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http://dx.doi.org/10.6109/jkiice.2013.17.5.1196

Analysis of Breakdown Voltages of Double Gate MOSFET Using 2D Potential Model  

Jung, Hakkee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.17, no.5, 2013 , pp. 1196-1202 More about this Journal
Abstract
This paper have analyzed the change of breakdown voltage for channel doping concentration and device parameters of double gate(DG) MOSFET using two dimensional potential model. The low breakdown voltage becomes the obstacle of power device operation, and breakdown voltage decreases seriously by the short channel effects derived from scaled down device in the case of DGMOSFET. The two dimensional analytical potential distribution derived from Poisson's equation have been used to analyze the breakdown voltage for device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. Resultly, we could observe the breakdown voltage has greatly influenced on device dimensional parameters as well as channel doping concentration, especially the shape of Gaussian function used as channel doping concentration.
Keywords
DGMOSFET; device parameter; breakdown voltage; short channel effect; channel dimension;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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