• 제목/요약/키워드: Polishing rate

검색결과 398건 처리시간 0.026초

자기유변유체를 이용한 연마가공 시스템 (A Magnetorheological Polishing System)

  • 김영민;신영재;이응숙;이동주
    • 한국공작기계학회:학술대회논문집
    • /
    • 한국공작기계학회 2003년도 추계학술대회
    • /
    • pp.324-328
    • /
    • 2003
  • The Magnetoeheological fluid has the properties that it's viscosity has dramastic changed under some magnetic fields therefore, Magnetorhlogical fluids has been used for micro polishing of the micro part( for example, a aspherical surface in a micro lens). The polishing process may appears as follows. A part rotating on the spindle is brought into contact with an Magnetorhological finshing(MRF) fluids which is set in motion by the moving wall. In the region where the part and the MRF fulid ate brought into contact, the applied magnetic field creates the conditions necessary for the material removal from the part surface. The material removal takes place in a certain region contacting the surface of the part which can be called the polishing spot or zone. The polishing mechanism of the material removal in the contact zone is considered as a process governed by the particularities of the Bingham flow in the contact zone. Resonable calculated and experimental magnitudes of the material removal rate f3r glass polishing lends support the validity of the approach.

  • PDF

요동형 공구와 AE센서를 이용한 연마면 향상에 관한 연구 (A study on the improvement of polishing surface using Oscillation-type tool and AE sensor)

  • 김정욱;김성렬;안중환
    • 한국정밀공학회:학술대회논문집
    • /
    • 한국정밀공학회 2003년도 춘계학술대회 논문집
    • /
    • pp.1682-1687
    • /
    • 2003
  • Die polishing technology is very critical to determine quality and performance of the final products. Generally, the rotation-type tool is used most widely in the polishing process. However it is difficult to make the mirror surface, because the method using the rotation-type tool causes a lot of tiny scratch on the polished surface. This paper proposes a new method using the oscillation-type tool that reduces the scratch and improves the surface roughness. As result. the mirror surface was able to obtain by using the oscillation-type tool. AE is known to be closely related to material removal rate(MRR). As the surface is rougher, MRR gets larger and AE increase. The surface roughness can be indirectly estimated using the AE signal measured during automatic die polishing process. In this study. an AE sensor based monitoring system was developed to investigate the relation the level of AE RMS with the surface roughness during polishing process.

  • PDF

자성 유체를 이용한 미세연마가공의 원리 (The Principle of Magnetorheological finishing for a micro part)

  • 김동우;신영재;이응숙;조명우
    • 한국정밀공학회:학술대회논문집
    • /
    • 한국정밀공학회 2003년도 춘계학술대회 논문집
    • /
    • pp.1840-1843
    • /
    • 2003
  • The Magnetorheological fluid has the properties that its viscosity has drastic changed under some magnetic fields therefore, Magnetorheological fluids has been used for micro polishing of the micro part( for example, a aspherical surface in a micro lens). The polishing process may appears as follows. A part rotating on the spindle is brought into contact with an Magnetorheological finishing(MRF) fluids which is set in motion by the moving wall. In the region where the part and the MRF fluid ate brought into contact, the applied magnetic field creates the conditions necessary for the material removal from the part surface. The material removal takes place in a certain region contacting the surface of the part which can be called the polishing spot or zone. The polishing mechanism of the material removal in the contact zone is considered as a process governed by the particularities of the Bingham flow in the contact zone. Resonable calculated and experimental magnitudes of the material removal rate for glass polishing lends support the validity of the approach.

  • PDF

미세표면 평활화를 위한 진동 전기화학 폴리싱 (Vibration Electrochemical Polishing for Localized Surface Leveling)

  • 김욱수;김영빈;박정우
    • 한국정밀공학회지
    • /
    • 제30권2호
    • /
    • pp.148-153
    • /
    • 2013
  • This study demonstrates a novel hybrid surface polishing process combining non-traditional electrochemical polishing(ECP) with external artificial ultrasonic vibration. ECP, typical noncontact surface polishing process, has been used to improve surface quality without leaving any mechanical scratch marks formed by previous mechanical processes, which can polish work material by electrochemical dissolution between two electrodes surfaces. This research suggests vibration electrochemical polishing(VECP) assisted by ultrasonic vibration for enhancing electrochemical reaction and surface quality compared to the conventional ECP. The localized roughness of work material is measured by atomic force microscopy(AFM) for detailed information on surface. Besides roughness, overall surface quality, material removal rate(MRR), and productivity etc. are compared with conventional ECP.

자기유변유체를 이용한 연마가공 시스템의 개발 (The Development of Polishing System a Magnetorheological Fluids)

  • 신영재;김동우;이응숙;김경웅
    • 한국정밀공학회지
    • /
    • 제21권7호
    • /
    • pp.46-52
    • /
    • 2004
  • The Magnetorheological fluid has the properties that its viscosity has drastic changed under some magnetic fields therefore, Magnetorheological fluids has been used fur micro polishing of the micro part(for example, a spherical surface in a micro lens). The polishing process may appears as follows. A part rotating on the spindle is brought into contact with an Magnetorheological finishing(MRF) fluids which is set in motion by the moving wall. In the region where the part and the MRF fluid are brought into contact, the applied magnetic field creates the conditions necessary for the material removal from the part surface. The material removal takes place in a certain region contacting the surface of the part which can be called the polishing spot or zone. The polishing mechanism of the material removal in the contact zone is considered as a process governed by the particularities of the Bingham flow in the contact zone. Resonable calculated and experimental magnitudes of the material removal rate for glass polishing lends support the validity of the approach.

패드 그루브의 밀도변화가 연마특성에 미치는 영향 (The Effect of Pad Groove Density on CMP Characteristics)

  • 박기현;정재우;이현섭;서헌덕;정석훈;이상직;정해도
    • 한국정밀공학회지
    • /
    • 제22권8호
    • /
    • pp.27-33
    • /
    • 2005
  • Polishing pads play an important role in chemical mechanical polishing(CMP) which has recently been recognized at the most effective method to achieve global planarization. In this paper, we have investigated CMP characteristics as a change of groove density of polishing pads. The parameter $(K_n)$ is proposed to estimate groove density of pad. The $K_n$ is defined as groove area divided by pitch area. As the groove density value increased, removal rate increased to some point and then gradually saturated in case of increasing the groove density excessively. In addition Within wafer non-uniformity(WIWNU) worse as groove density increased excessively, although WIWNU improved as groove density increased. Also the uniformity of temperature of pad surface decreased as the groove density increased. It was because that the cooling effect increased as groove density increased. In other words, increasing the groove density which means the apparent contact area of pad has influence on amount of discharge of slurry during polishing process.

CMP시 SiO2 슬러리의 마찰 특성과 연마결과에 관한 연구 (A Study on Frictional Characteristics and Polishing Result of SiO2 Slurry in CMP)

  • 이현섭;박범영;서헌덕;정재우;정석훈;정해도
    • 대한기계학회논문집A
    • /
    • 제29권7호
    • /
    • pp.983-989
    • /
    • 2005
  • The effects of mechanical parameters on the characteristics of chemical mechanical polishing(CMP) can be directly evaluated by friction force. The piezoelectric quartz sensor for friction force measurement was installed, and friction force could be detected during CMP process. Furthermore, friction energy can be calculated by multiplying relative velocity by integration of the friction force throughout the polishing time. $SiO_2$ slurry for interlayer dielectric(ILD) CMP was used in this experiment to consider the relation of frictional characteristics and polishing results. From this experiment, it is proven that the friction energy is an essential factor of removal rate. Also, the friction force is related to removal amount per unit length(dH/ds) and friction energy has corelation to the removal rate(dH/dt) and process temporature. Moreover, within wafer non-unifornity(WIWNU) is related to coefficient of friction because of the mechanical moment equilibrium. Therefore, the prediction of polishing result would be possible by measuring friction force.

MR 유체 제트 연마를 이용한 광학유리의 가공성능 (Machining Performance of Optical Glass with Magnetorheological Fluid Jet Polishing)

  • 김원우;김욱배
    • 한국정밀공학회지
    • /
    • 제28권8호
    • /
    • pp.929-935
    • /
    • 2011
  • As a deterministic finishing process for the optical parts having complex surface, machining performance of the magnetorheological(MR) fluid jet polishing of optical glass are studied and compared with a general water jet polishing. First, design of the jet polishing system which has the special electromagnet-nozzle unit for stabilizing the slurry jet based on MR fluid and the change of jet shape as magnetic field is applied are explained. Second, for the BK7 glass, machining spot and its cross section profile are analyzed and the unique effect of MR fluid jet polishing is shown. Third, both material removal depth and surface roughness are explored in order to investigate the polishing performance of MR fluid jet. With the same ceria abrasives and amount in the polishing slurries, MR fluid jet shows superior machining performance compared to water jet and the difference of material removal mechanism and its resulting performance are described.

CFD를 이용한 CMP장비의 효과적인 공정을 위한 수치해석적 연구 (A Numerical Analysis Using CFD for Effective Process at CMP Equipment)

  • 이수연;김광선
    • 반도체디스플레이기술학회지
    • /
    • 제10권4호
    • /
    • pp.139-144
    • /
    • 2011
  • CMP process is an essential element in the semiconductor product processes in Chemical Mechanical Polishing. Taken as a whole, CMP is one process, but concretely, it is a detail process which consists of polishing, cleaning, and so on. Especially, the polishing and cleaning are key points in the whole process. Polishing rate is the most important factor and is related with deposition of slurry in the polishing process. Each outlet velocities is the most important factors in cleaning process. And when the velocities are more uniform, the cleaning becomes more effective. In this research, based on these factors, we performed a numerical analysis for effective polishing and cleaning which can be applied to industrial field. Consequently, we figured out that more than one opened nozzle is more effective than one opened nozzle at the polishing pad in case of this research. And we confirmed that the revised models have the uniform velocity distribution more than the previous model of the cleaning nozzle.

산화막 CMP에서 패드 두께가 연마율과 연마 불균일도에 미치는 영향 (Effect of Pad Thickness on Removal Rate and Within Wafer Non-Uniformity in Oxide CMP)

  • 배재현;이현섭;박재홍;니시자와 히데키;키노시타 마사하루;정해도
    • 한국전기전자재료학회논문지
    • /
    • 제23권5호
    • /
    • pp.358-363
    • /
    • 2010
  • The polishing pad is important element for polishing characteristic such as material removal rate(MRR) and within wafer non-uniformity(WIWNU) in the chemical mechanical planarization(CMP). The result of the viscoelasticity measurement shows that 1st elastic modulus is increased and 2nd elastic modulus is decreased when the top pad is thickened. The finite element analysis(FEA) was conducted to predict characteristic of polishing behavior according to the pad thickness. The result of polishing experiment was similar with the FEA, and it shows that the 1st elastic modulus affects instantaneous deformation of pad related to MRR. And the 2nd elastic modulus has an effect on WIWNU due to the viscoelasticity deformation of pad.