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Influence of Loading Position and Reaction Gas on Etching Characteristics of PMMA in a Remote Plasma System  

Ko, Cheonkwang (Department of Chemical Engineering, Kangwon National University)
Lee, Wongyu (Department of Chemical Engineering, Kangwon National University)
Publication Information
Korean Chemical Engineering Research / v.44, no.5, 2006 , pp. 483-488 More about this Journal
Abstract
Etching process of PMMA (Polymethyl Methacrylate) on glass surface was investigated by dry etching technique using remote plasma. To determine the etching characteristics, the remote plasma etching was conducted for various process parameters such as plasma power, reaction gas and distance from plasma generation. As the distance from the plasma generation was increased, the etch rate of PMMA was linearly decreased by radical density in plasma. PMMA has removed by reactive radicals in the plasma. The etch rate increased with plasma power because of more reactive radicals. The etch rate and surface roughness of PMMA increased with $O_2$ concentration in the etchant.
Keywords
Remote Plasma; PMMA; Etch Rate; Loading Position;
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Times Cited By KSCI : 1  (Citation Analysis)
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