• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1333-1334
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• 2007

Al thin film was the most popular electrode in semiconductor and flat panel display world, because of its electrical conductivity, selectivity and easy to apply to thin film. However, Al thin films were not good to use on the bottom electrode about the crystalline growth of inorganic compound materials such as ZnO, AlN and GaN, because of its surface roughness and melting points. In this paper, we investigated Ar plasma surface treatment of Al thin film to enhance the surface roughness and electrical conductivity using the reactive ion etching system. Several process conditions such as RF power, working pressure and process time were controlled. In results, the surface roughness showed $15.53\;{\AA}$ when RF power was 100 W, working pressure was 50 mTorr and process time was 10 min. Also, we tried to deposit ZnO thin films on the each Al thin films, the upper conditions showed the best crystalline characteristics by x-ray diffraction.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.39 no.3
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• pp.1-10
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• 2002

Because of the reduced number of displayable gray levels resulting from inverse gamma correction, images on a plasma display panel (PDP) exhibit undesirable false contours in dark areas. An error diffusion method has been applied to remedy this problem. However, it is computationally expensive and requires large memory resources. This paper proposes a computationally efficient dithering based technique to improve the gray level reproduction capability in dark areas. In the proposed method, multiple dithering masks ate utilized in turn to improve the gray level reproduction in dark areas. Also, in order to reduce undesirable regular patterns generated by the dithering method, positions of threshold values within a given dithering mask are changed. Compared to the error diffusion method, the proposed method requires much less computations and memory resources with a comparable gray level reproduction capability.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.2
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• pp.106-112
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• 2010

In order to compete with other flat display devices such as Liquid Crystal Displays (LCDs) and organic light emitting diodes (OLEDs), Plasma Display Panels (PDPs) require to have high performances like high image quality, low power consumption and high speed driving. In this paper, Fe doped MgO protective layer was introduced for higher performance. Both the surface characteristics of the deposited thin films and the electro-optical properties of 4 inch test panels were investigated. It has been demonstrated experimentally that ac PDP with Fe doped MgO protective layer has lower discharge voltage than that of undoped MgO film, which corresponds to measured secondary electron emission coefficients. The crystallinity and surface roughness of thin films were determined by XRD patterns and AFM images. In addition, ac PDP with Fe doped MgO protective layer has improved address discharge time lag for high speed driving.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.112-117
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• 2003

MgO films is widely used in plasma display panel (PDP) technology. In this work, structural and optical properties of the MgO films deposited by e-beam evaporation, reactive magnetron sputtering, which are commercially used, and arc deposition were compared. MgO thin films were deposited on glass substrates by vacuum arc deposition equipment using a magnesium metal target at various oxygen gas flows. In order to investigate the packing density by ellipsometer, to measure reasonable erosion-rates of the MgO protective layers, we introduced an acceleration test method, namely, Ar+ ion beam induced erosion test. Also, XPS and UV test were adopted to examine the effect of the moisture on the optical transmittance of the MgO protective layers, which showed that these of MgO films by arc deposition method sustained more 90% and were insensitive to effect of the moisture. XRD and AFM have been also used to study behaviors of the structure and surface morphology.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.338-342
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• 2007

The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). In this paper, we describe the structural and discharge properties of MgO thin films, which were prepared by the ion-beam-assisted deposition (IBAD) of oxygen as the protective layer of PDPs. The energy of the oxygen ion beam was used as the parameter to control the deposition. We found that the oxygen ion beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen ion beam energy of 300 eV. The crystallization of the MgO thin film was also measured by X-ray diffraction analysis, and the surface quality was measured by atomic force microscopy.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.6
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• pp.27-33
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• 2002

This paper proposes a method to drive an AC plasma display panel(PDP) with a significantly improved contrast ratio. In the proposed method, during the first sub-field of one frame, all PDP cells are reset by the ramp waveform, and during the other sub-fields, only the cells turned on in the previous sub-field are reset. No light is emitted during the reset period of every sub-field except the first sub-field. For a 10-bit picture, the luminance of the dark level for the proposed method is 10 times lower than that for the conventional method, in which the ramp waveform for the reset is used in every sub-field. Accordingly, the contrast ratio for the proposed method is 10 times higher than that for the conventional method. For the 10-bit picture, the measured contrast ratio was about 3080:1 for the proposed method and about 285:1 for the conventional method, resulting in 10.8 times increase in the contrast ratio. This result shows that the proposed method can realize an image with high contrast ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.200-200
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• 2009

상용의 디스플레이로 널리 사용되고 있는 PDP(Plasma Display Panel)는 LCD와의 시장 경쟁으로 인하여 극한의 원가 경쟁 하에 있다. 따라서 각 공정에 대한 공정단가를 낮추기 위한 다양한 공정 및 소재 연구가 진행되고 있다. 그 가운데 하나가 Address와 Bus 전극으로 사용되고 있는 Ag 전극의 저온 소결이다. 이 공정은 저온소결 소재의 개발과 전극에 접촉하는 유전체 층과 matching이 중요하기 때문에 이들 소재의 동시 개발이 필요한 실정이다. 본 연구에서는 Ag 전극의 저온 소성을 위한 다양한 가능성을 검토하였다. 또한, 유전체와 동시 소결 가능한 소재의 특성 향상 및 저온 소성 연구를 동시에 수행하였다. Glass에 대한 유전체 층의 인쇄와 유전체 위에 전극 입자의 크기제어를 통한 기본 조성의 matching 특성을 비교하고 입자 크기가 전극의 소결 온도에 미치는 영향을 비교 평가 하였다. 유전체 층과의 matching 특성을 향상하기 위하여 유전체 조성의 일부를 전극에 첨가하여 두 소재간의 결합력을 증대시키기 위한 실험을 진행하였다. 그 결과를 바탕으로 저온 동시소성이 가능한 전극 소재의 최적화 실험을 실시하고 그 결과 최적의 전극 소재를 제시하였다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.189-194
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• 2001

PDP(Plasma Display Panel)의 투명 유전체에 적용 가능한 저융점 유리 중에서 납성분이 포함 되어 있지 않는 Bi계 유리의 연구를 행하였다. 기판과의 일체화를 위한 유리의 응용으로, 소자와의 반응 억제와 열응력 완화를 위해 유리의 저융점화 및 열팽창 계수를 제어하였다. 본 연구에서 제조된 Bi계 유리는 DTA와 TMA의 열분석을 통해 50$0^{\circ}C$부근에서 연화점이 있고, 7.31~10.02$\times$$10^{-6}$$^{\circ}C$, 비유전을 11.1~13.3, 광투과도가 80%이상으로 PDP 투명유전체에 적용 가능한 Bi계 유리를 얻을 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.703-706
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• 2004

This paper deals with the various sealing conditions in a vacuum and the discharge characteristics. The MgO thin film is prepared by e-beam evaporation method. Sealing process was performed in a vacuum at panel temperature of 430 $^{\circ}C$. We find the cracks on the MgO film surface, which results in higher discharge voltage and lower luminous efficiency. The vacuum in-line sealing technology does not require additional annealing process but induces the MgO cracks because of the high temperature sealing cycle in a vacuum. Therefore we modify the vacuum in-line sealing cycle which the MgO cracks are not found and the good characteristics of plasma displays are found in higher sealing pressure at sealing temperature of 430 $^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.55 no.6
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• pp.314-324
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• 2006

In recent years, having the advantages of being small, low in cost and high in efficiency, Half-wave resonant type, (having only one output diode), is used in ZVS Half-Bridge DC/DC converter. This paper presents the operation mode by multi-resonant factors in the Half-wave type multi-resonant converter with direct Buck chopper circuit operated in discontinuous current mode. To study the characteristics of a multi-resonant operation in steady-state, the characteristic impedances in each mode and safe operation-region(S.O.R) are reported. Computer simulation and experimental data are also riven to verify the theoretical results.