• Title/Summary/Keyword: Polishing equipment

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Plasma electrolytic processing for polishing of stainless steel surfaces

  • Van, Thanh Dang;Kim, Sung-W.;Kim, Jong-R.;Kim, Sang-G.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.137-137
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    • 2008
  • This paper presents the ability of plasma electrolytic polishing technology to polish surface of stainless steel materials. The results show that the surface of its can be polished clearly using potentiostatic regimes in various concentration of $(NH_4)_2SO_4$ solution that had been warmed to a certain initial temperature. The equipment and deposition produces for polishing process are described and the effect of processing parameters on the characterizations polishedsamples has been has been investigated.

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Effects of Insert Materials of Retaining Ring on Polishing Finish in Oxide CMP (산화막 CMP에서 리테이닝 링의 인서트 재질이 연마정밀도에 미치는 영향)

  • Park, Ki-Won;Park, Dong-Sam
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.18 no.8
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    • pp.44-50
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    • 2019
  • CMP is the most critical process in the manufacture of silicon wafers, and the use of retaining rings, which are consumable parts used in CMP equipment, is increasingly important. Since the retaining ring is made of plastic, it is not only weak in strength but also has the problem of taking a long time for the flattening operation of the ring itself performed before the CMP process, and of the imbalance of force due to bolt tightening causing uneven wear. In order to solve this problem, the retaining ring and the insert ring are integrally used, and the flatness of the retaining ring may be affected depending on the material of the insert ring. Also, the residual stress generated in the manufacturing process of the insert ring may cause distortion of the ring, which may adversely affect the precision polishing. In this study, when the insert ring is made of Zn or STS304, the thickness variation and the flatness of the retaining ring are compared and, finally, the material removal rate is analyzed by polishing the wafer by the oxide CMP process. Through these experiments, the effects of the insert ring material on the polishing accuracy of the wafers were investigated.

Observation of machining and polishing according to the dental barrel polishing time (치과용 바렐연마의 시간에 따른 가공도 및 연마도 관찰)

  • Hyeon-jeong Ko;Sung-min Choi
    • Journal of Technologic Dentistry
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    • v.45 no.4
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    • pp.87-94
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    • 2023
  • Purpose: This study aimed to observed changes in the shape of dental barrels based on application time. Machinability measures the angle of alloy specimens. Polishing performance measures the surface roughness of alloy specimens. Methods: The dental barrel polishing equipment used in this study was a Snow Barrel (DK Mungyo). Three types of cobalt-chromium alloys for partial dentures were used as specimens (BC CAST R [BP]; Bukwang, Vera PDI [VP]; Aalbadent, and GM 800+ [GP]; Dentaurum). Specimens were prepared in the form of plates (10 mmx10 mmx2 mm). Dental barrel polishing was performed at 450 rpm for 60 minutes with intervals of 5 minutes. The processing angle was measured using a microscope (SZ61; Olympus). Results: For the angle measurement, the VPC specimen was measured at 78.64°, 36.00° for the VP60 specimen, 79.57° for the BP control (BPC) specimen, 28.07° for the BP60 specimen, 75.01° for the GPC specimen, and 39.92° for the GP60 specimen. For the surface roughness measurements, the average surface roughness of the VPC and VP15 specimens were 1.09 ㎛ and 0.26 ㎛, respectively. The average surface roughness of the BPC and BP20 specimens were 1.77 ㎛ and 0.29 ㎛, respectively. The average surface roughness of the GPC and GP15 specimens were 1.08 ㎛ and 0.27 ㎛. Conclusion: The results were excellent after about 20 minutes of dental barrel polishing conditions presented in this study.

Evaluation on the Rlationship between Wear Ratio and Polarization Characteristics of Anti-Fouling Paint (방오도료 도막의 마모율과 분극특성의 상관관계에 관한 평가)

  • Jeong, Jae-Hun;Moon, Kyung-Man;Won, Jong-Pil;Park, Dong-Hyun;Kim, Yun-Hae;Kim, Hyun-Myung;Lee, Myeong-Hoon;Baek, Tae-Sil
    • Corrosion Science and Technology
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    • v.13 no.1
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    • pp.15-19
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    • 2014
  • Recently, anti-fouling paints which does not include the poison components such as tin(Sn), copper(Cu) have been increasingly developed in order to inhibit the environmental contamination of the sea water. Moreover, the wear ratios of these anti-fouling paints are very important problem to prolong their life time in economical point of view. In this study, five types of anti-fouling paints as self polishing type were investigated on the relationship between their polarization characteristics and wear ratios. It was verified that there was apparently a good relationship between the wear ratio and polarization characteristics, for example, the wear ratio increased with increasing the impedance ratio, and increased or decreased with the corrosion potential shifting in the negative or positive direction respectively. In addition, the wear ratio decreased with decreasing the corrosion current density. Consequently, it is suggested that we can qualitatively expect the wear ratio by only measuring the polarization characteristics. Therefore, before the examination of the wear ratio was actually carried out in the field, the evaluation of polarization property in the laboratory may give a available reference data for their developments.

Profile Simulation in Mono-crystalline Silicon Wafer Grinding (실리콘 웨이퍼 연삭의 형상 시뮬레이션)

  • Kim Sang Chul;Lee Sang Jik;Jeong Hae Do;Choi Heon Zong;Lee Seok Woo
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.10
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    • pp.26-33
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    • 2004
  • Ultra precision grinding technology has been developed from the refinement of the abrasive, the development of high stiffness equipment and grinding skill. The conventional wafering process which consists of lapping, etching, 1 st, 2nd and 3rd polishing has been changed to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Furthermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focuses on the flatness of the ground wafer. Generally, the ground wafer has concave pronto because of the difference of wheel path density, grinding temperature and elastic deformation of the equipment. Wafer tilting is applied to avoid non-uniform material removal. Through the geometric analysis of wafer grinding process, the profile of the ground wafer is predicted by the development of profile simulator.

Effect of Abrasive Particles on Frictional Force and Abrasion in Chemical Mechanical Polishing(CMP) (CMP 연마입자의 마찰력과 연마율에 관한 영향)

  • Kim, Goo-Youn;Kim, Hyoung-Jae;Park, Boum-Young;Lee, Hyun-Seop;Park, Ki-Hyun;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.10
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    • pp.1049-1055
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    • 2004
  • Chemical Mechanical Polishing (CMP) is referred to as a three body tribological system, because it includes two solids in relative motion and the CMP slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason not only for the friction force but also for material removal during polishing, the friction force generated during CMP process was investigated with the change of abrasive size and concentration of CMP slurry. The threshold point of average coefficient of friction (COF) with increase in abrasives concentration during interlayer dielectric (ILD) CMP was found experimentally and verified mathematically based on contact mechanics. The predictable models, Mode I (wafer is in contact with abrasives and pad) and Mode II (wafer is in contact with abrasives only), were proposed and used to explain the threshold point. The average COF value increased in the low abrasives concentration region which might be explained by Mode I. In contrast the average COF value decreased at high abrasives concentration which might be regarded to as Mode II. The threshold point observed seemed to be due to the transition from Mode I to Mode II. The tendency of threshold point with the variation of abrasive size was studied. The increase of particle radius could cause contact status to reach transition area faster. The correlation between COF and material removal rate was also investigated from the tribological and energetic point of view. Due to the energy loss by vibration of polishing equipment, COF value is not proportional to the material removal rate in this experiment.

Modeling of the Conditioning Process in Chemical Mechanical Polishing (컨디셔닝 공정의 수학적 모델링)

  • Chang, One-Moon;Park, Ki-Hyun;Lee, Hyun-Seop;Jung, Won-Duck;Park, Sung-Min;Park, Boum-Young;Seo, Heon-Deok;Kim, Hyoung-Jea;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.569-570
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    • 2006
  • The conditioning process is very important process for the CMP (Chemical Mechaning Polishing). This process regenerates the roughness of the polishing pad during the CMP process, increases the MRR (Material Removal Rate) and gives us longer pad life so conditioning process is essential for the CMP, and conditioning process influences the polishing pad shape gradually. Conditining process is related to the Non-Uniformity. In This paper, Kinematic of the conditioning process and mathematic modeling of the pad wear is studied and result shows how the various parameters influence the pad shape and WIWNU[1]. Consequently through these parameter, optimal design of the conditioning process equipment is predicted.

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Dishing and Erosion Evaluations of Tungsten CMP Slurry in the Orbital Polishing System

  • Lee, Sang-Ho;Kang, Young-Jae;Park, Jin-Goo;Kwon, Pan-Ki;Kim, Chang-Il;Oh, Chan-Kwon;Kim, Soo-Myoung;Jhon, Myung-S.;Hur, Se-An;Kim, Young-Jung;Kim, Bong-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.4
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    • pp.163-166
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    • 2006
  • The dishing and the erosion were evaluated on the tungsten CMP process with conventional and new developed slurry. The tungsten thin film was polished by orbital polishing equipment. Commercial pattern wafer was used for the evaluation. Both slurries were pre tested on the oxide region on the wafer surface and the removal rate was not different very much. At the pattern density examination, the erosion performance was increased at all processing condition due to the reduction of thickness loss in new slurry. However, the dishing thickness was not remarkably changed at high pattern density despite of the improvement at low pattern density. At the large pad area, the reduction of dishing thickness was clearly found at new tungsten slurry.

CMP Properties of Oxide Film with Various Pad Conditioning Temperatures (CMP 패드 컨디셔닝 온도에 따른 산화막의 연마특성)

  • Choi, Gwon-Woo;Kim, Nam-Hoon;Seo, Yong-Jin;Lee, Woo-Sun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.4
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    • pp.297-302
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    • 2005
  • Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.

A Study on the Process Condition of Electropolishing for Stamping Leadframe (스탬핑 리드프레임의 전해 연마 가공조건에 관한 연구)

  • 신영의;김경섭;김헌의;류기원;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.12
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    • pp.983-988
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    • 2000
  • The leadframe of thin plate fabricated by stamping method generates a lot of burr and stress in the processing surface because of the mold. The electropolishing equipment was produced in order to increase accuracy and surface roughness for 42%Ni-Fe leadframe. An electrolyte consisted of phosphoric acid, ethylene glycol and deionized water. Experiments were accomplished as polishing conditions were changed such as current density, polishing time, electrode gap and sample shape. The burr from the cutting was eliminated and surface characteristics of high flatness and high luster wre obtained after electropolishing. In addition, the electroplishing had good characteristic in 1.0 A current density and 4㎜ of electrode spaces, and it was affected by the composition of electrolyte and the sample shape.

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