• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.438-443
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• 2001

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.501-504
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• 1999

In the shallow trench isolation(STI) chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control within- wafer-non-uniformity, and the possible defects such as nitride residue and pad oxide damage. These defects after STI CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI filling and STI CMP were discussed. It is represented that the nitride residue can be occurred in the condition of high post CMP thickness and low trench depth. In addition there are remaining oxide on the moat surface after reverse moat etch. It means that reverse moat etching process can be the main source of nitride residue. Pad oxide damage can be caused by over-polishing and high trench depth.

• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.1-4
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• 2013

For the conventionally polished fused silica substrate, an around 100 nm depth redeposition polishing layer was formed on the top of surface. Polishing compounds, densely embedded in the redeposition polishing layer were the dominant factor that limited the laser induced damage threshold (LIDT) of transmission elements in nanosecond laser systems. Chemical etching, super-precise polishing and ion beam etching were employed in different ways to eliminate these absorbers from the substrate. After that, Antireflection (AR) coatings were deposited on these substrates in the same batch and then tested by 1064 nm nano-pulse laser. It was found that among these techniques only the ion beam etching method, which can effectively remove the polishing compound and did not induce extra absorbers during the disposal process, can successfully improve the LIDT of AR coatings.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.11a
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• pp.263-268
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• 1999

Langasite, a new piezoelectric material was polished by CMP(chemical mechanical polishing). To enhance the polishing rate, alumina abrasives were added to commercial ILD1300 slurry which contains silica abrasive. The effect of added alumina 0 the silica slurry on the polishing rate and damage of langasite was investigated, Experimental results show that the polishing rate and roughness increases with increasing added alumina particle size, Crystallinity of the langasite is also lowered by alumina addition.

• Nuclear Engineering and Technology
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• v.54 no.6
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• pp.1935-1946
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• 2022

The investigations of the coated-particles of nuclear fuel samples are carried out in three stages: front-end, irradiation in the reactor core, and post-irradiation examination. The front-end stage is the initial analysis of the failures rates of produced samples before they are placed in the reactor core. The purpose of the verification is to prepare the particles for an experiment that will determine the degree of damage to the coated particles at each stage. Before starting experiments with the samples, they must be properly prepared. Polishing the samples in order to uncover the inner layers is an important, initial experimental step. The authors of this paper used a novel way to prepare samples for testing - by applying an ion polisher. Mechanical polishing used frequently for sample preparations generates additional mechanical damages in the studied fuel particle, thus directly affecting the experimental results. The polishing methods were compared for three different coated particles using diagnostic methods such as Raman spectroscopy, scanning electron microscopy, and confocal laser scanning microscopy. Based on the obtained results, it was concluded that the ion polishing method is better because the level of interference with the structures of the individual layers of the tested samples is much lower than with the mechanical method. The same technique is used for the fuel particles undergone ion implantation simulating radiation damage that can occur in the reactor core.

• Corrosion Science and Technology
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• v.21 no.4
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• pp.314-324
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• 2022

The objective of this investigation was to indentify major factors affecting surface roughness among various parameters of electropolishing process using the design of an experiment method (full factorial design) for UNS S31603. Factors selected included electrolyte composition ratio, applied current density, and electrolytic polishing time. They were compared through analysis of variance (ANOVA). Results of ANOVA revealed that all parameters could affect surface roughness, with the influence of electrolyte composition ratio being the highest. As a result of surface analysis after electropolishing, the specimen with the deepest surface damage was about 35 times greater than the condition with the smallest surface damage. The largest value of surface roughness after electropolishing was higher than that of mechanical polishing due to excessive processing. On the other hand, the smallest value of surface roughness after electropolishing was 0.159 ㎛, which was improved by more than 80% compared to the previous mechanical polishing. Taken all results together, it is the most appropriate to perform electrolytic polishing with a sulfuric acid and phosphoric acid ratio of 3:7, an applied current density of 300 mA/cm², and anelectrolytic polishing time of 5 minutes.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.6
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• pp.145-154
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• 2002

CMP (Chemical mechanical polishing) process was used to control the fine grinding process induced mechanical damage of Cz Silicon wafer. Characterization of mechanical damage was carried out using Nomarski microscope, magic mirror and also using angle lapping and lifetime scanner evaluation after heat treatment. Magic mirror and lifetime scanner were very useful for the residual damage pattern characterization and CMP process was effective on the reduction of fine grinding induced mechanical damage.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.4
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• pp.69-80
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• 2000

Generally, die polishing is a lime consuming process, resulting in 30∼50％ of the whole die manufacturing time. However, die polishing has not been automated yet, since it needs a great deal of experience and skill. This paper describes a new development of automated system for die polishing and focuses on the successful achievements of the element techniques to realize from hand skill to automation, as followings: (1) The 5 axes polishing system by the aid of robot with 2 degrees of freedom, is developed for the application of curved surface die. (2) The CAM system realizes a 5 axes tool path control for polishing and measuring. (3) The conductive elastic tool is able to meet curved surfaces of die and gives a high efficient and quality polishing characteristics. (4) The surface roughness measurement device with noncontact laser is developed and has a high reliability without surface damage.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.459-462
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• 1999

Recent advances in NLO Borate Crystals for UV Generation are reviewed with the particular emphasis on the technique to improve the life time of UV optics. The laser-damage resistance of CLBO and fused silica surfaces was successfully improved after removing polishing compound by ion beam etching. The polishing compound embedded in the CLBO and fused silica surfaces were to a depth of less than 100nm. We were able to remove polishing compound without degrading the surface condition when the applied ion beam voltage was less than 200 V. The laser-induced surface damage threshold of CLBO was improved up to 15J/$\textrm{cm}^2$(wavelength: 355 nm, pulse width: 0.85 ns)as compared with that of the as-polished surface (11 J/$\textrm{cm}^2$). The laser-induced surface damage of fused silica also increased from 7.5J/$\textrm{cm}^2$ to 15J/$\textrm{cm}^2$. For the irradiation of a 266 nm high-intensity and high-repetition laser light, the surface lifetime of CLBO and fused silica could be more doubled compared with that of the as-polished surface.

• Journal of Surface Science and Engineering
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• v.55 no.4
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• pp.236-246
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• 2022

Electropolishing is a surface finishing treatment that compensates for the disadvantages of the mechanical polishing process. It not only has a smooth surface, but also improves corrosion resistance. Therefore, the purpose of this investigation is to examine the corrosion resistance and electrochemical characteristics in seawater of UNS S31603 with electropolishing process time. The roughness improvement rate after electropolishing was improved by about 78% compared to before polishing, indicating that the electropolishing is effective. As a result of potential measuring of mechanical polishing and electropolishing, the potential of electropolishing was nobler than the mechanical polishing condition. As a result of calculating the corrosion current density after potentiodynamic polarization experiment with electropolishing conditions, the corrosion current density of mechanical polishing was about 6.4 times higher than that of electropolishing. After potentiodynamic polarization experiment with electropolishing conditions, the maximum damage depth of mechanical polishing was about 2.2 times higher than that of electropolishing(7 minutes). In addition, the charge transfer resistance of the specimen electropolished for 7 minutes was the highest, indicating improved corrosion resistance.