• Journal of the Society of Naval Architects of Korea
• /
• v.32 no.3
• /
• pp.62-71
• /
• 1995

In the numerical analysis of incompressible unsteady Navier-stokes equation, large time is required for solving the pressure Poisson equation of the elliptic type at each time step. In this paper, a numerical analysis by the direct method is carried out to solve the pressure Poisson equation and the computing time is analyzed as mesh size increases. The pressure Poisson equation can be transformed to the boundary value problem by the Green theorem. The computing time for the convolution type of the domain integral can be reduced by using F.F.T. and the computing time in the direct method depends entirely on obtaining the solution of the boundary value problem. The numerical analysis on the known solutions is carried out and compared for the verification of the direct method. And the numerical analysis on the body boundary and domain decomposition problem are carried out with the computing time less than O($n^{3}$) in the (n.n) mesh.

• Journal of information and communication convergence engineering
• /
• v.7 no.1
• /
• pp.57-61
• /
• 2009

This paper has presented the subthreshold current model of FinFET using the potential variation in the doped channel based on the analytical solution of three dimensional Poisson's equation. The model has been verified by the comparison with the data from 3D numerical device simulator. The variation of subthreshold current with front and back gate bias has been studied. The variation of subthreshold swing and threshold voltage with front and back gate bias has been investigated.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2022.05a
• /
• pp.216-217
• /
• 2022

Poisson-Boltzmann equation (PBD), which describes the effects of charges inside cells, plays important roles in various disciplinaries including biology. In this presentation, we introduce a ResNet based method to predict solution of PBE. First, we generate solutions of PBE based on FEM. Next, we train networks whose input shape includes location of charge and shape of cell and while output shape includes the electronic potential.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.4
• /
• pp.451-456
• /
• 2014

A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.18 no.2
• /
• pp.117-123
• /
• 2018

In this study, we suggest a fast image reconstruction scheme using Poisson equation from image gradient domain. In this approach, using the Poisson equation, a guided vector field is created by employing source and target images within a selected region at the first step. Next, the guided vector is used in generating the result image. We analyze the problem of reconstructing a two-dimensional function that approximates a set of desired gradients and a data term. The joined data and gradients are able to work like modifying the image gradients while staying close to the original image. Starting with this formulation, we have a screened Poisson equation known in physics. This equation leads to an efficient solution to the problem in FFT domain. It represents the spatial filters that solve the two-dimensional screened Poisson model and shows gradient scaling to be a well-defined sharpen filter that generalizes Laplace sharpening. We demonstrate the results using a discrete cosine transformation based this Poisson model.

• 한국전산유체공학회:학술대회논문집
• /
• 1998.11a
• /
• pp.96-101
• /
• 1998

Various discretiation methods of Laplacian operator in the Pressure-Poisson equation are investigated for the solution of incompressible Navier-Stokes equations using the non-staggered grid. Laplacian operators previously proposed by other researchers are applied to a Driven-Cavity problem. The computational results are compared with those of Ghia. The results show the characteristics of the discrete Laplacian operators.

• Kyungpook Mathematical Journal
• /
• v.48 no.4
• /
• pp.529-543
• /
• 2008

It is shown that every almost linear mapping h : $A{\rightarrow}B$ of a unital PoissonC*-algebra A to a unital Poisson C*-algebra B is a Poisson C*-algebra homomorph when $h(2^nuy)\;=\;h(2^nu)h(y)$ or $h(3^nuy)\;=\;h(3^nu)h(y)$ for all $y\;\in\;A$, all unitary elements $u\;\in\;A$ and n = 0, 1, 2,$\codts$, and that every almost linear almost multiplicative mapping h : $A{\rightarrow}B$ is a Poisson C*-algebra homomorphism when h(2x) = 2h(x) or h(3x) = 3h(x for all $x\;\in\;A$. Here the numbers 2, 3 depend on the functional equations given in the almost linear mappings or in the almost linear almost multiplicative mappings. We prove the Cauchy-Rassias stability of Poisson C*-algebra homomorphisms in unital Poisson C*-algebras, and of homomorphisms in Poisson Banach modules over a unital Poisson C*-algebra.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.15 no.7
• /
• pp.1537-1542
• /
• 2011

In this paper, the subthreshold characteristics have been analyzed for various oxide thickness of double gate MOSFET(DGMOSFET) using Poisson's equation with nonuniform doping distribution. The DGMOSFET is extensively been studying since it can shrink the short channel effects(SCEs) in nano device. The degradation of subthreshold swing(SS) known as SCEs has been presented using analytical for, of Poisson's equation with nonuniform doping distribution for DGMOSFET. The SS have been analyzed for, change of gate oxide thickness to be the most important structural parameters of DGMOSFET. To verify this potential and transport models of thus analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing has been analyzed using this models for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.13 no.11
• /
• pp.2373-2377
• /
• 2009

In this paper, the threshold voltage characteristics have been analyzed using three dimensional Poisson's equation for FinFET. The FinFET is extensively been studing since it can reduce the short channel effects as the nano device. We have presented the short channel effects such as subthreshold swing and threshold voltage for PinFET, using the analytical three dimensional Poisson's equation. We have analyzed for channel length, thickness and width to consider the structural characteristics for FinFET. Using this model, the subthreshold swing and threshold voltage have been analyzed for FinFET since the potential and transport model of this analytical three dimensional Poisson's equation is verified as comparing with those of the numerical three dimensional Poisson's equation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2009.10a
• /
• pp.928-930
• /
• 2009

In this paper, the threshold voltage characteristics have been alanyzed using three dimensional Poisson's equation for FinFET. The FinFET is extensively been studing since it can reduce the short channel effects as the nano device. We have presented the short channel effects such as subthreshold swing and threshold voltage for FinFET, using the analytical three dimensional Poisson's equation. We have analyzed for channel length, thickness and width to consider the structural characteristics for FinFET. Using this model, the subthreshold swing and threshold voltage have been analyzed for FinFET since the potential and transport model of this analytical three dimensional Poisson's equation is verified as comparing with those of the numerical three dimensional Poisson's equation.