• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 1994.10a
• /
• pp.33-43
• /
• 1994

A series of tensile tests have been performed to investigate the hardening behavior of rolled steel sheets. Tensile tests consist of three stages. At the 1st stage, full size tensile specimens were prestrained in the direction of rolling, then mid-sized tensile specimens were cut from the gauge sections of the full size specimens at angles to the rolling direction. At the 2nd stage, mid-sized specimens were prestrained by predetermined magnitudes of strains and miniature tensile specimens were prepared from each of the mid-sized specimens at every 10 degrees. At the final stage, from tests on miniature tensile specimens the hardening behavior of the prestrained sheets has been investigated. According to the experimental results, orthotropic symmetry is reserved during tensile elongation, and one of the orthotropy axes is continuously rotated to specimen axis. Existing theories seem to fail to explain the rotation of orthotropy axis. A new phenomenological model is proposed to explain the strain induced rotation of orthotropy axes.

• Transactions of Materials Processing
• /
• v.17 no.1
• /
• pp.19-26
• /
• 2008

In the present work, the ratcheting behavior under uniaxial cyclic loading is analyzed. A comparison between the published and the results from the present model is also included. In order to simulate the ratcheting behavior, Two-Back Stress model is proposed by combining the non-linear Armstrong-Frederick rule and the non-linear Phillips hardening rule based on kinematic hardening equation. It is shown that some ratcheting behaviors can be obtained by adjusting the control material parameters and various evolutions of the kinematic hardening parameter can be obtained by means of simple combination of hardening rules using simple rule of mixtures. The ultimate back stress is also derived for the present combined kinematic hardening models.

• Structural Engineering and Mechanics
• /
• v.5 no.6
• /
• pp.755-765
• /
• 1997

Within the framework of anisotropic combined viscoplastic hardening formulation, accounting macroscopically for residual stress as well as texture development at finite deformations of metals, simple shear analyses for the simulation of fixed-end torsion experiments for ${\alpha}$-Fe, Al and Cu at different strain rates are reviewed with an emphasis on the role of constitutive spins. Complicated responses of the axial stresses with monotonically increasing shear deformations can be successfully described by the capacity of orthotropic hardening part, featuring tensile axial stresses either smooth or oscillatory. Temperature effect on the responses of axial stresses for Cu is investigated in relation to the distortion and orientation of yield surface. The flexibility of this combined hardening model in the simulation of finite inelastic strains is discussed with reference to the variations of constitutive spins depending upon strain rates and temperatures.

• Proceedings of the KIEE Conference
• /
• 1999.07g
• /
• pp.3316-3318
• /
• 1999

PMMA(poly-methyl methacrylate) microlens array is fabricated using transparent acrylic resin. PMMA is commonly used material for plastic lens due to its excellent visibility larger than 90% and other optical characteristics so much close to those of glass. Orthodontic resin (DENTSPLY International Inc.), commonly used in dentistry, is an transparent acrylic resin kit including MMA liquid and polymerization powder. Their mixture results in PMMA through polymerization. Using the resin PMMA layer is formed on the substrate through spin-coating. Designed pattern of lens structure is transferred to PMMA layer by RIE (Reactive Ion Etching) with oxygen plasma. Final lens shape is formed by thermal treatment that causes PMMA to reflow, The thickness of PMMA spun on the substrate is $17{\mu}m$ that is also final sag of microlens, Designed diameters of the microlenses are $200{\mu}m$, $300{\mu}m$,and $500{\mu}m$, respectively.

• Journal of Biomedical Engineering Research
• /
• v.16 no.4
• /
• pp.481-491
• /
• 1995

Endovaginal and endorectal receiver only surface coils were designed for MR imaging (MRI) and $^1H$ MR spectroscopy (MRS) for the uterine cervix and the prostate. The shape of endovaginal coil wire was rectangular with round corner. Size of the coil wire was empirically determined for 7cm and 4cm along the long and short axis, respectively. The coil wire loop was supported by acryl handle and bent about $150^{\circ}$ at one side of the loop considering the average angle of the cervix to the vagina. We called this as a "spoon-type endovaginal coil". The wire of the endorectal coil was made of the flexible materials so that the wire loop became long elliptic shape by pushing the acryl handle into the plastic tube for the comfort of patients when the coil was inserted into the cervix. Then, the shape was maintained to be circle by popping out handle. Conventional spin echo (SE) and fast spin echo (FSE) sequences were used as 71 and 72 weighted imaging sequences, respectively. Matrix size was 128~$256{\times}256$. FOVs for surface coil and body coil were 14cm and 24cm, respectively. 3D volume localized in vivo $^1H$ MR spectroscopy of the human cervix and prostate was performed using PRESS or STEAM localization method with the following parameters . TR=3 sec, TE=135 msec for PRESS or 30 msec for STEAM, NEX=2, NS=48, Sl=2048, and SW=2500 Hz. Using home-built endovaginal and endorectal coils, excellent T1- and T2-images were obtained to visualize early cervical and prostate tumors. 3D volume localized in vivo IH MRS was useful to differentiate the cancerous tissue from the normal tissue.

• Maxillofacial Plastic and Reconstructive Surgery
• /
• v.19 no.1
• /
• pp.93-107
• /
• 1997

Magnetic resonance imaging has been used in the temporomandibular joint(TMJ) primarily to define morphology and positional relationship of associating structures. This report examines signal intensity characteristics of the posterior attachment as they related to the severity of internal derangement. Fifty six joints in 35 patients with a history of TMJ dysfunction were imaged writ MR using $T_1$-weighted spin echo sequence. According to disk position, ability to reduction, and the presence of osteoarthritis, the joints were categorized into three groups. A group 1 was anterior disk displacement with reduction; a group 2 was anterior disk displacement without reduction; a group 3 was anterior disk displacement without reduction and condyle had osteoarthritic change. The control group was determined by the clinical absence of any signs or symptoms of current or past TMJ pain and dysfunction. Calculated the relative value of MR signal intensity in posterior attachment and disk to cerebral cortex of temporal lobe by means of computer program, we have compared them with each groups. The result showed statistically little significant difference of disk signal intensity among each groups. but, signal intensity from posterior attachment in group 2 and 3 were significantly(p<0.05) decreased than control group. this might reflect an fibrosis or hyalinization of posterior attachment, which was part of remodeling process that occurs in disk displacement without reduction. However, this study could not demonstrate histologic confirmation of the decreased signal intensity in the posterior attachment. So, further investigation could be needed to understand the association between them.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.396-396
• /
• 2012

$TiO_2$ anatase nanotube arrays (NTAs) were grown by electrochemical anodization and followed annealing of Ti foil. Ethylene glycol/$NH_4F$-based organic electrolyte was used for electrolyte solution and using second anodization process to obtain free-standing NTAs. After obtaining NTAs, ITO film was deposited by sputtering process on bottom of NTAs. UV-curable NOA was used for attach free-standing NTAs on flexible plastic substrate (PEN). Solid state electrolyte (spiro-OMeTAD) was coated via spin-coating method on top of attached NTAs. Ag was deposited as a counter electrode. Under AM 1.5 simulated sunlight, optical characteristics of devices were investigated. In order to use flexible polymer substrate, processes have to be conducted at low temperature. In case of $TiO_2$ nano particles (NPs), however, crystallization of NPs at high temperature above $450^{\circ}C$ is required. Because NTAs were conducted high temperature annealing process before NTAs transfer to PEN, it is favorable for using PEN as flexible substrate. Fabricated flexible solid-state DSSCs make possible the preventing of liquid electrolyte corrosion and leakage, various application.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.344-344
• /
• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of the Korean Society for Precision Engineering
• /
• v.25 no.4
• /
• pp.134-139
• /
• 2008

A spirally arrayed nano-pattern is designed as a model pattern for the next generation optical storage media. The pattern consists off types of embossed rectangular dot, which are 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The height of the dot is designed to be 50nm. The pitch of the spiral track of the pattern is 100nm. A ER(Electron resist) master for this pattern is fabricated by e-beam lithography process. The ER is first spin-coated to be 50nm thick on a Si wafer and then the model pattern is written on the coated ER layer by e-beam. After developing this pattern written wafer in the solution, a ER pattern master is fabricated. The most conventional e-beam machine can write patterns in orthogonal way, so we made our own pattern generator which can write the pattern in circular or spiral way. This program generates the patterns to be compatible with the e-beam machine from Raith(Raith 150). To fabricate 50nm pattern master precisely, a series of experiments were done including the design compensation for the pattern size, optimization of the dose, acceleration voltage, aperture size and developing. Through these experiments, we conclude that the higher accelerating voltages and smaller aperture size are better for mastering the nano pattern which is in order of 50nm. With the optimized e-beam lithography process, a spiral arrayed 50nm pattern master adopting PMMA resist was fabricated to have dimensional accuracy over 95% compared to the designed. Using this pattern master, a metal pattern stamp will be fabricated by Ni electro plating for injection molding of the patterned plastic substrate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.341-341
• /
• 2011

최근 AMOLED 구동이 가능한 소자에 대한 연구가 활발히 진행중이다. AMOLED구동 가능소자는 LTPS TFT, a-Si TFT, OTFT, Oxide TFT가 있으며 그 중에서 현재 대부분 LTPS TFT를 사용하고 있다. LTPS TFT는 높은 전자 이동도와 안정성을 가지고 있기 때문에 현재 각광 받는 AMOLED에 잘 맞는다. 하지만 LTPS TFT는 고비용, 250$^{\circ}C$ 이상의 공정온도, Substrate가 Glass, Metal로 제한 된다는 문제점이 있으며, 균일성이 낮고 현재 대면적 기술이 부족한 상태이다. 해결방안으로 AMOLED를 타겟으로 하는 Oxide TFT 기술이 떠오르고 있다. Oxide TFT는 이동도가 높고 저온공정이 가능하며 Substrate로 Plastic 기판을 사용할 수가 있어 차후에 Flexible 소자로서의 적용이 가능하다. 또한 기존의 진공장비 사용대신 용액공정이 가능하여 장비사용시간 및 절차를 단축시킬 수 있어 비용적인 유리함을 가지고 있다. Oxide TFT는 단결정 산화물과 다결정 복합 산화물 두 가지 범주를 가지고 있다. Oxide TFT의 재료물질은 ZnO, ZTO, IZO, SnO2, Ga2O3, IGO, In2O3, ITO, InGaO3(ZnO)5, a-IGZO이 있다. 본 연구에서는 산화물질 중 하나인 ZTO를 이용하여 TFT 소자를 제작하였다. 산화물 특성상 열처리 온도에 따라 형성되는 결정의 정도가 다르기 때문에 온도 및 시간 변수에 따른 ZTO의 특성변화에 초점을 맞추어 연구함으로서 최적화된 조건을 찾고자 실험을 진행하였다. 실험을 위한 기판으로 n-type wafer을 사용하였다. PE-CVD 장비를 이용하여 SiNx를 120 nm 증착하고, ZTO 용액을 spin-coating을 이용하여 channel layer을 형성하였다. 균일하게 형성된 ZTO의 결정을 위하여 200$^{\circ}C$, 300$^{\circ}C$, 400$^{\circ}C$, 500$^{\circ}C$에서 1시간, 3시간, 6시간, 10시간의 온도 및 시간 변수를 두어 공기 중에서 열처리 하였다. ZTO는 약 30 nm 두께로 형성되었다. Thermal evaporator를 이용하여 Source, Drain의 알루미늄 전극을 형성하고, wafer 뒷면에는 Silver paste를 이용하여 Gate전극을 만들었다. 제작된 소자를 dark room temperature에서 측정하였다.