• 전기의세계
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• v.25 no.5
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• pp.79-87
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• 1976

This paper is to investigate the A.C generation of MHD engine, converting directly the kinetic energy of conductive gas in high temperature to electric power by the effect of magnetic field. It is known that there are at least two kinds of method in A.C MHD power generation; one, by sending stationary plasma flow in an alternating or rotating magnetic field and the other, by transmission of pulse type plasma flow in uniform and constant magnetic field, former method is adopted here. In order to raise the total efficiency of close cycle in combination with nuclear power and MHD genertaion, an argon plasma jet is utilized as heat source, which is not mixed with the seed material, and the design data are obtained for A.C MHD generation in small capacity, but induced voltage and power output have the maximum values, 15 voltages and 7.5W respectively due to plasma flow with low conductivity and weak magnetic field.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.933-937
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• 2007

A point plate type nonthermal plasma reactor, with a grounded cylindrical third electrode which closely- encompasses the needle point, have been investigated with an emphasis on the role of the third electrode. It was found that the point plate airgap, with the grounded third electrode, had a switching characteristic on its I V characteristics for negative and positive discharges, which is very different from that of a conventional point plate airgap without a third electrode. The corona discharge and ozone generation characteristics of the plasma reactor with the grounded cylindrical third electrode, such as the corona onset voltage. the breakdown voltage. the corona current. and the amount of output ozone, were influenced significantly by the height of the third electrode. and these characteristics can be controlled by adjusting the height of the third electrode.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2092-2094
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• 2000

As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by improving current optical lithography technology. In order to set EUV radiation which can be applied to EUVL, it is essential to generate very high density and high temperature plasma stably. The method using a pulse power laser and a high voltage pulse discharge is commonly used to accomplish such a high density and high temperature plasma. In this paper we review the recent trends of the EUV generation technique by high density and high temperature plasma.

• Applied Chemistry for Engineering
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• v.34 no.5
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• pp.507-514
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• 2023

The selective catalytic reduction (SCR) of nitrogen oxides (NO_x) was investigated in a catalyst (Ag/γ-Al₂O₃) packed dielectric barrier discharge plasma reactor. The intermittent generation of plasma in the catalyst bed partially oxidized the hydrocarbon reductant for NO_x removal to several aldehydes. Compared to using the catalyst alone, higher NO_x conversion was observed with the intermittent generation of plasma due to the formation of highly reductive aldehydes. Under the same operating conditions (temperature: 250 ℃; C/N: 8), the NO_x reduction efficiencies were 47.5%, 92%, and 96% for n-heptane, propionaldehyde, and butyraldehyde, respectively, demonstrating the high NO_x reduction capability of aldehydes. To determine the optimal condition for intermittent plasma generation, the high voltage on/off cycle was adjusted from 0.5 to 3 min. The NO_x reduction performance was compared between continuous and intermittent plasma generation on the same energy density basis. The highest NO_x reduction efficiency was achieved at 2-min high voltage on/off intervals. The reason that the intermittent plasma discharge exhibited higher NO_x reduction efficiency even at the same energy density, compared to the continuous plasma generation case, is that the intermediate products, such as aldehydes generated from hydrocarbon, were more efficiently utilized for the reduction of nitrogen oxides.

• Proceedings of the Korean Society of Food Hygiene and Safety Conference
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• 2002.05a
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• pp.138-138
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• 2002

Oxidative stress has been associated with a number of diseases in human. Among the sources that can generate oxidative stress, it has been reported that iron can generate reactive oxygen species (ROS)with thiol. In iron overload state, increased thiol levels in plasma appeared to be associated with human mortality. In this study we examined whether iron could interact with thiols in plasma, generating ROS. In human plasma, unlike with Fe(III), Fe(II) increased lucigenin-enhanced chemiluminescence in concentration-dependent manner, and this was inhibited by SOD. Boiling of plasma did not affect chemiluminescence induced by Fe(II). Hovever, thiol depletion in plasma by pretreatment with N-ethylmaleimide (NEM)decreased Fe(II)-induced chemiluminescence significantly, suggesting that Fe(II) generated superoxide anion by the nonenzymatic reaction with plasma thiol. Consistent with this findings, albumin, the major thiol contributor in plasma, also generated ROS with Fe(II) and this generation was inhibited by pretreatment with NEM. Treatment with Fe(II) to plasma resulted un significant reduction of oxygen radical absorbance capacity (ORAC) value, suggest that total antioxidant capacity could diminished in iron overload state. In conclusion, In iron overload state, plasma may be affected by oxidative stress mediated by nonenzymatic reaction of Fe (II)with plasma thiol.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.367-377
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• 2001

Plasma is generated by electrical discharge. Most plasma generation has been carried out at low-pressure gas typically less than one millionth of atmospheric pressure. Plasmas are in general generated from impact ionization of neutral gas molecules by accelerated electrons. The energy gain of electrons accelerated in an electrical field is proportional to the mean free path. Electrons gain more energy at low-pressure gas and generate plasma easily by ionization of neutrals, because the mean free path is longer. For this reason conventional plasma generation is carried out at low pressures. However, many practical applications require plasmas at high-pressure. In order to avoid the requirement for vacuum pumps, researchers in Korea start to develop plasmas in high-pressure chambers where the pressure is 1 atmosphere or greater. Material processing, environmental protection/restoration and improved energy production efficiency using plasmas are only possible for inexpensive bulk plasmas. We thus generate plasmas by new methods and plan to set foundations for new plasma technologies for $21^{st}$ / century industries. This technological research will play a central role in material processing, environmental and energy production industries.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.773-776
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• 2007

A microstructure array has been proposed for micro plasma generation using electroplating and double exposed process. A stable atmospheric plasma has been generated at a low voltage by utilizing the micro electrode gap. Self-aligned microstructure can provide uniform electrode overlap with precisely controlled gap between the electrodes. The proposed structure allows for triode operation, which can expand the generated plasma over a large area by applying a lateral electric field. Electrical characteristics of the micro triode confirm the large numbers of the plasma ions are drifted to the secondary cathode by the lateral electrical field.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.169-178
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• 2014

Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + $CF_4$ ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and $F_2$ radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.413-416
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• 2002

It was reported that low temperature plasma developed by our group was apparently homogeneous and stable at atmospheric pressure, and was generated if the alumina was used as a dielectric insulating material and Ar gas as a plasma gas. This is a structure in which the dielectric materials are covered and arranged in parallel in the one side of electrode. In this experiment, we discovered that dielectric material was important to generate normal electric discharge. To examine the effect of dielectric material on the electric discharge characteristic, the voltage and current of the plasma was measured and the electrical effect of dielectric material was examined. Also, it was applied to an etching of tin oxide films.

• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.483-488
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• 2006

Etching process of PMMA (Polymethyl Methacrylate) on glass surface was investigated by dry etching technique using remote plasma. To determine the etching characteristics, the remote plasma etching was conducted for various process parameters such as plasma power, reaction gas and distance from plasma generation. As the distance from the plasma generation was increased, the etch rate of PMMA was linearly decreased by radical density in plasma. PMMA has removed by reactive radicals in the plasma. The etch rate increased with plasma power because of more reactive radicals. The etch rate and surface roughness of PMMA increased with $O_2$ concentration in the etchant.