• Korean Journal of Materials Research
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• 제16권12호
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• pp.731-738
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• 2006

It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

• Journal of Astronomy and Space Sciences
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• 제18권3호
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• pp.239-248
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• 2001

Far-ultraviolet IMaging Spectrograph (FIMS) is the main payload of the first Korean scientific satellite, KAISTSAT-4, which will be launched in 2002. Among the optical parts, parabolic cylinder mirror does not have any heritage from previous astronomical missions, so the manufacturing and testing process itself is a challenging issue. We describe the method of manufacturing and measuring of the off-axis parabolic cylinder mirror and our initial experiments to establish the entire manufacturing process. Using the method, the profile error can meet the specification of $lambda$ per cm which is closely related with the astronomical performances. In case of the surface roughness, temperature controlled pitch polishing reduces $R_{q}$ under 1 nm implying that scattering in the entire spectral range of FIMS is less than 2% of the incident UV light.

• Journal of the Korea Academia-Industrial cooperation Society
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• 제19권6호
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• pp.160-166
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• 2018

The worldwide semi-conductor market has been growing for a long time. Manufacturing lines of semi-conductors need to handle several types of toxic gases. In particular, they need to be controlled accurately in real time. This type of toxic gas control system consists of many different kinds of parts, e.g., fittings, valves, tubes, filters, and regulators. These parts obviously need to be manufactured precisely and be corrosion resistant because they have to control high pressure gases for long periods without any leakage. For this, surface machining and hardening technologies of the metal block and metal gasket need to be studied. This type of study depends on various factors, such as geometric shapes, part materials, surface hardening method, and gas pressures. This paper presents strong concerns on a series of simulation processes regarding the differences between the inlet and outlet pressures considering several different fluid velocity, tube diameters, and V-angles. Indeed, this study will very helpful to determine the important design factors as well as precisely manufacture these parts. The EP (Electrolytic Polishing) process was used to obtain cleaner surfaces, and hardness tests were carried out after the EP process.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• 제25권1호
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• pp.36-44
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• 2015

Objectives: This study aimed to elucidate the physicochemical properties of silica powder and airborne particles as by-products generated from fabrication processes to reduce unknown risk factors in the semiconductor manufacturing work environment. Materials and Methods: Sampling was conducted at 200 mm and 300 mm semiconductor wafer fabrication facilities. Thirty-two powder and airborne by-product samples, diffusion(10), chemical vapor deposition(10), chemical mechanical polishing(5), clean(5), etch process(2), were collected from inner chamber parts from process and 1st scrubber equipment during maintenance and process operation. The chemical composition, size, shape, and crystal structure of silica by-product particles were determined by using scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy, and x-ray diffractometry. Results: All powder and airborne particle samples were composed of oxygen(O) and silicon(Si), which means silica particle. The by-product particles were nearly spherical $SiO_2$ and the particle size ranged 25 nm to $50{\mu}m$, and most of the particles were usually agglomerated within a particle size range from approximately 25 nm to 500 nm. In addition, the crystal structure of the silica powder particles was found to be an amorphous silica. Conclusions: The silica by-product particles generated from the semiconductor manufacturing processes are amorphous $SiO_2$, which is considered a less toxic form. These results should provide useful information for alternative strategies to improve the work environment and workers' health.

• Journal of the Microelectronics and Packaging Society
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• 제20권4호
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• pp.81-85
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• 2013

Wafer stacking technology becomes more important for the next generation IC technology. It requires new process development such as TSV, wafer bonding, and wafer thinning and also needs to resolve wafer warpage, power delivery, and thermo-mechanical reliability for high volume manufacturing. In this study, Cu CMP which is the key process for wafer bonding has been studied using Cu CMP and oxide CMP processes. Wafer samples were fabricated on 8" Si wafer using a damascene process. Cu dishing after Cu CMP and oxide CMP was $180{\AA}$ in average and the total height from wafer surface to bump surface was approximately $2000{\AA}$.

• Journal of the Korean Society for Precision Engineering
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• 제25권12호
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• pp.125-131
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• 2008

In the past, precision optical glass lenses were produced through multiple processes such as grinding and polishing, but mass production of aspheric lenses requiring high accuracy and having complex profile was rather difficult. In such a background, the high-precision optical GMP processes were developed with an eye to mass production of precision optical glass parts by molding press. Generally because the forming stage in a GMP process is operated at high temperature above $570^{\circ}C$, thermal stresses and deformations are generated in the aspheric glass lens mold that is used in GMP process. Thermal stresses and deformations have negative influences on the quality of a glass lens and mold, especially the height of the deformed glass lens will be different from the height of designed glass lens. To prevent the problems of a glass lens mold and the glass lens, it is very important that the thermal stresses and deformations of a glass lens mold at high forming temperature are considered at the glass molds design step. In this study as a fundamental study to develop the molds used in an aspheric glass lens fabrication, a heat transfer and a thermal stress analysis were carried out for the case of one cavity glass lens mold used in progressive GMP process. Finally using analysis results, it was predicted the height of thermally deformed guide ring and calculated the height of the guide ring to be modified, $64.5{\mu}m$. This result was referred to design the glass lens molds for GMP process in production field.

• Journal of the Microelectronics and Packaging Society
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• 제19권3호
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• pp.37-41
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• 2012

The wafer level stacking with Cu-to-Cu bonding becomes an important technology for high density DRAM stacking, high performance logic stacking, or heterogeneous chip stacking. Cu CMP becomes one of key processes to be developed for optimized Cu bonding process. For the ultra low-k dielectrics used in the advanced logic applications, Ti barrier has been preferred due to its good compatibility with porous ultra low-K dielectrics. But since Ti is electrochemically reactive to Cu CMP slurries, it leads to a new challenge to Cu CMP. In this study Ti barrier/Cu interconnection structure has been investigated for the wafer level 3D integration. Cu CMP wafers have been fabricated by a damascene process and two types of slurry were compared. The slurry selectivity to $SiO_2$ and Ti and removal rate were measured. The effect of metal line width and metal density were evaluated.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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• pp.259-263
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• 2001

There are several steps such as slicing, lapping, chemical etching and mechanical polishing in the silicon wafer production process. The chemical etching step is necessary to remove damaged layer caused In the slicing and lapping steps. The typical etching liquor is the acid mixture comprising nitric acid, acetic acid and hydrofluoric acid. At present, the waste acid is treated by a neutralization method with a high alkali cost and balky solid residue. A solvent extraction method is applicable to separate and recover each acid. Acetic acid is first separated from the waste liquor using 2-ethlyhexyl alcohols as an extractant. Then, nitric acid is recovered using TBP(Tri-butyl phosphate) as an extractant. Finally hydrofluoric acid is separated with the TBP solvent extraction. The expected recovered acids in this process are 2㏖/l acetic acid, 6㏖/1 nitric acid and 6㏖/l hydrofluoric acid. The yields of this process are almost 100% for acetic acid and nitric acid. On the other hand, it is important to recover and reuse the metal values contained in various industrial wastes in a viewpoint of environmental preservation. Most of industrial products are made through the processes to separate impurities in raw materials, solid and liquid wastes being necessarily discharged as industrial wastes. Chemical methods such as solvent extraction, ion exchange and membrane, and physical methods such as heavy media separation, magnetic separation and electrostatic separation are considered as the methods for separation and recovery of the metal values from the wastes. Some examples of the application of solvent extraction to the treatment of wastes such as Ni-Co alloy scrap, Sm-Co alloy scrap, fly ash and flue dust, and liquid wastes such as plating solution, the rinse solution, etching solution and pickling solution are introduced.

• Journal of Korean Society on Water Environment
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• 제22권2호
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• pp.222-229
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• 2006

The treatment performance and operational parameters of a tertiary wastewater treatment process a biological filtration system were investigated. The biological filtration system consisted of a nitrification filter (Fiter 1) and a polishing filter with anoxic and aerobic parts (Filter 2). SS, T-C-BOD, and T-N in effluent were kept stable at less than 3, 5 mg/L, and 5 mgN/L, respectively, under a HRT in Filter (filter-bed) of 0.37~2.3 h. T-N at the outlet of Filter 2 were about 1~5 mgN/L under the condition of LV of 50~202 m/d. In Filter 2, denitrification was accomplished under LV of 50~168 m/d in a 1 m filter-bed. However, the denitrification capacity reached the maximum when the linear velocity was increased to 202 m/d. Relationship between increase in microorganism and headloss was clearer in Filter 2. As a result, the denitrification rate increased from 1.0~2.3 kgN/($m^3-filter-bed{\cdot}d$) as the headloss increased. The COD removal rate was 6.0~9.6 kgCOD/($m^3-filter-bed{\cdot}d$) when operated with Filters 1 and 2. These results mean that captured bacteria contributed a part of COD consumption and denitrification. The maximum nitrification and denitrification rate was 0.5 and 4 kgN/($m^3-filter-bed{\cdot}d$) in Filter 1 and 2.The ratio of backwashing water to the treated water was about 5~10 %. In Filter 1, wasted sludge in backwashing was only 0.7~5.3 gSS/($m^3$-treated water). In Filter 2, added methanol was converted into sludge and its value was 8.0~24 gSS/($m^3$-treated water). These results proved that this process is both convenient to install as tertiary treatment and cost effective to build and operate.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 한국소성가공학회 2005년도 추계학술대회 논문집
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• pp.247-250
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• 2005

The need for improved fuel efficiency, weight reduction has motivated the automotive industry to focus on aluminum alloys as a replacement for steel-based alloy. To cope with the needs for high structural rigidity with low weight, it is forecasted that substantial amount of cast components will be replaced by tubular parts which are mainly manufactured by the extruded aluminum tubes. The extrusion process is utilized to produce tubes and hollow sections. Because there is no weld seam, the circumferential mechanical properties may be uniform and advantageous for hydroforming. However the possibility of the occurrence of a surface defect is very high, especially due to the temperature increase from forming at high pressure when it comes out of the bearing and the roughness of the bearing, which cause the surface defects such as the dies line and pick-up. And when forming a extruded aluminum tube, the free surface of the tube becomes rough with increasing plastic strain. This is well known as orange peel phenomena and has a great effect not only on the surface quality of a product but also on the forming limit. In an attempt to increase the forming limit of the tubular specimen, in the present paper, surface asperities generated during the hydroforming process are polished to eliminate the weak positions of the tube which lead to a localized necking. It is shown that the forming limit of the tube can be considerably improved by simple method of polishing the surface roughness during hydroforming. And also the extent of the crack propagation caused by dies lines generated during the extrusion process is evaluated according to the deformed shape of the tube.