Visualization of the Slurry Flow-Field during Chemical Mechanical Polishing by PIV

PIV를 이용한 Chemical Mechanical Polishing 공정 중의 연마용액 유동흐름 측정

Chemical Mechanical Polishing(CMP) is popularly used in production of semiconductor because of large area polishing ability probability of improvement for more integrated circuit. However, present CMP processing causes some non-uniformity errors which can be critical for highly integrated circuit. Previous studies predict that flow-field of slurry during CMP can create non-uniformity, but no quantitative measurement has conducted. In this study, using PIV, slurry velocity flow-field during CMP is measured by changing the ratio of RPM of pad and carrier with tuned PIV system adequate for small room in CMP machine and Cabot's non-groove pad Epad-A100. The result show that velocity of slurry is majorly determined by pad-rpm and the ratio of between carrier and pad rpm make some changes in streamlines.