Visualization of the Slurry Flow-Field during Chemical Mechanical Polishing by PIV

PIV를 이용한 Chemical Mechanical Polishing 공정 중의 연마용액 유동흐름 측정

  • 신상희 (서울대학교 기계항공공학부 대학원) ;
  • 김문기 (서울대학교 기계항공공학부) ;
  • 윤영빈 (서울대학교 기계항공공학부) ;
  • 고영호 (삼성전자 공정개발팀)
  • Published : 2004.11.01


Chemical Mechanical Polishing(CMP) is popularly used in production of semiconductor because of large area polishing ability probability of improvement for more integrated circuit. However, present CMP processing causes some non-uniformity errors which can be critical for highly integrated circuit. Previous studies predict that flow-field of slurry during CMP can create non-uniformity, but no quantitative measurement has conducted. In this study, using PIV, slurry velocity flow-field during CMP is measured by changing the ratio of RPM of pad and carrier with tuned PIV system adequate for small room in CMP machine and Cabot's non-groove pad Epad-A100. The result show that velocity of slurry is majorly determined by pad-rpm and the ratio of between carrier and pad rpm make some changes in streamlines.