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http://dx.doi.org/10.4313/JKEM.2005.18.4.297

CMP Properties of Oxide Film with Various Pad Conditioning Temperatures  

Choi, Gwon-Woo (조선대학교 전기공학과)
Kim, Nam-Hoon (조선대학교 에너지자원신기술연구소)
Seo, Yong-Jin (대불대학교 전기전자공학과)
Lee, Woo-Sun (조선대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.4, 2005 , pp. 297-302 More about this Journal
Abstract
Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.
Keywords
CMP(chemical mechanical polishing); Oxide film; Pad conditioning; Conditioning temperature;
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