• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.11
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• pp.1290-1298
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• 1992

In this paper, the Poisson's equation is solved two-dimensionally without employing any fitting parameters, and the model formulation of a short-channel MOSFET is accomplished fully analytically. It automatically derives a very accurate drain current expression that can be used simultaneously for strong inversion, subthreshold, and saturation regions. Furthermore, this model gives a unified explanation for the short-channel effect, the body effect, the DIBL effect, and even the variation of the effective carrier mobility. The obtained expression of the threshold voltage also includes the dependence on the oxide thickness, the n+ junction depth, and temperature.

• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2553-2556
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• 2010

On the basis of a simple modified Poisson-Boltzmann (SMPB) theory, taking into account the finite ionic size, the analytic expression for the effect of ionic size on the diffuse layer potential drop at negative charge densities has been given for the simple 1:1 electrolyte. It is shown that the potential drop across the diffuse layer depends on the size of the ions in the electrolyte. For a given electrolyte concentration and electrode charge density, the diffuse layer potential drop in a small ion system is smaller than that in a large ion system. It is also displayed that the diffuse layer potential drop is always less than the value of the Gouy-Chapman (GC) theory, and the deviation increases as the electrode charge density increases for a given electrolyte concentration. These theoretical results are consistent with the results of the Monte-Carlo simulation [Fawcett and Smagala, Electrochimica Acta 53, 5136 (2008)], which indicates the importance of including steric effects in modeling diffuse layer properties.

• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.247-253
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• 2014

In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.

• Journal of the Korean Society for Advanced Composite Structures
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• v.1 no.2
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• pp.29-35
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• 2010

In addition to the Young's modulus, the Poisson's ratio is also at the center of attention in the field stochastic finite element analysis since the parameters play an important role in determining structural behavior. Accordingly, the sole effect of this parameter on the response variability is of importance from the perspective of estimation of uncertain response. To this end, a formulation to determine the response variability in laminate composite plates due to the spatial randomness of Poisson's ratio is suggested. The independent contributions of random Poisson's ratiocan be captured in terms of sub-matrices which include the effect of the random parameter in the same order, which can be attained by using the Taylor's series expansion about the mean of the parameter. In order to validate the adequacy of the proposed formulation, several example analyses are performed, and then the results are compared with Monte Carlo simulation (MCS). A good agreement between the suggested scheme and MCS is observed showing the adequacy of the scheme.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.7
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• pp.1537-1542
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• 2011

In this paper, the subthreshold characteristics have been analyzed for various oxide thickness of double gate MOSFET(DGMOSFET) using Poisson's equation with nonuniform doping distribution. The DGMOSFET is extensively been studying since it can shrink the short channel effects(SCEs) in nano device. The degradation of subthreshold swing(SS) known as SCEs has been presented using analytical for, of Poisson's equation with nonuniform doping distribution for DGMOSFET. The SS have been analyzed for, change of gate oxide thickness to be the most important structural parameters of DGMOSFET. To verify this potential and transport models of thus analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing has been analyzed using this models for DGMOSFET.

• Membrane Journal
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• v.13 no.1
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• pp.37-46
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• 2003

The electrokinetic effect can be found in cases of the fluid flowing across the charged membrane micropores. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is taken into the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like pore is obtained via the Green's function. An explicit analytical expression for the flow-induced streaming potential is derived as functions of relevant physicochemical parameters. The influences of the electric double layer, the surface potential of the wall, and the charge condition of the pore wall upon the velocity profile as well as the streaming potential are examined. With increasing of either the electric double layer thickness or the surface potential, the average fluid velocity is entirely reduced, while the streaming potential increases.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.21-28
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• 2007

In this paper, in order to derive the two-dimensional field effect of n-InAlAs/InGaAs HEMTs, we suggested analytical model by solving the two-dimensional Poisson's equation in both InAlAs and InGaAs regions by taking into account the longitudinal field variation, field-dependent mobility, and the continuity condition of the channel current flowing within the quantum well shaped channel. Derived expressions for long and short channel devices would be applicable to the entire operating regions in a unified manner. Simulation results show that the drain saturation current increases and the threshold voltage decreases as drain voltage increases. Compared with the conventional model, the present model may offer more reasonable explanation for the drain-induced threshold voltage roll-off, the Early effect, and the channel length modulation effect. Furthermore, it is expected that the proposed model would provide more reasonable theoretical basis for analyzing various long and short channel InAlAs/InGaAs HEMT devices.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• Journal of Korea Trade
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• v.23 no.2
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• pp.76-87
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• 2019

Purpose - This study empirically analyzes the effects of the European Union-South Korea Free Trade Agreement on Korean exports in major sectors. Design/Methodology - This study is based on the augmented gravity model with a panel data set covering 51 countries between the years 2000 and 2015. Findings - Main findings of the present study is that the agreement has affected the chemical sector the most. Fixed effects estimation predicted a positive trade effect of 38.3%, while Poisson maximum likelihood estimation predicted an impact of 4.75% in the chemical export sector. Regression results for the other sectors only show insignificant effects. Originality/value - The findings imply that the effects of the EU-South Korea free trade agreement on the Korean exports are quite specific compared to the European ones, meaning that the Korean government should focus on sector-specific programs to maximize the welfare benefits of the free trade agreement.

• East Asian Economic Review
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• v.26 no.2
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• pp.143-169
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• 2022

This study investigates the effect of economic factors on immigration using the gravity model of immigration. Cross-sectional regression and panel data analyses are conducted from 2000 to 2019 using the OECD International Migration Database, which consists of 36 destination countries and 201 countries of origin. The Poisson pseudo-maximum-likelihood method, which can effectively correct potential biased estimates caused by zeros in the immigration data, is used for estimation. The results indicate that the economic factors strengthened after the global financial crisis. Additionally, this effect varies depending on the type of immigration (the income level of origin country). The gravity model applied to immigration performs reasonably well, but it is necessary to consider the country-specific and time-varying characteristics.