• Geomechanics and Engineering
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• v.20 no.1
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• pp.1-7
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• 2020

In structures excavated in rock mass, load progressively increases to a level and remains constant during the construction. Rocks display different elastic properties such as E_i and ʋ under different loading conditions and this requires to use the true values of elastic properties for the design of safe structures in rock. Also, rocks will undergo horizontal and vertical deformations depending on the amount of load applied. However, under constant loads, values of E_i and ʋ will vary in time and induce variations in the behavior of the rock mass. In some empirical equations in which deformation modulus of the rock mass is taken into consideration, elastic parameters of intact rock become functions in the equation. Hence, the use of time dependent elastic properties determined under constant loading will yield more reliable results than when only constant elastic properties are used. As well known, rock material will play an important role in the deformation mechanism since the discontinuities will be closed due to the load. In this study, E_i and ʋ values of intact rocks were investigated under different constant loads for certain rocks with high deformation capabilities. The results indicated significant time dependent variations in elastic properties under constant loading conditions. E_i value obtained from deformability test was found to be higher than the E_i value obtained from the constant loading test. This implies that when static values of elastic properties are used, the material is defined as more elastic than the rock material itself. In fact, E_i and ʋ values embedded in empirical equations are not static. Hence, this workattempts to emerge a new understanding in designing of safer structures in rock mass by numerical methods. The use of time-dependent values of E_i and ʋ under different constant loads will yield more accurate results in numerical modeling analysis.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1196-1202
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• 2013

This paper have analyzed the change of breakdown voltage for channel doping concentration and device parameters of double gate(DG) MOSFET using two dimensional potential model. The low breakdown voltage becomes the obstacle of power device operation, and breakdown voltage decreases seriously by the short channel effects derived from scaled down device in the case of DGMOSFET. The two dimensional analytical potential distribution derived from Poisson's equation have been used to analyze the breakdown voltage for device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. Resultly, we could observe the breakdown voltage has greatly influenced on device dimensional parameters as well as channel doping concentration, especially the shape of Gaussian function used as channel doping concentration.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.5
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• pp.1158-1174
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• 1988

A numerical technique is developed for the solution of fully developed turbulent recirculating flow in the passage of variable area using the non-orthogonal coordinate transformation. In the numerical analysis, primitive pressure-velocity finite difference equations were solved by SIMPLER algorithm with 2-equation turbulence model and algebraic stress model (ASM). QUICK scheme on the differencing of convective terms which is free from the inaccuracies of numerical diffusion has been applied to the variable grids and the results compared with those from HYBRID scheme. In order to test the effect of streamline curvatures on turbulent diffusion Lee and Choi streamline curvature correction model which has been obtained by modifying the Leschziner and Rodi's model is testes. The ASM was also employed and the results are compared to those from another turbulence model. The results show that difference of convective differencing schemes and turbulence models give significant differences in the prediction of velocity fields in the expansion region and outlet region of the combustor, however show little differences in the parallel flow region.

• Structural Engineering and Mechanics
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• v.19 no.4
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• pp.425-440
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• 2005

In this paper, the behavior of a crack between two half-planes of functionally graded materials subjected to arbitrary tractions is resolved using a somewhat different approach, named the Schmidt method. To make the analysis tractable, it is assumed that the Poisson's ratios of the mediums are constants and the shear modulus vary exponentially with coordinate parallel to the crack. By use of the Fourier transform, the problem can be solved with the help of two pairs of dual integral equations in which the unknown variables are the jumps of the displacements across the crack surfaces. To solve the dual integral equations, the jumps of the displacements across the crack surfaces are expanded in a series of Jacobi polynomials. This process is quite different from those adopted in previous works. Numerical examples are provided to show the effect of the crack length and the parameters describing the functionally graded materials upon the stress intensity factor of the crack. It can be shown that the results of the present paper are the same as ones of the same problem that was solved by the singular integral equation method. As a special case, when the material properties are not continuous through the crack line, an approximate solution of the interface crack problem is also given under the assumption that the effect of the crack surface interference very near the crack tips is negligible. It is found that the stress singularities of the present interface crack solution are the same as ones of the ordinary crack in homogenous materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.255-263
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• 2022

The subthreshold swing (SS) of an asymmetric junctionless double gate (AJLDG) MOSFET is analyzed by the use of Gaussian function. In the asymmetric structure, the thickness of the top/bottom oxide film and the flat-band voltages of top gate (V_fbf) and bottom gate (V_fbb) could be made differently, so the change in the SS for these factors is analyzed with the projected range and standard projected deviation which are parameters for the Gaussian function. An analytical subthreshold swing model is presented from the Poisson's equation, and it is shown that this model is in a good agreement with the numerical model. As a result, the SS changes linearly according to the geometric mean of the top and bottom oxide film thicknesses, and if the projected range is less than half of the silicon thickness, the SS decreases as the top gate oxide film is smaller. Conversely, if the projected range is bigger than a half of the silicon thickness, the SS decreases as the bottom gate oxide film is smaller. In addition, the SS decreases as V_fbb-V_fbf increases when the projected range is near the top gate, and the SS decreases as V_fbb-V_fbf decreases when the projected range is near the bottom gate. It is necessary that one should pay attention to the selection of the top/bottom oxide thickness and the gate metal in order to reduce the SS when designing an AJLDG MOSFET.

• Journal of Korean Association for Spatial Structures
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• v.6 no.4 s.22
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• pp.81-92
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• 2006

This paper presents exact solutions for the free vibrations and buckling of rectangular plates having two opposite, simply supported edges subjected to linearly varying normal stresses causing pure in-plane moments, the other two edges being free. Assuming displacement functions which are sinusoidal in the direction of loading (x), the simply supported edge conditions are satisfied exactly. With this the differential equation of motion for the plate is reduced to an ordinary one having variable coefficients (in y). This equation is solved exactly by assuming power series in y and obtaining its proper coefficients (the method of Frobenius). Applying the free edge boundary conditions at y=0, b yields a fourth order characteristic determinant for the critical buckling moments and vibration frequencies. Convergence of the series is studied carefully. Numerical results are obtained for the critical buckling moments and some of their associated mode shapes. Comparisons are made with known results from less accurate one-dimensional beam theory. Free vibration frequency and mode shape results are also presented. Because the buckling and frequency parameters depend upon Poisson's ratio ( V ), results are shown for $0{\leq}v{\leq}0.5$, valid for isotropic materials.

• Computational Structural Engineering
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• v.8 no.4
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• pp.87-97
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• 1995

For the same configuration of two-dimensional finite element models, 6-node element exhibits stiffer bending stiffness than 8-node element. This is true in the relation between 16-node element and 20-node element for three-dimensional model. This stiffening phenomenon comes from the elimination of several mid nodes from full-node elements. Therefore, this may be called 'relative stiffness stiffening phenomenon'. It seems that there are a couple of ways to correct the stiffening effect, however, we could find only one effective method-the method of modification of Gauss sampling points-which passes the patch test and does not alter other kinds of stiffness, such as extensional stiffness. The quantity of modification is a function of Poisson's ratios of the constituent materials. We could obtain two modification equations, one for plane stress case and the other for plane strain case. This method can be extended to 3-dimensional solid elements. Except the exact plane strain cases, most 3-dimensional plates could be modeled successfully with 16-node element modified by the equation for the plane stress case. The effectiveness of the modification method is checked by applying it to several examples with excellent improvements. In numerical examples, beams with various boundary conditions are subjected to static and time-dependent loads. Free and forced motion analyses of beams and plates are also tested. The beam and plate may be composed of isotropic multilayers as well as a single layer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.11
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• pp.2709-2714
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• 2014

This paper has analyzed the change of threshold voltage and conduction path for the ratio of top and bottom gate oxide thickness of asymmetric double gate MOSFET. The asymmetric double gate MOSFET has the advantage that the factor to be able to control the current in the subthreshold region increases. The analytical potential distribution is derived from Poisson's equation to analyze the threshold voltage and conduction path for the ratio of top and bottom gate oxide thickness. The Gaussian distribution function is used as charge distribution. This analytical potential distribution is used to derive off-current and subthreshold swing. By observing the results of threshold voltage and conduction path with parameters of bottom gate voltage, channel length and thickness, projected range and standard projected deviation, the threshold voltage greatly changed for the ratio of top and bottom gate oxide thickness. The threshold voltage changed for the ratio of channel length and thickness, not the absolute values of those, and it increased when conduction path moved toward top gate. The threshold voltage and conduction path changed more greatly for projected range than standard projected deviation.

• Tunnel and Underground Space
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• v.33 no.3
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• pp.150-168
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• 2023

The anisotropic behavior of rocks is primarily attributed to the directional arrangement of rock-forming minerals and the distribution characteristics of microcracks. Notably, sedimentary and metamorphic rocks often exhibit distinct transverse isotropy in terms of their strength and deformation characteristics. Consequently, it is crucial to gain accurate insights into the deformation and failure characteristics of transversely isotropic rocks during rock mechanics design processes. The deformation of such rocks is described by five independent elastic constants, which are determined through laboratory testing. In this study, the characteristics of the directional variation of apparent elastic constants in transversely isotropic rocks were investigated using experimental data reported in the literature. To achieve this, the constitutive equation proposed by Mehrabadi & Cowin was introduced to calculate the apparent elastic constants more efficiently and systematically in a rotated Cartesian coordinate system. Four transversely isotropic rock types from the literature were selected, and the influence of changes in the orientation of the weak plane on the variations of the apparent elastic modulus, apparent shear modulus, and apparent Poisson's ratio was analyzed. Based on the investigation, a new constraint on the elastic constants has been proposed. If the proposed constraint is satisfied, the directional variation of the apparent elastic constants in transversely isotropic rocks aligns with intuitive predictions of their tendencies.