Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Characteristics of Al Thin Films on Ar Plasma Surface Treatment

Al 박막의 Ar 플라즈마 표면처리에 따른 특성

  • Park, Sung-Hyun (Depart. of Electric & Electronics Engineering in Kyungwon Univ.) ;
  • Ji, Seung-Han (Depart. of Electric & Electronics Engineering in Kyungwon Univ.) ;
  • Jeon, Seok-Hwan (Depart. of Electric & Electronics Engineering in Kyungwon Univ.) ;
  • Chu, Soon-Nam (Depart. of Electric & Electronics Engineering in Kyungwon Univ.) ;
  • Lee, Sang-Hoon (Depart. of Electric & Electronics Engineering in Kyungwon Univ.) ;
  • Lee, Neung-Hun (Depart. of Electric & Electronics Engineering in Kyungwon Univ.)
  • 박성현 (경원대학교 전기전자공학과) ;
  • 지승한 (경원대학교 전기전자공학과) ;
  • 전석환 (경원대학교 전기전자공학과) ;
  • 추순남 (경원대학교 전기전자공학과) ;
  • 이상훈 (경원대학교 전기전자공학과) ;
  • 이능헌 (경원대학교 전기전자공학과)
  • Published : 2007.07.18
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Abstract

Al thin film was the most popular electrode in semiconductor and flat panel display world, because of its electrical conductivity, selectivity and easy to apply to thin film. However, Al thin films were not good to use on the bottom electrode about the crystalline growth of inorganic compound materials such as ZnO, AlN and GaN, because of its surface roughness and melting points. In this paper, we investigated Ar plasma surface treatment of Al thin film to enhance the surface roughness and electrical conductivity using the reactive ion etching system. Several process conditions such as RF power, working pressure and process time were controlled. In results, the surface roughness showed $15.53\;{\AA}$ when RF power was 100 W, working pressure was 50 mTorr and process time was 10 min. Also, we tried to deposit ZnO thin films on the each Al thin films, the upper conditions showed the best crystalline characteristics by x-ray diffraction.

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