• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.210-213
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• 2002

The blue phosphor, $BaMgAl_{10}O_{17}$:$Eu^{2+}$, showing a blue emission band at about 450 nm were prepared by solid state reaction of BaC $O_3$, A $l_2$ $O_3$, MgO and E $u_2$ $O_3$ with Al $F_3$ as a flux. The thermal quenching of BaMgAl $O_{17}$:E $u^{2+}$ phosphor significantly reduces the intensity of the blue emission. It is reduced by an amount of 50% after heating at around 800$^{\circ}C$ for 1 hr. The red emission in the 580∼720 nm region of $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_1$ and $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_2$ transition of $Eu^{3+}$ is produced from the phosphor heated above 1,100$^{\circ}C$. The EPR spectrum also reveals that some part of E $u^{2+}$ ions are oxidized to trivalent ions above 1,100$^{\circ}C$ at around 90 and 140mT. This oxidation evidence is also detected from XANES absorption spectra for $L_{III}$ shell of Eu ions: an absorption peak is at 6,977eV of E $u^{2+}$ and 6,984eV of $Eu^{3+}$. The combined X-ray and neutron data suggests that the new phase of EuMgA $l_{11}$ $O_{19}$ magnetoplumbite structure may be formed by heat treatment.eat treatment.tment.eat treatment.tment.t.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.553-559
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• 2003

PDP rib is one of the important parts of manufacturing process and the sintering degree of rib plays an important role to prevent some problems such as cross talk. Nowadays, the screen-printing method, which is a low price and high production, is used to make a rib. However, it is hard to judge and value the sintering ratio of sintered body itself. In this study, we measured the sintering degree by the dielectric breakdown of pores with the potentiostat. We conformed that this has similar tendency to density of sintered samples and an error being expected by open and closed pores was inspected by change of the microstructure to scanning electron microscope. This result showed that the sintering degree of PDP rib could be analyzed into the electro-chemical method.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.637-643
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• 2003

In order to improve the photoluminescent properties and crystallinity, Zn$_2$SiO$_4$:Mn, M(M=Cr, Ti) phosphors were synthesized by the sol-gel method. The willemite single phase was obtained at 110$0^{\circ}C$, which is lower temperature than that of the conventional solid-state reaction (130$0^{\circ}C$). The characteristics of fired samples were obtained by a 147 nm excitation source under VUV (Vacuum Ultraviolet). To investigation the effect of co-dopant, the content of Mn and the ratio of $H_2O$ to TEOS was fixed as 2 ㏖% and 36. 1, respectively. The highest emission intensity was obtained when the concentration of Cr and Ti was 0.1 ㏖% relative to Zn$_2$SiO$_4$:Mn. While the emission intensity decrease continuously the decay time improved as increased the Cr concentration. In the case of Ti added samples, however, the emission intensity increase up to 2 ㏖％ concentration.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.6
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• pp.39-47
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• 2003

This paper proposes the new narrow erase method to erase wall charges formed in an AC plasma display panel (PDP) cell. In the Proposed method, sustain switching timing is adjusted for inducing a weak discharge. Then, after the narrow erase, tile voltage of the X electrode is set to differ from that of the Y electrode. For the proposed method, the measured maximum address voltage margin was 38.3V at Y_Reset voltage of 100V and sustain voltage of 180∼185V. However, for the prior method, in which the X and Y electrodes we set to be of equal voltage after the narrow erase, the measured maximum address voltage margin was 31.3V at Y_Reset voltage of 150V and sustain voltage of 180V. This result shows that the measured maximum voltage margin for the proposed method is greater than that for the prior method by ∼7V(22%).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.70-74
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• 1999

MgO-CaO protective layers with various composition were prepared by electron beam evaporation to improve the characteristics of conventional pure MgO thin films as a protective layer for AC-PDP. The maximum deposition rate of pure MgO was 1025 $\AA$/min and decreased with increasing [(CaO/(MgO+CaO)] ratio of evaporation starting materials. From XRD analyses, a trend of peak shift to the lower 2$\theta$ angle side was shown as CaO content increased and it stoped when the concentration of CaO was 0.13, which corresponds to the maximum solubility of CaO in MgO. The optimum composition of the protective thin films was Mg 47.1 at%, Ca 1.3 at%, O 51.6 at%, and firing voltage, memory margin and deposition rate of the film with this composition was 176 V, 0.5 and 515 $\AA$/min, respectively.

• Journal of KIEE
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• v.11 no.1
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• pp.41-45
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• 2001

The addressing time should be reduced by modifying cell structure and/or driving method in order to replace the dual scan system by single scan and increase the luminance in large ac plasma display panel(PDP). In this paper, the effects of the dielectric layer thickness and the barrier rib height on the addressing time of ac PDP are investigated. It is found out that the addressing time was decreased with decreasing thickness of dielectric layer on the front glass and thickness of white dielectric layer on the rear glass. The decreasing rate were 160ns/10${\mu}{\textrm}{m}$ and 270nsd/10${\mu}{\textrm}{m}$, respectively. Also in case of decreasing the height of barrier rib, addressing time was decreased at the rate of 550ns/10${\mu}m$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.8
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• pp.13-18
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• 2005

The variation of discharge characteristics of an ac PDP was observed with the charge of scan electrode driving circuit. Conventional scan electrode driving circuit provides two switches per one scan line, and the suggested one can be constituted by one switch per one scan line with the consideration of capacitive load characteristic of an ac PDP. To verify the workability of the suggested scheme, the performances of the ac PDP was investigated. The dynamic voltage margin was slightly decreased with the adoption of the suggested scheme, which is estimated to result from the misfiring of unselected discharge cells due to the deformation of voltage level of the neighboring scan electrode. In the observation of the delay characteristics of addressing discharge, the performances of the conventional circuit and the suggested one are assumed to be equivalent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.506-511
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• 2009

For the application of the photosensitive barrier ribs with optimal properties such as glass transition temperature, refractive index and coefficient thermal expansion, the boro-silicate glasses was studied. The glass transition temperature, coefficient thermal expansion, and refractive index of the glasses based on the $B_2O_3-Al_2O_3-Al_2O_3-SiO_2$ glass system have been investigated with the different ratio of BaO/$Na_2O$ and $B_2O_3/Na_2O$. Increasing the ratio of $B_2O_3/Na_2O$ was led to the increase of coefficient thermal expansion and the decrease of glass transition temperature. The increase of refractive index of boro-silicate glasses increased with the density of glasses. We suggest the empirical equation for the prediction of refractive index with the glass density, $n=0.123{\rho}+1.182$ with 0.042 as the standard deviation in the boro-silicate glass system. The aim of the present paper is to give a basic result of the thermal and optical properties for designing the composition of photosensitive barrier ribs in PDP.