect were discussed. The analysis showed that the maximum shear stress was 0.45 mm at the diameter of 0.5 mm, 0.73 mm at 1.0 mm, and 1.24 mm at 1.5 mm. The cross-sectional shape is symmetrical and smooth W-shape is generated, which is consistent with typical fluid spray polishing result. Therefore, it was confirmed that the high-quality surface polishing process can be stably performed using the developed system.

• 한국가시화정보학회:학술대회논문집
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• 2004.11a
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• pp.48-51
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• 2004

Chemical Mechanical Polishing(CMP) is popularly used in production of semiconductor because of large area polishing ability probability of improvement for more integrated circuit. However, present CMP processing causes some non-uniformity errors which can be critical for highly integrated circuit. Previous studies predict that flow-field of slurry during CMP can create non-uniformity, but no quantitative measurement has conducted. In this study, using PIV, slurry velocity flow-field during CMP is measured by changing the ratio of RPM of pad and carrier with tuned PIV system adequate for small room in CMP machine and Cabot's non-groove pad Epad-A100. The result show that velocity of slurry is majorly determined by pad-rpm and the ratio of between carrier and pad rpm make some changes in streamlines.

• Transactions of the Korean Society of Automotive Engineers
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• v.12 no.6
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• pp.151-157
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• 2004

In this paper deals with behavior of the magnetic abrasive using sludge on polishing characteristics in a new internal finishing of seamless stainless steel tube applying magnetic abrasive polishing. The magnetic abrasive using sludge-abrasive grain WA and GC used to resin bond fabricated low temperature. And sludge of magnetic abrasive powder fabricated that sludge was crused into 200 mesh. The previous research have made an experiment in the static state the movement of magnetic abrasive grain is nevertheless in the dynamic state. In this paper, We could have investigated into the changes of the movement of magnetic abrasive grain. In reference to this result, we could have made the experiment which is set under the condition of the magnetic flux density, polishing velocity according to the form of magnetic brush.

• International Journal of Precision Engineering and Manufacturing
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• v.3 no.4
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• pp.43-53
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• 2002

Polishing a die that has free-form surfaces is a time-consuming and tedious job, and requires a considerable amount of high-precision skill. In order to reduce the polishing time and cope with the shortage of skilled workers, a user-friendly automatic polishing system was developed. The polishing system is composed of two subsystems, a three-axis machining center and a two-axis polishing robot. The system has five degrees of freedom and is able to keep the polishing tool in a position normal to the die surface during operation. A sliding mode control algorithm with velocity compensation was proposed to reduce tracking errors. Trajectory tracking experiments showed that the tracking error can be reduced prominently by the proposed sliding mode control compared to a PD (proportional derivative) control. To evaluate the polishing performance of the polishing system and to and the optimal polishing conditions, the polishing experiments were conducted.

• International Journal of Control, Automation, and Systems
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• v.6 no.3
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• pp.386-393
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• 2008

A position control method for interpolating aspherical grinding and polishing tool path was reviewed and experimented in a nano precision machine. The position-base algorithm was reformed from the time-base algorithm, proposed in the previous study. The characteristics of the algorithm were in the velocity control loop with position feedback. The aspherical surface was divided by an interval at which each velocity and acceleration were calculated. The theoretical velocity was corrected by position error during processing. In the experiment, a machine was constructed and nano-scale linear encoders were installed at each axis. Relation between process parameters and the variation of position error was monitored and discussed. The best result from optimized parameters showed that the accuracy was 150nm and improved from the previous report.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.311-315
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• 2001

This paper presents the result of basic study about corrective polishing for arbitrary surface figure. In this study, we researched polishing characteristics on the working condition of optical glass. The abrasive size, relative velocity and working pressure were selected major factors that affect polishing process. The Preston's equation which is the representative model of polishing process was used to model the unit removal shape. The Preston's coefficient and unit removal function were calculated from the polished surface. Applying these results, we have shown that the systematic corrective polishing of arbitary figure is feasible through experiments and analysis.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.5
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• pp.39-39
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• 2003

As the design rules in semiconductor manufacturing process become more and more stringent, the higher degree of planarization of device surface is required for a following lithography process. Also, it is great challenge for chemical mechanical polishing to achieve global planarization of 12” wafer or beyond. To meet such requirements, it is essential to understand the CMP equipment and process itself. In this paper, authors suggest the velocity distribution on the wafer, direction of friction force and the uniformity of velocity distribution of conventional rotary CMP equipment in an analytical method for an intuitive understanding of variation of kinematic variables. To this end, a novel dimensionless variable defined as “kinematic number” is derived. Also, it is shown that the kinematic number could consistently express the velocity distribution and other kinematic characteristics of rotary CMP equipment.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.5
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• pp.29-38
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• 2003

As the design rules in semiconductor manufacturing process become more and more stringent, the higher degree of planarization of device surface is required for a following lithography process. Also, it is great challenge for chemical mechanical polishing to achieve global planarization of 12” wafer or beyond. To meet such requirements, it is essential to understand the CMP equipment and process itself. In this paper, authors suggest the velocity distribution on the wafer, direction of friction force and the uniformity of velocity distribution of conventional rotary CMP equipment in an analytical method for an intuitive understanding of variation of kinematic variables. To this end, a novel dimensionless variable defined as “kinematic number” is derived. Also, it is shown that the kinematic number could consistently express the velocity distribution and other kinematic characteristics of rotary CMP equipment.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.525-529
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• 1999

A cone shape drum polisher was developed to make up for the demerits of conventional CMP apparatus. The developed equipment has several superiorities. First of all, it can achieve uniform velocity profile on all the contact line because of its shape and easy to control the amount of slurry at the position of use. The whole area of wafer surface is exposed to the visual area except the contact line between wafer and drum, hence we can detect polishing end point more easily than any other polishing equipments. Also it has additional merits such as small foot print and polishing load. Polishing characteristics were investigated by developed equipment.